Hydrothermal corrosion of magnesiapartially-stabilized zirconia

Changes in the phase compositions and microstructures of magnesia-partially-stabilized zirconia (Mg-PSZ) were studied in water at 80–300 °C, 1 m HCl solutions at 80–140 °C and 1 m CH₃COOH-CH₃COONa buffer solutions at pH 3 and 80–140 °C for 10–40 days. The tetragonal to monoclinic phase transformation and the degradation of the fracture strength occurred in water above 200 °C. On the other hand, although no noticeable tetragonal to monoclinic phase transformation proceeded in 1 m HCl solutions and 1 m CH₃COOH-CH₃-COONa buffer solutions at pH 3 below 140 °C, the fracture strength of Mg-PSZ greatly degraded. The dissolution of Mg²⁺ ion was observed in water above 200 °C and in 1 m HCl solutions above 80 °C.     

Effect of surface treatment on segregation of impurities in haematite

Surface segregation of various impurities such as Mg, Si, Ca, Al and Cr were determined for the haematite phase (Fe₂O₃) annealed in two different gas compositions involving (1) air at 1173 K, and (2) a gas mixture containing sulphur at 773 K. The objective of work was to establish the effect of the gas-phase composition on segregation of lattice defects. The near-surface segregation profiles of the impurities were determined by secondary ion mass spectrometry. The depth profile analysis was made by sputtering using an Ar⁺ primary beam of energy 30 keV. The surface charge was neutralized by an electron gun. It was found that annealing Fe₂O₃ under a gas phase containing sulphur resulted in the formation of an Fe(SO₄)₃ surface layer. It was observed that the two surface treatment procedures applied (both with and without sulphur) result in Mg enrichment in the near-surface region of Fe₂O₃. Si and Ca exhibit an enrichment and impoverishment after the surface treatments 1 and 2, respectively. Finally, the near-surface layer is impoverished in Cr and Al after both types of surface treatment. Experimental results are discussed in terms of segregation driving forces of the respective elements and the possible effect of sulphur on the gas-solid heterogeneous kinetics.     

Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology

This paper presents results of reliability investigation of 20 V N-Drift MOS transistor in 0.13 μm CMOS technology. Due to high performances required for CMOS applications, adding high voltage devices becomes a big challenge to guarantee the reliability criteria. In this context, new reliability approaches are needed. Safe Operating Area are defined for switch, V_ds limited and V_gs limited applications in order to improve circuit designs. For V_ds limited applications, deep doping dose effects in drift area are investigated in correlation to lifetime evaluations based on device parameter shifts under hot carrier stressing. To further determine the amount and locations of hot carriers injections, accurate 2D technological and electrical simulations are performed and permit to select the best compromise between performance and reliability for N-Drift MOS transistor.     

Fabrication of Strain-Relaxed Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript>/Si(001) Buffer Layers of Low Surface Roughness

The results are presented of the fabrication of strain-relaxed graded Si_{1 − x} Ge_x/Si(001) buffer layers with a maximum Ge fraction of about 0.25 that have a low density of threading dislocations (<10⁶ cm⁻²) and low surface roughness. The buffer layers are grown by atmospheric-pressure hydride CVD. It is found that chemical mechanical polishing can reduce their surface roughness to a level comparable with that of the original Si(001) substrates. It is shown that the polished buffer layers can serve as substrates for MBE-grown SiGe/Si heterostructures.__________Translated from Mikroelektronika, Vol. 34, No. 4, 2005, pp. 243–250.Original Russian Text Copyright © 2005 by Vostokov, Drozdov, Krasil’nik, Kuznetsov, Novikov, Perevoshchikov, Shaleev.     

Improved design of VSS controller for a linear belt-driven servomechanism

This paper proposes a new control algorithm for a linear belt-driven servomechanism. The elasticity of the belt and large nonlinear friction along with large variation of parameters limit the applicability of the belt driven servosystems. Design of simple control that can guarantee stable, vibration-free operation for large variation of load is needed to extend application of such a linear stage. The proposed control is based on the application of sliding mode methods combined with Lyapunov design so it guarantees the stability of the system. Due to the restriction of the system motion to specially selected sliding mode manifold the vibration free position tracking is achieved with very good disturbance rejection. Proposed algorithm is simple and practical for an implementation and the tuning procedure of the control parameters is simple. The experiments have shown that the proposed control scheme effectively suppresses vibrations and assures wide closed-loop bandwidth for position tracking control.     

Results of testing a centrifugal bubble singlet-oxygen generator

The results of parametric tests of a centrifugal bubble singlet-oxygen generator based on the reaction of chlorine with an alkaline hydrogen peroxide solution have been given. The utilization of chlorine grows with bubble-layer height, whereas the relative content of O₂(¹Δ) remains constant. Growth in centrifugal acceleration leads to a more efficient utilization of chlorine. A specific oxygen output of more than 1 mmole·cm⁻²·sec⁻¹ from the bubble layer for a degree of chlorine utilization of ∼95% and a singlet-oxygen yield of more than 50% has been attained. It has been shown that a centrifugal bubble singlet-oxygen generator is an efficient energy source for an oxygen-iodine laser. __________ Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 80, No. 3, pp. 121–128, May–June, 2007.     

Fast numerically stable computation of orthogonal Fourier?Mellin moments

An efficient algorithm for the computation of the orthogonal Fourier-Mellin moments (OFMMs) is presented. The proposed method computes the fractional parts of the orthogonal polynomials, which consist of fractional terms, recursively, by eliminating the number of factorial calculations. The recursive computation of the fractional terms makes the overall computation of the OFMMs a very fast procedure in comparison with the conventional direct method. Actually, the computational complexity of the proposed method is linear O(p) in multiplications, with p being the moment order, while the corresponding complexity of the direct method is O(p²). Moreover, this recursive algorithm has better numerical behaviour, as it arrives at an overflow situation much later than the original one and does not introduce any finite precision errors. These are the two major advantages of the algorithm introduced in the current work, establishing the computation of the OFMMs to a very high order as a quite easy and achievable task. Appropriate simulations on images of different sizes justify the superiority of the proposed algorithm over the conventional algorithm currently used