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21.
Yu. V. Baldokhin V. V. Vavilova P. Ya. Kolotyrkin Yu. K. Kovneristyi N. A. Palii A. S. Solomatin 《Inorganic Materials》2003,39(6):562-567
Mössbauer effect measurements and physicochemical analysis demonstrate that annealing of amorphous Fe–P–Mn alloys leads to the formation of a nanocrystalline structure. 相似文献
22.
N. P. Mandal S. C. Agarwal 《Journal of Materials Science: Materials in Electronics》2003,14(10-12):797-798
Exposure to ammonia (NH3) increases the dark current (DC) in nanocrystalline silicon. Light soaking (LS) for short periods also enhances the dark current, which remains at a high value for a long time. Pumping alone is unable to restore the initial annealed state, but annealing brings it back. The final state obtained by LS and NH3 exposure depends on the order in which they are performed. Evaporated selenium (Se) deposited on nanocrystalline silicon decreases the DC. These effects cannot be explained entirely by the presence of a-Si : H alone, in our sample. DC and photoluminescence (PL) measurements indicate the presence of two types of center in our sample, which behave differently when exposed to NH3. 相似文献
23.
A method of measuring and identifying the static parameters of a bipolar transistor is considered. The characteristic of the transistor, from which the parameters of the model are determined, is chosen depending on what group the calculated parameters belong to. The characteristics are measured in such a way that the equations of the model describing them can be reduced to the simplest form. 相似文献
24.
M. N. Levin A. V. Tatarintsev V. A. Makarenko V. R. Gitlin 《Russian Microelectronics》2006,35(5):329-336
A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated. 相似文献
25.
R. Murgan F. Razak D. R. Tilley T. Y. Tan J. Osman M. N. A. Halif 《Computational Materials Science》2004,30(3-4):468-473
We derive an expression for transmittivity (TSHG) of second harmonic generation (SHG) signals from a ferroelectric (FE) film. Intensities of up and down fields in the medium are investigated in relation to TSHG. The derivations are made based on undepletion of input fields and nonlinear wave equation derived from the Maxwell equations. We present two cases: film without mirrors and with partial mirrors. Expressions for the newly derived nonlinear susceptibility coefficients of SHG for real crystal symmetry [J. Opt. Soc. Am. B 19 (2002) 2007] are used to get more realistic results. Variations in TSHG with respect to film thickness are illustrated. 相似文献
26.
The electrical properties and microstructure of (Ba,Y)TiO3 PTCR ceramics were studied. The results indicate that the Mn ions increase the intergranular barrier height and produce a high-resistance layer on the grain surface. The temperature-dependent resistances of the grain bulk, surface layer, and grain boundaries, the temperature coefficient of resistance, and the magnitude of the varistor effect were assessed as a function of Mn content. 相似文献
27.
28.
The microstructure evolution in nonstoichiometric titanium carbide is studied during high-temperature deformation at high strain rates and low strains (shock compression) and at slow strain rates and high strains (superplastic regime). The results demonstrate that high-temperature deformation in a broad range of strain rates offers a means of controlling the microstructure of titanium carbide. By varying deformation conditions, one can obtain materials differing in microstructure and chemical composition, in particular, with equilibrium and nonequilibrium microstructures. Accordingly, the physicochemical properties of such materials also differ. 相似文献
29.
We consider the problem of designing a network of optical cross-connects (OXCs) to provide end-to-end lightpath services to large numbers of label switched routers (LSRs). We present a set of heuristic algorithms to address the combined problem of physical topology design (i.e., determine the number of OXCs required and the fiber links among them) and logical topology design (i.e., determine the routing and wavelength assignment for the lightpaths among the LSRs). Unlike previous studies which were limited to small topologies with a handful of nodes and a few tens of lightpaths, we have applied our algorithms to networks with hundreds or thousands of LSRs and with a number of lightpaths that is an order of magnitude larger than the number of LSRs. In order to characterize the performance of our algorithms, we have developed lower bounds which can be computed efficiently. We present numerical results for up to 1000 LSRs and for a wide range of system parameters such as the number of wavelengths per fiber, the number of transceivers per LSR, and the number of ports per OXC. The results indicate that it is possible to build large-scale optical networks with rich connectivity in a cost-effective manner, using relatively few but properly dimensioned OXCs. 相似文献
30.
K. N. Subramanian J. G. Lee 《Journal of Materials Science: Materials in Electronics》2004,15(4):235-240
Properties of body centered tetragonal tin are highly anisotropic. As a consequence large stresses can develop at the tin grain boundaries due to coefficient of thermal expansion mismatch during temperature excursions. A modeling approach to evaluate the 3D stress states that develop at grain boundaries during thermomechanical fatigue in tin-based solder is presented. Development of significant amounts of stresses in the plane of the grain boundary can cause grain-boundary sliding and surface-relief effects, while those normal to the grain boundary can cause grain-boundary decohesion and cracking. 相似文献