Possibility to Use Hydrothermally Synthesized CuFeS<Subscript>2</Subscript> Nanocomposite as an Acceptor in Hybrid Solar Cell

Here we have approached the plausible use of CuFeS₂ nanocomposite as an acceptor in organic–inorganic hybrid solar cell. To produce CuFeS₂ nanocomposite, hydrothermal strategy was employed. The room-temperature XRD pattern approves the synthesized material as CuFeS₂ with no phase impurity (JCPDS Card no: 37-0471). The elemental composition of the material was analyzed from the TEM-EDX data. The obtained selected area electron diffraction (SAED) planes harmonized with the XRD pattern of the synthesized product. Optical band gap (4.14 eV) of the composite from UV–Vis analysis depicts that the synthesized material is belonging to wide band gap semiconductor family. The HOMO (? 6.97 eV) and LUMO (? 2.93 eV) positions from electrochemical study reveal that there is a possibility of electron transfer from MEH-PPV to CuFeS₂. The optical absorption and photoluminescence spectra of MEH-PPV:CuFeS₂ (donor:acceptor) composite were recorded sequentially by varying weight ratios. The monotonic blue shifting of the absorption peak position indicated the interaction between donor and acceptor materials. The possibility of electron transfer from donor (MEH-PPV) to acceptor (CuFeS₂) was approved with photoluminescence analysis. Subsequently, we have fabricated a hybrid solar cell by incorporating CuFeS₂ nanocomposite with MEH-PPV in open atmosphere and obtained 0.3% power conversion efficiency.     

Frame selection for OCR from video stream of book flipping

Multimedia Tools and Applications - Optical Character Recognition (OCR) in video stream of flipping pages is a challenging task because flipping at random speed causes difficulties in identifying...     

Robust vectorization method for electrical circuit drawings using component morphology

Pattern Analysis and Applications - Decomposition and representation of electrical circuit drawings to a suitable vector form has widespread applications related to data compression, storage,...     

Study of device parameters for work function engineered gate recessed S/D SOI MOSFET incorporating quantum mechanical effects

For the first time analytical modeling of nanoscale work function engineered gate recessed S/D SOI MOSFET including quantum mechanical effects has been presented based on the solution of 1 D Schrödinger and 2 D Poisson’s equation. As classical models are insufficient in nanoscale regime, quantization effect has been incorporated in this model to explore the actual potential profile characteristics along the film thickness. An extensive calculation has been carried out with proper boundary condition to solve the 2-D Poisson’s equation for device parameters. The value of deviated quantum threshold voltage has been calculated from classical model, and then these two are added to resolve the final quantum threshold voltage. Channel length modulation has also been taken into consideration during drain current modeling for this structure. A comparative study based on the threshold voltage, drain current, transconductance and drain conductance has been presented for the classical and quantum model. The results are also compared with the simulation of SILVACO Deck build, Deck Editor Version 4.2.5.R (aka 4.2.5.R) device simulator to validate the proposed model.

     

Wide‐bandwidth multifrequency circularly polarized monopole antenna for wireless communication applications

In this article, wideband circularly polarized monopole antennas with multiresonating frequencies are presented for Bluetooth, WLAN, WiMAX, and X‐band applications. The designed antennas have dimensions of 50 × 35 × 1.6 mm³. Two different substrates (FR4‐epoxy and PTFE) are used for fabricating the antennas. The antennas consist of corner truncated I‐shaped and C‐shaped strips excited by a 50 Ω microstrip feed line. The parametric analyses are performed with the help of Ansoft HFSS V.11 EM simulator. Both antennas have been fabricated and measured. The measured percentage bandwidth of the antenna made by FR4 substrate is 31.32% (centered at 1.66 GHz), and 64.85% (centered at 5.69 GHz). The percentage bandwidth of antenna made by PTFE substrate is 20.57% (centered 2.43 GHz) and 68.74% (centered at 7.39 GHz). In addition to that, there exists 3 dB AR bandwidth for LHCP of about 1050 MHz for 5.2 GHz WLAN‐band. The reflection coefficient, radiation patterns, and the gains of both the antennas are studied in detail. It is found that the measured and simulated results are in good agreement.     

Photo-electrocatalytic methanol oxidation on Pd decorated BiOI nanoparticles in alkali

Journal of Materials Science - Palladium–bismuth oxoiodide nanocomposites of various molar ratios of Pd and BiOI have been synthesized by the facile solvothermal method following the chemical...     

Extended exploiting modification direction based steganography using hashed-weightage Array

Multimedia Tools and Applications - Steganography is the method of hiding secret message information in various cover media like text, image, audio, video and others without raising suspicion to...