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971.
972.
Tsuji M. Shigesawa H. Frezza F. Lampariello P. Oliner A.A. 《Antennas and Propagation, IEEE Transactions on》1998,46(7):1047-1055
For pt.II ibid., vol.46, no.7, p.1042-46. The article describes the measurements that verify the validity of the theoretical expressions for this new type of antenna. Measurements were made both at millimeter wavelengths (40 to 60 GHz) and in the X-band (8 to 12 GHz) frequency range and of two different quantities: the propagation wavenumbers β and α and radiation patterns. Comparisons were made with numerical values obtained from the theoretical expressions derived in parts I and II and very good agreement was found in all cases 相似文献
973.
Hebb J.P. Jensen K.F. Thomas J. 《Semiconductor Manufacturing, IEEE Transactions on》1998,11(4):607-614
The radiative properties of patterned silicon wafers have a major impact on the two critical issues in rapid thermal processing (RTP), namely wafer temperature uniformity and wafer temperature measurement. The surface topography variation of the die area caused by patterning and the roughness of the wafer backside can have a significant effect on the radiative properties, but these effects are not well characterized. We report measurements of room temperature reflectance of a memory die, logic die, and various multilayered wafer backsides. The surface roughness of the die areas and wafer backsides is characterized using atomic force microscopy (AFM). These data are subsequently used to assess the effectiveness of thin film optics in providing approximations for the radiative properties of patterned wafers for RTP applications 相似文献
974.
Rahul Sarpeshkar Richard F. Lyon Carver Mead 《Analog Integrated Circuits and Signal Processing》1998,16(3):245-274
Low-power wide-dynamic-range systems are extremely hard to build. The biological cochlea is one of the most awesome examples of such a system: It can sense sounds over 12 orders of magnitude in intensity, with an estimated power dissipation of only a few tens of microwatts. In this paper, we describe an analog electronic cochlea that processes sounds over 6 orders of magnitude in intensity, and that dissipates 0.5 mW. This 117-stage, 100 Hz to 10 KHz cochlea has the widest dynamic range of any artificial cochlea built to date. The wide dynamic range is attained through the use of a wide-linear-range transconductance amplifier, of a low-noise filter topology, of dynamic gain control (AGC) at each cochlear stage, and of an architecture that we refer to as overlapping cochlear cascades. The operation of the cochlea is made robust through the use of automatic offset-compensation circuitry. A BiCMOS circuit approach helps us to attain nearly scale-invariant behavior and good matching at all frequencies. The synthesis and analysis of our artificial cochlea yields insight into why the human cochlea uses an active traveling-wave mechanism to sense sounds, instead of using bandpass filters. The low power, wide dynamic range, and biological realism make our cochlea well suited as a front end for cochlear implants. 相似文献
975.
976.
F. Pasquarelli 《Journal of scientific computing》1995,10(3):289-304
The multidomain technique for elliptic problems, that allows the fulfillment of the interface conditions by means of a suitable combination of the continuity of the solution and of its normal derivative, is considered. Some choices of this combination are investigated and, in particular, a choice that allows the solution of the multidomain problem through two solutions for each subproblem, is proposed. The scheme has been discretized with a collocation method and some numerical tests are reported. Moreover the method is compared with the more classical Dirichlet/Neumann one as well as with the capacitance matrix method.This research has been supported by a grant from M.P.I. (40%). 相似文献
977.
Guan L. Christou A. Halkias G. Barbe D.F. 《Electron Devices, IEEE Transactions on》1995,42(4):612-617
A model for the calculation of the current-voltage characteristics of strained In0.52Al0.48As/InxGa1-xAs on InP substrate High Electron Mobility Transistors (HEMT's), based on a variational charge control model, is presented. A polynomial fit of the two-dimensional electron gas (2DEG) density is used for the calculation of the current-voltage characteristics. The effect of strain is introduced into the 2DEG density versus gate voltage relation. Very good agreement between the calculated and measured I-V characteristics was obtained. In addition, our results show that, for an indium mole fraction of the InxGa1-xAs channel in the range 0.53-0.60, increasing the indium mole fraction lowers the threshold voltage and hence increases the drain current at the same gate bias 相似文献
978.
V. N. Polupanov N. F. Dakhov V. K. Kiselyev V. N. Seleznev 《Journal of Infrared, Millimeter and Terahertz Waves》1995,16(6):1167-1172
Antiferromagnetic resonance (AFMR) in iron borate at the frequency of 300 GHz at the room temperature in weak (down to 0.1T) external magnetic fieldH has been studied. The loss in AFMR line increased or decreased depending on the direction and magnitude ofH. Such properties ofFeBO 3 monocrystals allows to design undirectional and modulation devices. 相似文献
979.
Tramadol hydrochloride is a centrally acting synthetic analgesic in widespread clinical use. Despite different degrees of opioid-like characteristics in preclinical tests, it is characterized by lack of full naloxone reversibility or naloxone-precipitated withdrawal in humans. To investigate this apparent discrepancy, the present study measured the affinity of tramadol (and its enantiomers) and an active O-desmethyl metabolite (M1) (and its enantiomers) to cloned human opioid receptors of the mu, delta and kappa type stably expressed in HN9.10 neuroblastoma cells. At mu sites, the Ki values for tramadol, its (+) and (-) enantiomers, M1, and its (+) and (-) enantiomers were 17000, 15700, 28800, 3190, 153 and 9680 nM, respectively, compared to 7.1 nM for morphine. These results are consistent with the suggestion of a non-opioid contribution to the clinical profile of tramadol. 相似文献
980.