0.18μm铜金属双重镶嵌工艺中空间成像套刻精度分析

由于空间成像套刻(Overlay)技术的预算随集成电路(IC)设计规范的紧缩而吃紧,因此,Overlay测量技术准确度的重要意义也随之提高。通过对后开发(AfterDevelopDI)阶段和后蚀刻(AfterEtchFI)阶段的Overlay测量结果进行比较,研究了0.18μm设计规范下的铜金属双重镶嵌工艺过程中的Overlay准确度。在确保对同一个晶圆进行后开发(DI)阶段和后蚀刻(FI)阶段测试的条件下,我们对成品晶圆的5个工艺层进行了比较。此外,还利用CD-SEM(线宽-扫描电子显微镜)测量了某个工艺层(PolyGate)上的芯片内Overlay,并与采用分割线方法的光学Overlay测量结果进行了比较。发现对芯片内overlay的校准存在着严重的局限性,即在应用CD-SEM时缺乏合适的结构进行Overlay测量。我们还将继续为大家提供定量的比较结果,同时也会向大家推荐组合的CD-SEM测量结构,使其能够被应用到今后的光刻设计中。     

Transient thermo-reflectance measurements of the thermal conductivity and interface resistance of metallized natural and isotopically-pure silicon

The transient thermoreflectance method has been used to measure the thermal conductivity of natural silicon and isotopically-pure silicon-28 layers that are epitaxially grown on natural silicon substrates. The measurements were performed at room temperature for both a low level (10¹⁶) and a higher level (2×10¹⁹) of Boron doping of the epitaxial layers. The results indicate a gain of approximately 55% in the thermal conductivity of Si²⁸ as compared to that of natural Si, at both low and higher levels of doping, and a loss of approximately 19% for both types of silicon due to the higher level of doping.     

Underrepresented students in STEM: The transition from undergraduate to graduate programs.

We used longitudinal tracking data from Cohorts I and II of the Gates Millennium Scholars (GMS) Program to test whether this intervention program and being a STEM (science, technology, engineering, and mathematics) undergraduate major helped underrepresented students transition into STEM graduate degree programs in 2006–2007. We found that being a GMS Scholar increased the odds of being currently enrolled in a graduate program and in a STEM graduate field, regardless of whether the student was a STEM undergraduate major. We also found that STEM undergraduate majors were more likely to transition into these graduate degree programs, and that being an undergraduate STEM major was especially beneficial to GMS Scholars. These findings varied considerably across underrepresented groups. We found that undergraduate intervention programs can both retain and insert underrepresented students at the STEM graduate level, thus potentially adding needed diversity at these educational levels. (PsycINFO Database Record (c) 2011 APA, all rights reserved)     

The hot rectus abdominis muscle sign

We report a 2.5-year-old child who presented with an acute abdomen caused by the perforation of a sewing pin through her appendix that had started to penetrate the wall of the bladder.     

Monitoring of the VVER nuclear reactor internals

This paper presents a review of the published pressurized water reactor accidents caused by internal vibrations. These accidents are evaluated with respect to their impact on the safety and economy of nuclear power generation. Subsequently, criteria for a monitoring system which would allow the prevention of such accidents are proposed. Structures and some results obtained at NRI e in the course of such system development are presented as well. The results comprise experimental and computational analyses of the behaviour of the VVER-440/V-213 reactor internals and primary coolant.     

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

Improved magnetic trapped field in thin-wall YBCO single-domain samples by high-pressure oxygen annealing

Oxygen high pressure (up to 16 MPa) has been introduced in the oxygen-annealing step necessary to make the YBa₂Cu₃O_x phase superconducting (change x from 6 to about 7). It enables a displacement in the equilibrium phase diagram towards higher temperatures, which means the possibility to achieve the same final oxygen content as the one at low temperature, but with the benefit of higher diffusion rates. Initial development made on thin bars (1.5–3 mm thick) has confirmed the interest of using a high pressure of oxygen. TEM observations have shown an increase of twin density associated with higher Jc. This is in agreement with other works claiming the possibility of higher Jc by twin engineering, and more precisely by twin refinement while annealing at high temperature. We report the successful application of this process without any adjustment to so-called thin-wall single-domain samples. These samples are obtained by growing a crystal on a pellet already shaped with an array of holes. The advantage is that, as far as diffusion processes are concerned, the typical length is not anymore the diameter of the sample, but the thickness of the walls between holes. The trapped field of 16 mm diameter Y123 thin-wall single-domain samples was doubled (0.6 T vs. 0.3 T at 77 K) in a rather short annealing time (about 3 days). Microstructures as well as magneto-optical observations of plain and thin-wall samples evidenced a reduction of cracks in the thin-wall samples. Improved performances were confirmed by further characterizations performed from 77 down to 20 K using the pulse-field facilities of the LNCMP at Toulouse.