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31.
Ostrikov KK  Seo DH  Mehdipour H  Cheng Q  Kumar S 《Nanoscale》2012,4(5):1497-1508
Three case studies are presented to show low-temperature plasma-specific effects in the solution of (i) effective control of nucleation and growth; (ii) environmental friendliness; and (iii) energy efficiency critical issues in semiconducting nanowire growth. The first case (related to (i) and (iii)) shows that in catalytic growth of Si nanowires, plasma-specific effects lead to a substantial increase in growth rates, decrease of the minimum nanowire thickness, and much faster nanowire nucleation at the same growth temperatures. For nucleation and growth of nanowires of the same thickness, much lower temperatures are required. In the second example (related to (ii)), we produce Si nanowire networks with controllable nanowire thickness, length, and area density without any catalyst or external supply of Si building material. This case is an environmentally-friendly alternative to the commonly used Si microfabrication based on a highly-toxic silane precursor gas. The third example is related to (iii) and demonstrates that ZnO nanowires can be synthesized in plasma-enhanced CVD at significantly lower process temperatures than in similar neutral gas-based processes and without compromising structural quality and performance of the nanowires. Our results are relevant to the development of next-generation nanoelectronic, optoelectronic, energy conversion and sensing devices based on semiconducting nanowires.  相似文献   
32.
We present results of computational simulations of tungsten-inert-gas and metal-inert-gas welding. The arc plasma and the electrodes (including the molten weld pool when necessary) are included self-consistently in the computational domain. It is shown, using three examples, that it would be impossible to accurately estimate the boundary conditions on the weld-pool surface without including the arc plasma in the computational domain. First, we show that the shielding gas composition strongly affects the properties of the arc that influence the weld pool: heat flux density, current density, shear stress and arc pressure at the weld-pool surface. Demixing is found to be important in some cases. Second, the vaporization of the weld-pool metal and the diffusion of the metal vapour into the arc plasma are found to decrease the heat flux density and current density to the weld pool. Finally, we show that the shape of the wire electrode in metal-inert-gas welding has a strong influence on flow velocities in the arc and the pressure and shear stress at the weld-pool surface. In each case, we present evidence that the geometry and depth of the weld pool depend strongly on the properties of the arc.  相似文献   
33.
Various morphologies of the vertically-aligned graphene flakes were fabricated on the nanoporous templates treated with metal ions in solutions, as well as coated with a thin gold layer and activated in the low-temperature Ar plasma. The thickness and level of structural defects in the graphene flakes could be effectively controlled by a proper selection of the pre-treatment method. We have also demonstrated that various combinations of the flake thickness and defect levels can be obtained, and the morphology and density of the graphene pattern can be effectively controlled. The result obtained could be of interest for various applications requiring fabrication of large graphene networks with controllable properties.  相似文献   
34.
Precise control of composition and internal structure is essential for a variety of novel technological applications which require highly tailored binary quantum dots (QDs) with predictable optoelectronic and mechanical properties. The delicate balancing act between incoming flux and substrate temperature required for the growth of compositionally graded (Si(1-x)C(x); x varies throughout the internal structure), core-multishell (discrete shells of Si and C or combinations thereof) and selected composition (x set) QDs on low-temperature plasma/ion-flux-exposed Si(100) surfaces is investigated via a hybrid numerical simulation. Incident Si and C ions lead to localized substrate heating and a reduction in surface diffusion activation energy. It is shown that by incorporating ions in the influx, a steady-state composition is reached more quickly (for selected composition QDs) and the composition gradient of a Si(1-x)C(x) QD may be fine tuned; additionally (with other deposition conditions remaining the same), larger QDs are obtained on average. It is suggested that ionizing a portion of the influx is another way to control the average size of the QDs, and ultimately, their internal structure. Advantages that can be gained by utilizing plasma/ion-related controls to facilitate the growth of highly tailored, compositionally controlled quantum dots are discussed as well.  相似文献   
35.
The kinetics of saturation of Ni catalyst nanoparticle patterns of the three different degrees of order, used as a model for the growth of carbon nanotips on Si, is investigated numerically using a complex model that involves surface diffusion and ion motion equations. It is revealed that Ni catalyst patterns of different degrees of order, with Ni nanoparticle sizes up to 12.5?nm, exhibit different kinetics of saturation with carbon on the Si surface. It is shown that in the cases examined (surface coverage in the range of 1-50%, highly disordered Ni patterns) the relative pattern saturation factor calculated as the ratio of average incubation times for the processes conducted in the neutral and ionized gas environments reaches 14 and 3.4 for Ni nanoparticles of 2.5 and 12.5?nm, respectively. In the highly ordered Ni patterns, the relative pattern saturation factor reaches 3 for nanoparticles of 2.5?nm and 2.1 for nanoparticles of 12.5?nm. Thus, more simultaneous saturation of Ni catalyst nanoparticles of sizes in the range up to 12.5?nm, deposited on the Si substrate, can be achieved in the low-temperature plasma environment than with the neutral gas-based process.  相似文献   
36.
Damage‐free encapsulation of molecular structures with functional nanolayers is crucial to protect nanodevices from environmental exposure. With nanoscale electronic, optoelectronic, photonic, sensing, and other nanodevices based on atomically thin and fragile organic matter shrinking in size, it becomes increasingly challenging to develop nanoencapsulation that is simultaneously conformal at atomic scale and does not damage fragile molecular networks, while delivering added device functionality. This work presents an effective, plasma‐enabled, potentially universal approach to produce highly conformal multifunctional organic films to encapsulate atomically thin graphene layers and metalorganic nanowires, without affecting their molecular structure and atomic bonding. Deposition of adamantane precursor and gentle remote plasma chemical vapor deposition are synergized to assemble molecular fragments and cage‐like building blocks and completely encapsulate not only the molecular structures, but also the growth substrates and device elements upon nanowire integration. The films are insulating, transparent, and conformal at sub‐nanometer scale even on near‐tip high‐curvature areas of high‐aspect‐ratio nanowires. The encapsulated structures are multifunctional and provide effective electric isolation, chemical and environmental protection, and transparency in the near‐UV–visible–near‐infrared range. This single‐step, solvent‐free remote‐plasma approach preserves and guides molecular building blocks thus opening new avenues for precise, atomically conformal nanofabrication of fragile nanoscale matter with multiple functionalities.  相似文献   
37.
38.
Controlled modification of surfaces is one of the key pursuits of the nanoscience and nanotechnology fields, allowing for the fabrication of bespoke materials with targeted functionalities. However, many surface modifications currently require painstakingly precise and/or energy intensive processing to implement, and are thus limited in scope and scale. Here, a concept which can enhance the capacity for control of surfaces is introduced: plasma‐assisted nucleation and self‐assembly at atomic to nanoscales, scalable at atmospheric pressures.  相似文献   
39.
The kinetic parameters of the pseudo-continuous cultivation of green microalgae in the film photobioreactor with countercurrent flows of gas and liquid phases and equipped with spirals on the internal surface of quartz tubes have ben studied. A mathematical model of mass transfer during microalgae cultivation in a film photobioreactor has been developed. The model includes a kinetic equation that considers the effect of the conditions of the cultivation of microalgae populations and cells interactions. A method has been developed for solving equations of the model that uses the Galerkin combination and the finite-element methods.  相似文献   
40.
The atmospheric pressure plasma jet (APPJ) was used to enhance the sensitivity of industrially important polyaniline (PANI) for detection of organic vapors from amides. The gas sensing mechanism of PANI is operating on the basis of reversible protonation or deprotonation, whereas the driving force to improve the sensitivity after plasma modifications is unknown. Herein we manage to solve this problem and investigate the sensing mechanism of atmospheric plasma treated PANI for vapor detection of amides using urea as a model. The results from various analytical techniques indicate that the plausible mechanism responsible for the improved sensitivity after plasma treatment is operating through a cyclic transition state formed between the functional groups introduced by plasma treatment and urea. This transition state improved the sensitivity of PANI towards 15 ppm of urea by a factor of 2.4 times compared to the non-treated PANI. This plasma treated PANI is promising for the improvement of the sensitivity and selectivity towards other toxic and carcinogenic amide analytes for gas sensing applications such as improving material processing and controlling food quality.
  相似文献   
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