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41.
亚微米互补金属氧化物半导体(CMOS)的最新发展,可望进一步扩展RFID技术的应用。高精度供应链管理、无接触POS交易、防伪和资产追踪/监测技术所带来的各项优势,正推动着RFID技术的迅速普及。但是,这种新技术自身也面临着许多测试挑战。本文讨论复杂RFID工作环境中的测试挑战,包括多个阅读器、密集模式环境和预先存在的非RFID信号可能引起的吞吐量和通信问题。  相似文献   
42.
We summarize a large body of experimental and theoretical work, especially in Si-doped GaAs and Al x Ga1-x As, regarding the bistability of theDX center. There is good evidence that theDX center is just the simple donor, and that each donor can exist in either of two distinct lattice configurations, each with its own spectrum of bound electronic states. Generally, the substitutional configuration binds electrons in shallow hydrogenic states, but many observations also indicate a deep (highly localized) state ofA 1 symmetry. These states are to be distinguished from bound states of a lattice-distorted configuration, the lowest-lying of which is the deepDX level. The occupation of theDX level in thermal equilibrium with the states of the conduction band can be reasonably well modeled by assuming thatDX is either a one-electron or a two-electron state, and we discuss the reasons for this ambiguity. However, we then show that such thermal equilibrium results are consistent with thermal capture and emission kineticsonly if we assume thatDX is a two-electron state. Our results thus support the model of Chadi and Chang in which the distorted configuration is stabilized by capture of two electrons. In other words, the defect exhibits negative effective correlation energy (negativeU).  相似文献   
43.
The effect of structural parameters on the transport characteristics from 15 to 300 K of molecular beam epitaxy-grown InGaAs/InAlAs two dimensional electron gas structures lattice-matched to InP is determined. The InAlAs buffer layer thickness was varied from 1000 to 10,000Å. One sample also incorporated a InGaAs/InAlAs superlattice. The buffer layer thickness and structure had almost no effect on the mobility or sheet density. The InAlAs spacer layer was varied from 25 to 200Å. Increases in the InAlAs spacer thickness resulted in a monotonically decreasing sheet density and a peak in the mobility versus spacer thickness at 100Å. The highest 77 K mobility was 66,700 cm2/V/sds withN D =1.2×1012 cm?2. The effect of illumination and temperature on the sheet concentration in these structures as well as on “bulk” InAlAs:Si was much smaller than in Al x Ga1?x As/GaAs structures or “bulk” Al x Ga1?x As, forx?0.30, indicating that devices based on this material system will not be characterized by many of the device instabilities observed in the AlGaAs/GaAs system.  相似文献   
44.
A high-resolution heterodyne radiometer that utilizes a crossed-guide harmonic mixer pumped by a 300 GHz carcinotron as a local oscillator has been developed for submillimeter wavelengths. Previous investigations of the radiation transfer properties of spectral lines in supersonic gas flow have been extended to longer wavelengths using the tunability of this system. With less than 2 mW of fundamental local oscillator power, traces of the 557 GHz ortho-H2O rotational transition (1_{10} leftarrow 1_{01}), Doppler-broadened to only a few MHz, were observed in absorption against a continuum background.  相似文献   
45.
Traditional acoustic speech recognition accuracies have been shown to deteriorate in highly noisy environments. A secondary information source is exploited using surface myoelectric signals (MES) collected from facial articulatory muscles during speech. Words are classified at the phoneme level using a hidden Markov model (HMM) classifier. Acoustic and MES data was collected while the words "zero" through "nine" were spoken. An acoustic expert classified the 18 formative phonemes in low noise levels [signal-to-noise ratio (SNR) of 17.5 dB] with an accuracy of 99%, but deteriorated to approximately 38% under simulations with SNR approaching 0 dB. A fused acoustic-myoelectric multiexpert system, without knowledge of SNR, improved on acoustic classification results at all noise levels. A multiexpert system, incorporating SNR information, obtained accuracies of 99% at low noise levels while maintaining accuracies above 94% during low SNR (0 dB) simulations. Results improve on previous full word MES speech recognition accuracies by almost 10%.  相似文献   
46.
Continuous biaxially textured CdTe films were grown on biaxial CaF2 buffer layers. The CaF2 nanorods were grown by oblique angle vapor deposition and possessed a {111} 〈121〉 biaxial texture. The CdTe film was deposited by metal organic chemical vapor deposition (MOCVD). Film morphology and the CdTe/CaF2 interface were studied by scanning electron microscopy and transmission electron microscopy. Characterization showed that small CdTe grains formed initially from the CaF2 surfaces. These small grains then merged into large columnar grains during growth. Analysis revealed that the crystalline orientation of the CdTe film followed the biaxial texture of the CaF2 nanorods.  相似文献   
47.
The linear sampling method (LSM) offers a qualitative image reconstruction approach, which is known as a viable alternative for obstacle support identification to the well-studied filtered backprojection (FBP), which depends on a linearized forward scattering model. Of practical interest is the imaging of obstacles from sparse aperture far-field data under a fixed single frequency mode of operation. Under this scenario, the Tikhonov regularization typically applied to LSM produces poor images that fail to capture the obstacle boundary. In this paper, we employ an alternative regularization strategy based on constraining the sparsity of the solution's spatial gradient. Two regularization approaches based on the spatial gradient are developed. A numerical comparison to the FBP demonstrates that the new method's ability to account for aspect-dependent scattering permits more accurate reconstruction of concave obstacles, whereas a comparison to Tikhonov-regularized LSM demonstrates that the proposed approach significantly improves obstacle recovery with sparse-aperture data.  相似文献   
48.
The shift of electronics industry towards the use of lead-free solders in components manufacturing brought also the challenge of addressing the problem of tin whiskers. Manufacturers of high reliability and safety critical equipment in sectors such as defence and aerospace rely increasingly on the use of commercial-of-the-shelf (COTS) electronic components for their products and systems. The use of COTS components with lead-free solder plated terminations comes with the risks for their long term reliability associated with tin whisker growth related failures. In the case of leaded type electronic components such as Quad Flat Package (QFP) and Small Outline Package (SOP), one of the promising solutions to this problem is to “re-finish” the package terminations by replacing the lead-free solder coatings on the leads with conventional tin–lead solder. This involves subjecting the electronic components to a post-manufacturing process known as Hot Solder Dip (HSD). One of the main concerns for adopting HSD (refinishing) as a strategy to the tin whisker problem is the potential risk for thermally induced damage in the components when subjected to this process.  相似文献   
49.
A novel approach to muscle fatigue assessment is proposed. A function is used to map multiple myoelectric parameters representing segments of myoelectric data to a fatigue estimate for that segment. An artificial neural network is used to tune the mapping function and time-domain features are used as inputs. Two fatigue tests were conducted on five participants in each of static, cyclic and random conditions. The function was tuned with one data set and tested on the other. Performance was evaluated based on a signal to noise metric which compared variability due to fatigue factors with variability due to nonfatiguing factors. Signal to noise ratios for the mapping function ranged from 7.89 under random conditions to 9.69 under static conditions compared to 3.34-6.74 for mean frequency and 2.12-2.63 for instantaneous mean frequency indicating that the mapping function tracks the myoelectric manifestations of fatigue better than either mean frequency or instantaneous mean frequency under all three contraction conditions.  相似文献   
50.
The nature of the atomic configuration and the bonding within epitaxial Pt‐graphene films is investigated. Graphene‐templated monolayer/few‐multilayers of Pt, synthesized as contiguous 2D films by room temperature electrochemical methods, is shown to exhibit a stable {100} structure in the 1–2 layer range. The fundamental question being investigated is whether surface Pt atoms rendered in these 2D architectures are as stable as those of their bulk Pt counterparts. Unsurprisingly, a single layer Pt on the graphene (Pt_1ML/GR) shows much larger Pt dissociation energy (?7.51 eV) than does an isolated Pt atom on graphene. However, the dissociation energy from Pt_1ML/GR is similar to that of bulk Pt(100), ?7.77 eV, while in bi‐layer Pt on the graphene (Pt_2ML/GR), this energy changes to ?8.63 eV, surpassing its bulk counterpart. At Pt_2ML/GR, the dissociation energy also slightly surpasses that of bulk Pt(111). Bulk‐like stability of atomically thin Pt–graphene results from a combination of interplanar Pt? C covalent bonding and inter/intraplanar metallic bonding. This unprecedented stability is also accompanied by a metal‐like presence of electronic states at the Fermi level. Such atomically thin metal‐graphene architectures can be a new stable platform for synthesizing 2D metallic films with various applications in catalysis, sensing, and electronics.  相似文献   
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