基于加权系数的DTTL遥测测距符号同步算法

遥测测距是美国喷气推进实验室于2010年提出的新型测距方法,其核心思想是将测距信息插入遥测帧中下发,利用一路遥测信号同时完成遥测、测距两种功能,地面站对帧头到达时刻的估计精度直接影响测距精度。针对现有DTTL符号同步算法精度不高的问题,研究了一种基于加权系数的DTTL符号同步算法,通过对每个遥测符号首位、末位采样点进行加权处理再积分的方法,有效提高了符号同步精度,仿真进一步验证了方法的有效性,结果表明该算法在信噪比为-5dB时能达到现有算法理想条件下的性能,均方差约为0.01个遥测符号。     

用于挠性驱动的短筒型压电振子研究

面内模态压电振子是压电驱动的一个重要分支,小型的面内模态压电振子研究较少。为了拓宽面内弯曲压电振子的应用,提出了一种短筒型压电振子,可用于挠性驱动。利用ANSYS有限元软件确立了压电振子的结构尺寸、工作模态及固有频率。振子外径䥺SymbolFC@30 mm,高度12 mm,且外圈均布36个2 mm高的齿形结构,用于放大振幅。结果表明,该结构能够很好地激发出两同频正交三阶面内弯曲工作模态。实验测得振子在B₀₃工作模态下具有同频正交性且谐振频率为27 140 Hz,与仿真结果吻合。通过实验验证了压电振子用于挠性驱动的可行性。     

LDO单粒子闩锁效应及维持电流的特性研究

针对一种LDO,研究了重离子Cl、Ge辐照触发的单粒子闩锁(SEL)效应。实验结果表明,输入1.8 V时,SEL电流范围为850~950 mA;输入3.3 V时,SEL电流范围为6.2~6.4 mA。随着限制电流值的增高,退出SEL的时间逐渐增大,最终无法退出。该LDO的SEL维持电流范围为350~400 mA,可通过正常工作电流和允许的中断时间来选择合适的限制电流值。     

评价功率VDMOS器件SEB效应的畸变NPN模型

构建了一个半径为0.05μm的圆柱体,用于模拟单粒子辐射功率VDMOS器件的粒子径迹,且圆柱体内新生电子和新生空穴的数目沿圆柱体的半径方向呈高斯分布。考虑到功率VDMOS器件的SEB效应与寄生NPN具有直接关系,提出了一种畸变NPN模型,并通过合理假设,推导出功率VDMOS器件在单粒子辐射下安全漏源偏置电压的解析式。结果表明,使用解析式计算得到的SEB阈值与TCAD仿真结果吻合较好。该模型可被广泛用于功率VDMOS器件SEB效应的分析和评价,为抗辐射功率VDMOS器件的选型及评价提供了一种简单和廉价的方法。     

对角线六边形的TSV冗余结构设计

硅通孔(TSV)在制造过程中容易产生各类故障缺陷,导致3D芯片合格率降低。为了解决这一问题,提出一种新的对角线六边形冗余结构,对均匀故障的修复率保持在99%以上,对聚簇故障的修复率与路由冗余结构相近,并高于环形冗余结构。实验结果表明,与环形和路由冗余结构相比,该结构的面积开销分别减小了1.64%和72.99%,修复路径长度分别降低了39.4%和30.81%;与路由结构相比,该结构的时间开销缩短了62.55%。     

基于朗伯模型参数估计的VLC室内定位优化算法

为实现高精度室内定位,本文设计了一种可见光 通信(VLC)室内定位系统,并通过 结合优化的朗伯模型、码分多址技术(CDMA)、三边定位算法而有效提升了定位精度和系统 扩展性。首先,每个发光二极管(LED)的ID信息经过直接序列调制后加载到LED驱动电路上 ,LED发出带有自身ID信息的灯光信号。在接收端通过光电探测器(PD)接收灯光信号,并 根据扩频码的正交性恢复出ID信息及接收信号强度(RSS),以此提高信道容量并增强系统 抗干扰能力。然后,根据朗伯光源模型,由三边定位算法得出待定位点的定位估计坐标。为 进一步提高精度,引入k最近邻(KNN)思想,采集适当的指纹点并由指纹点信息对每盏灯在 定位估计坐标处的朗伯光源模型参数进行估计,由优化后的朗伯模型计算出精度更高的定位 坐标。在1m×1m×1.35 m的空间区域中,进行本VLC室内定位系统 的实验测试。结果表明,提 出的高精度VLC室内定位系统的平均定位误差降低至2cm左右,其定位精度相比于传统三边 定 位算法提升了30%。此外,该系统方案所采用基于指纹点信息优化朗 伯模型参数的方法具备良好的实用扩展性,可实现广阔的应用场景。     

Rateless coded Orthogonal Frequency Division Multiplexing system design based on intercarrier interference self‐cancelation

In this paper, we consider a rateless coded Orthogonal Frequency Division Multiplexing (OFDM) system under a quasistatic fading channel. During each transmission round, transmitter keeps transmitting to the receiver using Raptor code until the receiver feeds back an acknowledgement (ACK). On the other hand, frequency offset between the transmitter and receiver ruins the orthogonality of OFDM subcarriers and cause intercarrier interference (ICI). We resort to ICI self‐cancelation precoding to combat ICI, wherein the data symbol vectors are multiplied with some precoding matrix before transmission. To improve the system robustness, we jointly optimize the precoding matrix and the degree profile of Raptor code, with only statistical channel state information (CSI) being assumed at the transmitter. The optimization problem is formulated based on the extrinsic information transfer (EXIT) analysis of the decoding process at the receiver. The advantage of the proposed design is that the instant CSI is not required at the transmitter, which reduces the system overhead. Simulation results verify that the proposed scheme with the optimized precoding matrix and degree profile can effectively combat ICI and achieve good performance both in bit error ratio (BER) and average transmission rate.     

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled continuous enhancement of their performance during the last four decades, allowing the fabrication of more powerful electronic products (e.g., computers and phones). However, as the size of FETs currently approaches interatomic distances, a general performance stagnation is expected, and new strategies to continue the performance enhancement trend are being thoroughly investigated. Among them, the use of 2D semiconducting materials as channels in FETs has raised a lot of interest in both academia and industry. However, after 15 years of intense research on 2D materials, there remain important limitations preventing their integration in solid‐state microelectronic devices. In this work, the main methods developed to fabricate FETs with 2D semiconducting channels are presented, and their scalability and compatibility with the requirements imposed by the semiconductor industry are discussed. The key factors that determine the performance of FETs with 2D semiconducting channels are carefully analyzed, and some recommendations to engineer them are proposed. This report presents a pathway for the integration of 2D semiconducting materials in FETs, and therefore, it may become a useful guide for materials scientists and engineers working in this field.     

一种电场调制载流子存储槽栅双极型晶体管

提出了一种性能优良的电场调制载流子存储槽栅双极型晶体管(CSTBT)。结合电场调制原理,在器件的载流子存储(CS)层引入P掺杂条,改善器件栅极下方氧化硅拐角处的电场分布,防止器件提前发生雪崩击穿,提高了器件的击穿电压。器件处于关断状态时,内部大量的空穴载流子通过CS层中未完全耗尽的P掺杂条到达发射极,抑制了CS层阻挡空穴的作用,有效提高了器件的关断速度。与传统CSTBT器件相比,改进器件的击穿电压值提高了379 V,关断时间缩短了19.1%,器件性能大幅提高。     

利用EBSD技术研究应变诱导相变过程

目前,日本,韩国和中国都在开展超级钢研究。主要目标之一是实现铁素体的超细化,进而使钢的强度和使用寿命提高一倍。一个行之有效的途径是通过应变诱导铁素体相变,即使奥氏体过冷到尽可能低的温度,在稍高于Ar3对奥氏体进行高速大应变。超细化的主要原因被认为是奥氏体在大应变下自由能大幅度提高,从而使铁素体获得大的相变驱动力,特别是形核率。近期对应变诱导相变过程的组织变化观察表明,转变过程中不仅发生了相变,还会出现铁素体的动态再结晶。此外,在一定条件下还在转变后期出现渗碳体,即珠光体转变;对纯净的碳素钢,当形变温度在A3附近…