Fatigue reliability in welded joints of offshore structures

Metal fatigue in welded joints in offshore structures is considered. Due to the considerable variability of conditions, a probabilistic approach is used. Theoretical studies of various aspects of the fatigue reliability problem in welded joints are presented. These include a study of the Palmgren-Miner rule, a modified linear model on S/N data, the use of the rainflow method of counting, and a closed form expression for the probability of fatigue failure. A probability model is derived as a suggested basis for an approach to fatigue design.     

Worst-case tolerance optimization of antenna systems

The application of recently developed algorithms to antenna systems design is demonstrated by the worst-case tolerance optimization of linear broadside arrays, using both spacings and excitation coefficients as design parameters. The resulting arrays are optimally immunized against deviations of the design parameters from their nominal values.     

Molecular correlations in sheared thermotropic copolyesters showing banded textures

Banded textures produced in a thermotropic liquid crystal polymer by shearing between glass slides are examined by using both transmission electron and polarized light microscopy. The periodic variation in director orientation about the shear axis, as measured by light microscopy, is shown to be distinctly different from that indicated by electron diffraction. Measurements of birefringence and observation of Zernicke phase contrast indicate periodic variations in optical properties of the polymer, in step with the bands. Such effects are accounted for in terms of a synchronous rotation of the planar aromatic groups about the molecular chain axes. Evidence for an out-of-plane component of molecular orientation is also presented.     

Constant stretching rate experiments on low density polyethylene

A simple apparatus for elongational test of molten polymers is presented. Its realiability is demonstrated by means of stress growth in constant stretching rate experiments and relaxation test on a low density polyethylene sample.     

An expert diagnostic system for the MACRO experiment at the GranSasso Laboratory

The maintenance of the MACRO (a Monopoles, Astrophysics and Cosmic Ray Observatory), a large-area detector that will be used to search for rare constituents or phenomena in cosmic radiation penetrating deep underground, is addressed. A real-time expert system for diagnosing detector and data acquisition system anomalies, which is based on the NEXPERT commercial tool, is described. It performs online diagnosis and, if an abnormal condition is identified, takes the appropriate action to reduce the unavailability of the apparatus. The data acquisition system is CAMAC-based, and the sensor modules, which gather the significant values for diagnosis, are implemented in the VME crate     

A study of three techniques used in the diffraction analysis ofshaped dual-reflector antennas

An examination is presented of three techniques used for the efficient computation of fields diffracted by a subreflector that has been shaped by geometrical optics synthesis. It is found that these techniques, which are based on the geometrical theory of diffraction (GTD), produce errors in the computed fields that are specific to shaped reflectors. These errors are examined for a reflector system shaped to produce maximum gain from a tapered feed illumination. The discrepancies are directly related to the caustic being located near an observation point of the GTD calculations. The errors found are localized, and they increase in magnitude as the caustic approaches the main reflector. In a general offset geometry, the location of the caustic may be located arbitrarily close to the main reflector given a prescribed output aperture distribution. For the specific case considered here-the common situation of shaping to produce maximum gain-the caustic is located near the edge of the main reflector and on the reflection shadow boundary. A local correction is derived which creates a uniform solution through the caustic and across the reflection shadow boundary. Away from this point the calculation recedes to the standard GTD solution     

Electromagnetic scattering by a straight thin wire

The traveling-wave energy, which multiply diffracts on a straight thin wire, is represented as a sum of terms, each with a distinct physical meaning, that can be individually examined in the time domain. Expressions for each scattering mechanism on a straight thin wire are cast in the form of four basic electromagnetic wave concepts: diffraction, attachment, launch, and reflection. Using the basic mechanisms from P.Ya. Ufimtsev (1962), each of the scattering mechanisms is included into the total scattered field for the straight thin wire. Scattering as a function of angle and frequency is then compared to the moment-method solution. These analytic expressions are then extended to a lossy wire with a simple approximate modification using the propagation velocity on the wire as derived from the Sommerfeld wave on a straight lossy wire. Both the perfectly conducting and lossy wire solutions are compared to moment-method results, and excellent agreement is found. As is common with asymptotic solutions, when the electrical length of wire is smaller than 0.2 λ the results lose accuracy. The expressions modified to approximate the scattering for the lossy thin wire yield excellent agreement even for lossy wires where the wire radius is on the order of skin depth     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs