Investigation of the interface region produced by molecular beam epitaxial regrowth

The interface region generated by molecular beam epitaxial regrowth has been studied in detail. Regrowth was carried out on epitaxial GaAs after a variety of realistic device processing steps. Combinations of wet chemical etching and ion milling with and without annealing were used with the objective of establishing the best procedure for integrated technologies during regrowth. Capacitance voltage measurements showed perturbations in the carrier profile corresponding to depletion and accumulation regions at the interface which are directly related to interface states at and around the regrowth interface. The measured concentration of the interface states are in the range 1.2 × 10¹⁰ to 7.05 × 10¹¹ cm⁻². The former is one of the lowest reported till date. The concentration of deep traps in the regrown layer and interface, observed by deep level transient spectroscopy, is much lower than the interface state density. Their contribution to carrier perturbation is insignificant, except in one case where an electron trap has a rather high concentration. Results of secondary ion mass spectroscopy indicate that the presence of carbon at the regrown interface is not principally responsible for creating the high resistivity interface region. Our data favor the concept of a disordered region created at the interface during regrowth. Interface state density and trap densities are much larger in the wet chemically etched samples, which is further supported by the results of temporal photoresponse measurements on junction photodiodes. The overall characteristics of the dry etched regrowth interfaces seem to be much more promising than the wet chemical etched ones. On leave from the Institute of Radiophysics and Electronics, The University of Calcutta, Calcutta 700 009, India.     

Genomic organization of the human TIMP-1 gene. Investigation of a causative role in the pathogenesis of X-linked retinitis pigmentosa 2

PURPOSE: To evaluate the role of TIMP-1 in inherited retinal degeneration. METHODS: The genomic structure of the TIMP-1 gene was established and male patients with x-linked retinitis pigmentosa 2 from five families were screened for sequence alterations by direct sequencing in all exons, exon-intron boundaries, and the 5' upstream region of the gene. RESULTS: TIMP-1 appears to be expressed in the retina at low levels and consists of six exons spanning a genomic region of approximately 4.5 kb on Xp11.23. No disease-specific sequence alterations were identified. A site substitution in exon 5 was observed in samples from control subjects and patients, but it did not alter the amino acid sequence of the protein product. CONCLUSIONS: The results of this study exclude mutations in the TIMP-1 coding sequence, splice sites, and the 5' upstream region as a cause of retinal degeneration in x-linked retinitis pigmentosa 2. However, an as yet unidentified regulatory element that lies outside these intervals may be implicated. The role of this tightly regulated protein in the normal functioning of the retina has yet to be determined.     

Nature of growth inhibitors for Trogoderma granarium Everts (Coleoptera: Dermestidae) in lentil (Lens esculenta Moench.) and French bean (Phaseolus vulgaris L.)

Steaming of lentil (Lens esculenta Moench.) and French bean (Phaseolus vulgaris L.) made them suitable for Trogoderma granarium Everts. Addition of glucose, casein, cholesterol, lard, nucleic acid, McCollum salt mixture, vitamins of the B group and -methionine indicated that the poor food value of lentil was due to the presence of heat labile inhibitor and dietary deficiency of cholesterol. But in the case of French bean heating probably facilitated, apart from destruction of heat labile inhibitor, the release of an assimilable form of carbohydrate needed for proper growth and development. The possibility of the presence of qualitatively and/or quantitatively different types of inhibitors in these pulses was suspected.     

A comparative study of YBCO powders prepared by different processes

Abstracts are not published in this journal This revised version was published online in November 2006 with corrections to the Cover Date.     

Transistor-level optimization of digital designs with flex cells

The flex-cell approach, either alone or in combination with standard cells, provides an optimally tuned set of building blocks for integrated circuit design when optimality is measured using accepted and quantifiably definable metrics such as clock speed, die size, and power consumption.     

CMOS implementation of a multiple-valued logic signed-digit fulladder based on negative-differentiaI-resistance devices

This paper presents a fully integrated implementation of a multivalued-logic signed-digit full adder (SDFA) circuit using a standard 0.6-μm CMOS process. The radix-2 SDFA circuit, based on two-peak negative-differentiaI-resistance (NDR) devices, has been implemented using MOS-NDR, a new prototyping technique for circuits that combine MOS transistors and NDR devices. In MOS-NDR, the folded current-voltage characteristics of NDR devices such as resonant-tunneling diodes (RTDs) are emulated using only nMOS transistors. The SDFA prototype has been fabricated and correct function has been verified. With an area of 123.75 by 38.7 μm² and a simulated propagation delay of 17 ns, the MOS-NDR prototype is more than 15 times smaller and slightly faster than the equivalent hybrid RTD-CMOS implementation     

Biogenic synthesis and thermo‐magnetic study of highly porous carbon nanotubes

Nanomaterials synthesis using natural sources is the technology to up come with advanced materials through extracts of plant, microorganisms, poultry waste etc. In this study, the authors report the synthesis of porous carbon nanotubes using high‐temperature decomposition technique facilitated by cobalt salt using chicken fats, a poultry waste as a precursor. Since chicken fats contain fatty acids which can decompose into short hydrocarbon chains and cobalt can act as the catalyst. The formation of carbon nanotubes was confirmed by Raman spectra, peaks at 1580 and 1350.46 cm⁻¹ confirmed the graphite mode G‐band and structural imperfections defect mode D‐band, respectively. Transmission electron microscopy showed the formation of tube‐like structures. Nitrogen adsorption–desorption studies showed the high‐surface area of 418.1 m² g⁻¹ with an estimated pore diameter of 8.1 nm. Thermogravimetry analysis–derivative thermogravimetric analysis–differential thermal analysis showed the instant weight loss at 517°C attributed to the rapid combustion of nanotubes. A vibrating‐sample magnetometer showed the paramagnetic nature of the so‐formed carbon nanotubes formed.Inspec keywords: transmission electron microscopy, infrared spectra, nanomagnetics, pyrolysis, decomposition, adsorption, desorption, carbon nanotubes, differential thermal analysis, thermal analysis, nanofabrication, Raman spectra, X‐ray diffraction, scanning electron microscopy, paramagnetic materialsOther keywords: biogenic synthesis, highly porous carbon nanotubes, microorganisms, high‐temperature decomposition technique, cobalt salt, chicken fats, fatty acids, short hydrocarbon chains, Raman spectra, graphite mode G‐band, structural imperfections defect mode D‐band, transmission electron microscopy, paramagnetic nature, thermo‐magnetic properties, poultry waste, nitrogen adsorption‐desorption studies, thermogravimetry analysis, differential thermal analysis, carbon nanotubes, temperature 517.0 degC, C     

Effect of post-deposition annealing on microstructural and optical properties of barium strontium titanate thin films deposited by r.f. magnetron sputtering

The effect of post-deposition annealing on the structural and optical properties of barium strontium titanate, Ba_0.8Sr_0.2TiO₃ film has been investigated. The films have been deposited on oxidized p-silicon substrates by r.f. magnetron sputtering followed by annealing in O₂ atmosphere at different temperatures. In situ deposition has also been carried out at 550 °C for comparison. The nature of the variation of refractive index and extinction coefficient with annealing temperature and wavelength has been studied. Absorption band edges shift towards lower photon energy values as the temperature is increased causing a reduction in the optical band gap energy. Infrared absorption bands show a cubic symmetry at lower frequency and are found to be broadened and even split at higher frequency.     

Characteristics of a photonic bandgap single defect microcavityelectroluminescent device

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70-Å compressively strained In_0.15Ga_0.85As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β≈0.06