Study of photosensitive mixtures of TMAE and helium, hydrocarbon or CF4-based carrier gases

Among the photocathodes used for particle identification based on the Cherenkov Ring Imaging technique, the TMAE molecule is still the best in terms of quantum efficiency. Despite the fact that TMAE gaseous photocathodes have already been used in a number of large experiments, one still seeks answers to many detailed questions. We present a systematic study of gaseous photocathodes based on TMAE mixed with helium, hydrocarbon and CF₄-based gases at normal pressure. The study includes a measurement of the electron drift velocity, gas quenching properties, single electron pulse height spectra and anode wire aging. The paper makes recommendations for carrier gas mixtures to obtain the best quenching, and suggests how to manage TMAE wire aging. This study was motivated by a specific particle identification detector proposal, the Fast Drift CRID proposed for the B-factory at SLAC.     

The evolution of custom microarray manufacture

Given the enormous size of the genome and that there are potentially many other types of measurements we need to do to understand it, it has become necessary to pick and choose one's targets to measure because it is still impossible to evaluate the entire genome all at once. What has emerged is a need to have rapidly customizable microarrays. There are two dominant methods to accomplish custom microarray synthesis, Affymetrix-like microarrays manufactured using light projection rather than semiconductor-like masks used by Affymetrix to mass manufacture their GeneChip/sup TM/ arrays now, or the ink-jet printing method employed by Agilent. The manufacture of these custom Affymetrix-like microarrays can now be done on a digital optical chemistry (DOC) machine developed at the University of Texas Southwestern Medical Center, and this method offers much higher feature numbers and feature density than is possible with ink-jet printed arrays. On a microarray, each feature contains a single genetic measurement. The initial DOC prototype has been described in several publications, but that has now led to a second-generation machine. This machine reliably produces a number of arrays daily, has been deployed against a number of biomedical questions, is being used in new ways and has also led to a number of spin-off technologies.     

What's different about Six Sigma?

The Six Sigma approach is one of the more recent initiatives adopted by organisations who seek to make a paradigm shift in performance improvement (attacking at least one of the cost, quality, delivery measurements for improved competitiveness). Is there anything new about Six Sigma, does it offer improvements that other approaches cannot, or is it just a clever delivery of repackaged goods? The author investigates the above questions related to the Six Sigma approach     

An expert diagnostic system for the MACRO experiment at the GranSasso Laboratory

The maintenance of the MACRO (a Monopoles, Astrophysics and Cosmic Ray Observatory), a large-area detector that will be used to search for rare constituents or phenomena in cosmic radiation penetrating deep underground, is addressed. A real-time expert system for diagnosing detector and data acquisition system anomalies, which is based on the NEXPERT commercial tool, is described. It performs online diagnosis and, if an abnormal condition is identified, takes the appropriate action to reduce the unavailability of the apparatus. The data acquisition system is CAMAC-based, and the sensor modules, which gather the significant values for diagnosis, are implemented in the VME crate     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

Sequential tripping strategy for a transmission network back-upprotection expert system

This paper describes a sequential tripping strategy used in a wide area back-up protection expert system (BPES) to combat situations in which protection relays have maloperated or information is missing. The BPES is an innovative back-up protection scheme designed to prevent the occurrence of widespread blackouts. The BPES evaluates the certainty that transmission lines are likely to be affected by the fault and uses a sequential tripping strategy to isolate the fault if a firm decision is not available due to maloperated relays and/or missing information. The mode of analysis and the sequential tripping strategy ensures that the BPES will clear a fault at minimum risk to the network. An example is included to demonstrate how the certainty factor based sequential tripping strategy is employed by the BPES to clear a fault which occurred on the South Western part of the UK National Grid System     

Microprocessor-Based Control of an Ion Beam Deposition System

A microprocessor-based system with 32 A/D, 24 D/A, and 16 ac load controllers, has been designed and built to monitor and control an ion beam thin-film deposition system. The A/D and D/A channels have electrical isolation of 7.5 kV between channels and between input and output. The microprocessor system keeps the ion beam deposition parameters stable for extended periods of operation and it is proposed as a means to greatly simplify switching from one deposition species to another to grow thin multilayer or alloy films.