用动态规划神经网络模型研究多水库系统的水量分配(下)

为了分析多水库系统中两座水库之间灌溉用水的分配问题，建立了基到动态规划的神经网络模型。为了研究从一座上游水库取水在下游两座之库之间进行水量分配的问题，提出了3个状态变量和4个决策变量的改进的动态规划算法。采用神经网络模型，用3个状态变量动态规划算法得出调度原则，就所研究的多水库系统实例来说，新的动态规划神经网络模型的性能很好，将该模型的性能与临时凑合的标准调度原则和以前推荐使用的约束动态规划神经网络模型进行了比较。     

Small–Capacity Modular Units. Experience in Startup and Management

A series of small–capacity units has recently been constructed in regions of oil field development and crude oil and gas condensate production to satisfy the requirements for such petroleum products as naphtha, diesel fuel, kerosene, and boiler fuel and to reduce costs for delivery of these products. There are almost no data in the technical literature, particularly in periodicals, on the construction and operation of small–capacity units. We attempt to generalize the experience of Orgeneftekhimzavody Trust in this area. We hope that this experience will be useful to specialists in the development and management of small–capacity plants.     

Reducible rank codes and their applications to cryptography

We present a new family of so-called reducible rank codes which are a generalization of rank product codes . This family includes maximal rank distance (MRD) codes for lengths n>N in the field F/sub N/. We give methods for encoding and decoding reducible rank codes. A public key cryptosystem based on these codes and on the idea of a column scrambler is proposed. The column scrambler "mixes" columns of a generator (parity-check) matrix of a code. It makes the system more resistant to structural attacks such as Gibson's attacks. Possible attacks on the system are thoroughly studied. The system is found to be secure against known attacks for public keys of about 16 kbits and greater.     

Measurement and Identification of the Parameters of SPICE-Models of a Bipolar Transistor

A method of measuring and identifying the static parameters of a bipolar transistor is considered. The characteristic of the transistor, from which the parameters of the model are determined, is chosen depending on what group the calculated parameters belong to. The characteristics are measured in such a way that the equations of the model describing them can be reduced to the simplest form.     

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated.     

Using the magneto-optical Kerr effect to study magnetization processes in two-dimensional magnonic crystals based on YIG thin films

The magneto-optical Kerr effect for red (628 nm) and green (532 nm) light is used to study magnetization processes in 2D magnonic crystals obtained by etching pits with the diameter D ≈ 32 μm to a depth of t ≤ 2 μm in a 16.1-μm-thick film of yttrium iron garnet (YIG). Hysteresis loops obtained in the case of the inplane crystal magnetization at 628 nm are characterized by lower saturation fields H _s and higher remanent magnetizations than those obtained at 532 nm, a result that is attributed to different absorption coefficients of the YIG film at these wavelengths. This difference between the magnetization curves reflects the fact that the magnonic-crystal surface probed with the green light makes a greater contribution to the magneto-optical Kerr effect. Therefore, the green light is more sensitive to the demagnetizing fields, which govern magnetization processes in the magnonic crystals.     

Effect of the Distribution of Manganese Ions on the Properties of Mn-Doped (Ba,Y)TiO3 PTCR Ceramics

The electrical properties and microstructure of (Ba,Y)TiO₃ PTCR ceramics were studied. The results indicate that the Mn ions increase the intergranular barrier height and produce a high-resistance layer on the grain surface. The temperature-dependent resistances of the grain bulk, surface layer, and grain boundaries, the temperature coefficient of resistance, and the magnitude of the varistor effect were assessed as a function of Mn content.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).     

Static energy reduction techniques for microprocessor caches

Microprocessor performance has been improved by increasing the capacity of on-chip caches. However, the performance gain comes at the price of static energy consumption due to subthreshold leakage current in cache memory arrays. This paper compares three techniques for reducing static energy consumption in on-chip level-1 and level-2 caches. One technique employs low-leakage transistors in the memory cell. Another technique, power supply switching, can be used to turn off memory cells and discard their contents. A third alternative is dynamic threshold modulation, which places memory cells in a standby state that preserves cell contents. In our experiments, we explore the energy and performance tradeoffs of these techniques. We also investigate the sensitivity of microprocessor performance and energy consumption to additional cache latency caused by leakage-reduction techniques.     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.