毛细管气相色谱法测定丙烯腈中丙烯醛、丙酮、乙腈的含量

丙烯腈中有机杂质丙烯醛、丙酮、乙腈是其重要指标，现在丙烯腈的国标测试方法用填充柱气相色谱法分析丙烯腈中有机杂质丙烯醛、丙酮、乙腈的含量，此法分析时间长，灵敏度低。为了及时准确提供分析数据，用毛细管气相色谱法测定丙烯腈中有机杂质的含量。     

Gamma-irradiation-induced Ag/SiO2 composite films and their optical absorption properties

Small Ag particles or clusters dispersed mesoporous SiO₂ composite films were prepared by a new method: First the matrix SiO₂ films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO₃ solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO₂ films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements.     

可控震源施工中电台数据传输不良的原因分析及排除

可控震源在施工中,常常出现各种电台干扰,导致震源数据传输不正常或震源收不到仪器发出的遥控启动信号,影响正常施工.本文介绍了各种电台干扰引起的故障现象,分析了故障产生的原因,给出了故障的排除方法.     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

分布式无线传感器网络通信协议研究

在归纳分布式无线传感器网络研究进展的基础上，给出了综合分布式无线传感器网络技术各个方面的协议体系结构，并在新的体系结构下，系统地阐述了分布式无线传感器网络通信协议研究的进展，介绍了典型的应用案例和国外相关计划的研究情况。最后，指明了这一处于发展初期的研究领域的未来发展方向。     

Phosphorus‐containing polyaryloxydiphenylsilanes with high flame retardance arising from a phosphorus–silicon synergistic effect

Polyaryloxydiphenylsilanes were prepared from phosphorus‐containing diols and diphenydichlorolsilane through solution polymerization. With a stoichiometric imbalance in feed monomers, the resulting polymers exhibited moderate melting points and good processing properties. The polymers prepared showed initial decomposition temperatures above 340 °C, excellent thermal stability, high char yields at 850 °C and very high limited oxygen index values of 56–59. The polymers' char yields and their (P + Si) contents showed linear relationships. © 2003 Society of Chemical Industry     

Combining ideal beamforming and Alamouti space-time block codes

The simplest Alamouti space-time block code is coupled with a larger number of transmit antennas via ideal beamforming to achieve higher diversity gain. It is shown that the combined system can remain both full diversity and full code rate without orthogonality loss. Simulation results show a significant performance gain over the conventional space-time block codes.     

基于子波变换的涡街流量传感器信号分析

长期以来 ,如何提取潜在噪声下的涡街流量信号一直是个问题。流体流速脉动 ,局部阻力 ,随机振动———所有这些因素都给解决这一问题带来难度。文章应用子波变换消噪理论 ,从软件滤波的角度分析了强噪声干扰下的涡街流量信号 ,并提出了单支重构计数方法。分析结果表明 ,这种方法对低流速流量计量效果很好 ,能够有效地扩展量程下限     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Image registration by "Super-curves"

We solve the 2-D affine image registration problem by curve matching and alignment. Our approach starts with a super-curve, which is formed by superimposing two affine related curves in one coordinate system. We use B-spline fusion technique to find a single B-spline approximation of the super-curve and a registration between the two curves simultaneously. This approach achieves superior accuracy and efficiency in curve matching and alignment. We then address the occlusion problem by finding partial match between the curves segmented using inflections and cusps, which are affine invariant. The combination of edge detection and curve alignment lead to accurate image registration.