Tailoring the Angular Mismatch in MoS2 Homobilayers through Deformation Fields

Ultrathin MoS₂ has shown remarkable characteristics at the atomic scale with an immutable disorder to weak external stimuli. Ion beam modification unlocks the potential to selectively tune the size, concentration, and morphology of defects produced at the site of impact in 2D materials. Combining experiments, first-principles calculations, atomistic simulations, and transfer learning, it is shown that irradiation-induced defects can induce a rotation-dependent moiré pattern in vertically stacked homobilayers of MoS₂ by deforming the atomically thin material and exciting surface acoustic waves (SAWs). Additionally, the direct correlation between stress and lattice disorder by probing the intrinsic defects and atomic environments are demonstrated. The method introduced in this paper sheds light on how engineering defects in the lattice can be used to tailor the angular mismatch in van der Waals (vdW) solids.     

RA-ECDM of Silicon Wafers Using Taguchi’s Methodology and Machine Learning Algorithms

Silicon - As a prominent machining process, electrochemical discharge machining (ECDM) is used to process materials that are both fragile and difficult to cut. The growing use of this method for...     

A Novel Approach to Investigate the Impact of Hetero-High-K Gate Stack on SiGe Junctionless Gate-All-Around (JL-GAA) MOSFET

Silicon - It is a well-known fact that the gate stacking is used to improve the electrostatic behavior of Si0.5Ge0.5 Junctionless Gate-All-Around (JL-GAA) MOSFETs. In gate stacking, the high-k...     

Impact of Temperature Variation on Analog,Hot-Carrier Injection and Linearity Parameters of Nanotube Junctionless Double-Gate-All-Around (NJL-DGAA) MOSFETs

Silicon - Silicon-based Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs has become a promising solution to high-speed ULSI chip design. However, the change in surrounding...