Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals

The results of the effect of ultrasonic treatment of ZnSe crystals on the structure of the energy spectrum of electronic states of centers with deep levels forming photoelectric and luminescent properties of this compound are presented. It is for the first time proved experimentally that the climb of edge dislocations under the effect of ultrasound leads to regrouping and generation of defects forming deep levels, which manifest themselves in phenomena of photosensitivity and radiative recombination.     

Recrystallization of phenylbutazone using supercritical fluid antisolvent process

Phenylbutazone was recrystallized from its solutions by using a supercritical fluid antisolvent process. It was dissolved in acetone and supercritical carbon dioxide was injected into the solution, thereby inducing supersaturation and particle formation. Variation in the physical properties of the recrystallized phenylbutazone was investigated as a function of the crystallizing temperature and the carbon dioxide injection rate. The recrystallized particles showed cleaner surfaces and more ordered morphology compared to the particles obtained by other methods such as solvent evaporation. X-ray diffraction patterns indicated that the crystallinity of the particles had been modified upon the recrystallization. Differential scanning calorimetry measurement revealed that the crystallizing temperature influenced the thermal stability of the resulting crystals. Larger crystals were produced when the carbon dioxide injection rate was reduced.     

Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.     

A Tutorial on GrÖbner Bases With Applications in Signals and Systems

This paper is a tutorial on GrÖbner bases and a survey on the applications of GrÖbner bases in the broad field of signals and systems. A reasonably detailed review is given of several fundamental theoretical issues that occur in the use of GrÖbner bases in multidimensional signals and systems applications. These topics include the primeness of multivariate polynomial matrices, multivariate unimodular polynomial matrix completion, and prime factorization of multivariate polynomial matrices. A brief review is also presented on the wide-ranging applications of GrÖbner bases in multidimensional as well as one-dimensional circuits, networks, control, coding, signals, and systems and other related areas like robotics and applied mechanics. The impact and scope of GrÖbner bases in signals and systems are highlighted with respect to what has already been accomplished as a stepping stone to expanding future research.      

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Photochemical reduction of molecular weight and number of double bonds in natural rubber film

Natural rubber (NR) can be degraded depending on various factors such as heat, mechanical force, chemical reaction, and light. Light is a very interesting factor because it can cause the NR to degrade under low temperature and pressure. The photo-degradation of NR films was carried out to investigate the effects of the light and the temperature on the reduction of the weight-average molecular weight (Mw) and the double bonds in the NR films. The NR films, with and without catalysts, titanium dioxide (TiO₂), and potassium persulfate (K₂S₂O₈), were exposed to light from a mercury light bulb at 7,000 and 36,000 lux, and at the temperature of 25 °C and 80 °C for 192 hrs. After exposure, the Mw of the NR films was analyzed by gel permeation chromatography (GPC). Changes in the Mw were used to construct a kinetic model for the process, (1/Mw)=(1/Mw₀)+(kt/2M₀) where k is the rate constant, and M₀ is the Mw of the monomer unit. The linear relationship between 1/Mw and time suggested pseudo first-order processes with random scission. The Mw distribution information from the GPC was used to calculate the number of double bonds in the NR films. The trend of the double bonds reduction curves was quite similar to the result obtained from the calculation from the FTIR spectra. This indicated that this calculation method might possibly be another alternative way to obtain the number of double bonds in the NR.     

Self-adjusting the intensity of assortative mating in genetic algorithms

Mate selection plays a crucial role in both natural and artificial systems. While traditional Evolutionary Algorithms (EA) usually engage in random mating strategies, that is, mating chance is independent of genotypic or phenotypic distance between individuals, in natural systems non-random mating is common, which means that somehow this mechanism has been favored during the evolutionary process. In non-random mating, the individuals mate according to their parenthood or likeness. Previous studies indicate that negative assortative mating (AM)—also known as dissortative mating—, which is a specific type of non-random mating, may improve EAs performance by maintaining the genetic diversity of the population at a higher level during the search process. In this paper we present the Variable Dissortative Mating Genetic Algorithm (VDMGA). The algorithm holds a mechanism that varies the GA’s mating restrictions during the run by means of simple rule based on the number of chromosomes created in each generation and indirectly influenced by the genetic diversity of the population. We compare VDMGA not only with traditional Genetic Algorithms (GA) but also with two preceding non-random mating EAs: the CHC algorithm and the negative Assortative Mating Genetic Algorithm (nAMGA). We intend to study the effects of the different methods in the performance of GAs and verify the reliability of the proposed algorithm when facing an heterogeneous set of landscapes. In addition, we include the positive Assortative Mating Genetic Algorithm (pAMGA) in the experiments in order test both negative and positive AM mechanisms, and try to understand if and when negative AM (or DM) speeds up the search process or enables the GAs to escape local optima traps. For these purposes, an extensive set of optimization test problems was chosen to cover a variety of search landscapes with different characteristics. Our results confirm that negative AM is effective in leading EAs out of local optima traps, and show that the proposed VDMGA is at least as efficient as nAMGA when applied to the range of our problems, being more efficient in very hard functions were traditional GAs usually fail to escape local optima. Also, scalability tests have been made that show VDMGA ability to decrease optimal population size, thus reducing the amount of evaluations needed to attain global optima. We like to stress that only two parameters need to be hand-tuned in VDMGA, thus reducing the tuning effort present in traditional GAs and nAMGA.     

Analysis of the Datagram Congestion Control Protocol’s connection management procedures using the sweep-line method

State space explosion is a key problem in the analysis of finite state systems. The sweep-line method is a state exploration method which uses a notion of progress to allow states to be deleted from memory when they are no longer required. This reduces the peak number of states that need to be stored, while still exploring the full state space. The technique shows promise but has never achieved reductions greater than about a factor of 10 in the number of states stored in memory for industrially relevant examples. This paper discusses sweep-line analysis of the connection management procedures of a new Internet standard, the Datagram Congestion Control Protocol (DCCP). As the intuitive approaches to sweep-line analysis are not effective, we introduce new variables to track progress. This creates further state explosion. However, when used with the sweep-line, the peak number of states is reduced by over two orders of magnitude compared with the original. Importantly, this allows DCCP to be analysed for larger parameter values. Somsak Vanit-Anunchai was partially supported by an Australian Research Council Discovery Grant (DP0559927) and Suranaree University of Technology. Guy Edward Gallasch was supported by an Australian Research Council Discovery Grant (DP0559927).