Surface structure of silver thin films on In2O3:Sn and Al2O 3 †

Surface structure of thin silver films (200 Å) on two technologically important films, indium tin oxide (ITO) and aluminium oxide, has been studied using scanning tunneling microscope. ITO films were prepared by reactive electron beam evaporation. Aluminium oxide films were prepared by oxidizing 2000 Å thick aluminium films evaporated on to H₂ terminated single crystal silicon substrates. The surface structure of silver on ITO and aluminium oxide appeared to be same and was characteristic of Stranski-Krastanov type. The observed asymmetry in the island shape was attributed to the anisotropic nature of the strain fields surrounding the nucleation centres.     

Micro-stress distribution within polycrystalline aggregate

Summary The three-dimensional Poisson-Voronoi model, which is topologically equivalent to the microstructure of real ceramics and metals, has been used to study the stress distribution within a simulated polycrystalline aggregate having 200 grains. Micro-stresses such as the maximum principal stress, maximum shear stress, first invariant of stress, and Von-Mises stress are found to vary systematically with the anisotropy of single crystal.     

Kinetics and mechanism of oligomerization of cardanol using acid catalysts

The kinetics and mechanism of oligomerization of cardanol over acid catalysts were studied. GPC results showed the formation of a mixture of oligomers such as dimer, trimer, tetramer, etc. IR spectra of the products of oligomerization showed a decrease in the intensity of the double bond absorption band at 1630 cm^?1 and the disappearance of terminal vinyl bands at 895 cm^?1 and 907 cm^?1. ¹H NMR spectra showed drastic changes in the unsaturated proton resonance signals at 5.5δ with respect to saturated protons at 0.2–2.5δ. The ratio of resonance integrals of unsaturated to saturated protons decreased from 1 : 6.5 to 1 : 20 after oligomerization. GPC studies showed that the rate of formation of the dimer, trimer, tetramer, etc. follow an identical path and that the individual oligomers are formed in the same weight percentage at any time during the reaction. A kinetic scheme is proposed to explain this phenomenon. Kinetic studies showed that the oligomerization reaction follows first order kinetics with respect to the monomer concentration and the rate constant is K = 6.6 × 10^?5s^?1. A probable mechanism for the oligomerization of cardanol is proposed.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Experience with Applying Formal Methods to Protocol Specification and System Architecture

In the last three years or so we at Enterprise Platforms Group at Intel Corporation have been applying formal methods to various problems that arose during the process of defining platform architectures for Intel's processor families. In this paper we give an overview of some of the problems we have worked on, the results we have obtained, and the lessons we have learned. The last topic is addressed mainly from the perspective of platform architects.     

Oxygen-enrichment of YBa2Cu3 YBa2Cu3O7-δ using the fluidization techniqueusing the fluidization technique

The oxygen-deficient phase of the highT _c superconductor, YBa₂Cu₃O₇, was oxygen-enriched using the fluidization technique to give good superconducting properties. The normal method of oxygen treatment at 900°C for 24 h and at 600°C for 24 h has been reduced to just one treatment at 600°C for 12 h by the fluidization technique to achieve almost the same strength of superconducting signal for the YBa₂Cu₃O₇ powder, which establishes the attractiveness of the latter route for the large-scale preparation of superconducting material. The particle sizes were in the range 0–90, 90–180 and 180–420 μm. The fluidized particles were crystalline with orthorhombic distortion.T _c ^onset , estimated using the a.c. magnetic susceptibility method, was 91·3 K. The volume fraction of superconducting material in the product was 83·7–85·3%, one of the highest values reported so far for YBa₂Cu₃O₇.     

On the improvement of detection characteristics of trans-stilbene crystals by improving crystal perfection

Organic molecular scintillating crystals are noted for their good timing and particle discrimination process. Trans-stilbene is one such candidate noted for its good particle detection characteristics for the past five decades. Progressive strengthening of detection characteristics of trans-stilbene has been attempted by improving crystal perfection. A series of timing resolution studies have been carried out for the Bridgman grown trans-stilbene crystals under different experimental conditions. The results were compared with the previously reported values. Pulse shape discrimination process has been carried out for ²⁴¹Am and ²⁵²Cf sources and good discrimination has been obtained for gamma-alpha and gamma-neutron sources from the grown organic phosphor crystal. Electronic Publication