Wear and Creep Characteristics of a Carbon‐Derived Si3N4/SiC Micro/Nanocomposite

In the presented work some properties of a recently developed Si₃N₄/SiC micro/nanocomposite have been investigated. The material was tested using a pin on disc configuration. Under unlubricated sliding conditions using Si₃N₄ pin at 50 % humidity, the friction coefficient was in the range of 0,6 ‐ 0,7. The reduction of humidity resulted in a lower coefficient of friction, in vacuum the coefficient of friction had a value of about 0,6. The wear resistance in vacuum was significantly lower then that in air. The wear patterns on the Si₃N₄+SiC disc revealed that mechanical fracture was the wear controlling mechanism. Creep tests were realized in four point bending configuration in the temperature interval 1200‐1400 °C at stresses 50,100 and 150 MPa and the minimal creep deformation rate was established for each stress level. The activation energy, established from the minimal creep deformation had a value of about 360 kJ/mol and the stress exponent values were in the range of 0.8‐1.28. From the achieved stress exponents it can be assumed that under the studied load/temperature conditions the diffusion creep was the most probable creep controlling mechanism.     

Development of a Continuous Segmented Flow Tubular Reactor and the “Scale‐out” Concept – In Search of Perfect Powders

The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.     

Context-Processing Deficits in Schizotypal Personality Disorder.

Research suggests that schizotypal personality disorder (SPD) is a part of the spectrum of schizophrenia-related illnesses. This article hypothesizes that a deficit in the representation and maintenance of context is a core cognitive disturbance in schizophrenia and that SPD individuals should demonstrate context-processing deficits. To test this hypothesis, the authors administered 3 versions of their AX-CPT task, designed to assess context processing, to 35 healthy controls and 26 individuals with DSM-IV SPD. They also administered working memory and selective attention tasks. SPD individuals displayed context representation deficits similar to those found in schizophrenia but did not show the same additional deficits in context maintenance. Context processing was strongly associated with working memory and selective attention performance in the SPD individuals. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs

In this letter, bandpass filters with one or two tunable transmission zeros are proposed. The reconfigurable transmission zeros are implemented through varactors in combination with tapped quarter-wavelength stubs. Based on mixed mode simulations including EM simulation and circuit simulation, the proposed filters were designed and fabricated on low-cost FR4 board. The measurement results verified the design concepts.     

Viability of bifidobacteria in commercial yogurt products in North Carolina during refrigerated storage

Fifty-eight commercial yogurt products of seven brands (which claimed to include bifidobacteria) were obtained from local stores in Greensboro, North Carolina, USA. These products were examined at 0, 1, 2, 3 and 4 weeks for the viability of bifidobacteria and yogurt starter culture during refrigerated storage at 4°C. Our results showed that bifidobacteria counts were variable, ranging from 0 to 5.5 log cfu/mL. The average yogurt starter culture counts ranged from 5.20 to 8.87 log cfu/mL and 7.51–8.94 log cfu/mL for Lactobacillus delbrueckii spp. bulgaricus and Streptococcus thermophilus , respectively. Of the 58 products tested, only 44 products (76%) contained viable cultures. Viability of bifidobacteria in yogurt samples remained within the same levels during 3 weeks of storage at 4°C; however, the bacterial count started to decline during the fourth week. These results suggest optimal beneficial consumption of yogurt foods with live bifidobacteria should occur within 3 weeks of production. Results obtained from this research could be used by the industry to develop new technologies to ensure consumers receive high-quality products.     

All-optical seed pulse extraction for packet synchronization based on self-induced effects in a vertical-cavity semiconductor gate

Self-induced effects in a passive polarization-independent vertical-cavity semiconductor gate are investigated numerically and experimentally. We demonstrate all-optical seed-pulse extraction for synchronization of differential phase-shift keying and ON-OFF keying packets at 10 Gb/s. Our results provide evidence that vertical-cavity gates, exploiting saturable absorption in semiconductor quantum-wells, exhibit attractive performances in terms of efficiency, power consumption, and polarization independency.     

The colored revolution of bioimaging

This paper provides an overview of the main aspects of modern fluorescence microscopy. It covers the principles of fluorescence and highlights the key discoveries in the history of fluorescence microscopy. The paper also discusses the optics of fluorescence microscopes and examines the various types of detectors. It also discusses the signal and image processing challenges in fluorescence microscopy and highlights some of the present developments and future trends in the field.