一种减少锌渣生成的镀锌添加剂

钢丝热镀锌过程中易产生大量锌渣。为降低锌损耗,研制了一种镀锌添加剂。该添加剂可抑制亚铁离子的产生,从而减少锌渣的生成     

Simultaneous CO2 and H2O Activation via Integrated Cu Single Atom and N Vacancy Dual-Site for Enhanced CO Photo-Production

Photocatalytic conversion of CO₂ into fuels using pure water as the proton source is of immense potential in simultaneously addressing the climate-change crisis and realizing a carbon-neutral economy. Single-atom photocatalysts with tunable local atomic configurations and unique electronic properties have exhibited outstanding catalytic performance in the past decade. However, given their single-site features they are usually only amenable to activations involving single molecules. For CO₂ photoreduction entailing complex activation and dissociation process, designing multiple active sites on a photocatalyst for both CO₂ reduction and H₂O dissociation simultaneously is still a daunting challenge. Herein, it is precisely construct Cu single-atom centers and two-coordinated N vacancies as dual active sites on CN (Cu₁/N_2CV-CN). Experimental and theoretical results show that Cu single-atom centers promote CO₂ chemisorption and activation via accumulating photogenerated electrons, and the N_2CV sites enhance the dissociation of H₂O, thereby facilitating the conversion from COO* to COOH*. Benefiting from the dual-functional sites, the Cu₁/N_2CV-CN exhibits a high selectivity (98.50%) and decent CO production rate of 11.12 µmol g⁻¹ h⁻¹. An ingenious atomic-level design provides a platform for precisely integrating the modified catalyst with the deterministic identification of the electronic property during CO₂ photoreduction process.     

Study and formation of 2D microstructures of sapphire by focused ion beam milling

Dry etching of C-plane sapphire wafer has been studied using Ga⁺ focused ion beam milling (FIBM). Due to a much lower milling rate of sapphire compared to GaN, it has been proven that gas-assisted FIBM (GAFIBM) is a necessity. Furthermore, it needs to be determined whether XeF₂- or I₂-GAFIBM can improve the technique. We found that XeF₂-GAFIBM gave the highest milling rate. The obtained enhancement factor of the XeF₂-GAFIBM milling rate compared to FIBM rate varied from 2.3 to 1.2 for the ion beam current in the range 20 pA-1 nA. A favorable milling rate selectivity of sapphire to nickel film of about 1.5 was obtained by XeF₂-GAFIBM at 350 pA. We have successfully fabricated a variety of 2D sapphire-based submicron pillar or hole arrays in regular crystals, quasicrystals and aperiodic symmetries. The nearest neighbor distance was down to 230 nm. The depth achieved was deeper than 400 nm. The air filling factor ranged from 12% to 60%. These sapphire-based 2D microstructures were applied on flip-chip GaN-based light emitting diodes (LEDs) and more than 40% improvement in light extraction was obtained.     

Feasibility study of the application of voltage contrast to printed circuit board

Voltage contrast (VC) has been a powerful tool for the failure analysis of integrated circuits and multichip module. As the packing density of printed circuit board (PCB) is increasing, conventional failure analysis methods to detect open or short circuit in PCBs are no longer adequate, and voltage contrast method could be a method for this purpose. However, unlike the cases of integrated circuits and multichip module, there are many areas in PCB that will produce serious charging effect when examine under the scanning electron microscope. One of the areas is the presence of solder mask on PCB.This work examines the feasibility of using voltage contrast for PCB failure analysis. Specially designed PCB is used for experimentation, and it is found that positive bias on one track and zero bias on another copper track provide a better image contrast as compared to negative and zero biases on the tracks. Also, the variation of the image contrast with different spacing between inter copper tracks has studied. It is found that the variation depends on the presence of solder mask and its location. The variation can be very different for negative bias case as compared to the positive bias case.Finite element analysis is also performed to explain the experimental observations. All the observations can be well explained by the charging effect of the solder masks. The charging effect of solder mask is indeed very significant in affecting the image contrast, and it could reduce the contrast to almost zero in some cases.     

Robust beamforming in cognitive radio

This letter considers the multi-antenna cognitive radio (CR) network, which has a single secondary user (SU) and coexists with a primary network of multiple users. Our objective is to maximize the service probability of the SU, subject to the interference constraints on the primary users (PUs) in the form of probability. Exploiting imperfect channel state information (CSI), with its error modeled by added Gaussian noise, we address the optimization for the beamforming weights at the secondary transmitter. In particular, this letter devises an iterative algorithm that can efficiently obtain the robust optimal beamforming solution. For the case with one PU, we show that a much simpler algorithm based on a closed-form solution for the antenna weights of a given power can be presented. Numerical results reveal that the optimal solution for the constructed problem provides an effective means to tradeoff the performance between the PUs and the SU, bridging the non-robust and worstcase based systems.     

Robust Fabrication of Nonstick,Noncorrosive, Conductive Graphene‐Coated Liquid Metal Droplets for Droplet‐Based,Floating Electrodes

Nontoxic liquid metals (conductive materials in a liquid state at room temperature) are an emerging class of materials for applications ranging from soft electronics and robotics to medical therapy and energy devices. Their sticky and corrosive properties, however, are becoming more of a critical concern for circuits and devices containing other metals as these are easily destroyed or contaminated by the liquid metals. Herein, a feasible method for fabricating highly conductive graphene‐coated liquid metal (GLM) droplets is reported and their application as nonstick, noncorrosive, movable, soft contacts for electrical circuits is demonstrated. The as‐prepared GLM droplets consist of a liquid‐phase soft core of liquid metal and a slippery outer layer of graphene sheets. These structures address the issue of simultaneous control of the wettability and conductivity of a soft electronic contact by combining extraordinary properties, i.e., nonstick, noncorrosive, yet exhibiting high electronic conductivity while in contact with metal substrates, e.g., Au, Cu, Ag, and Ni. As proof‐of‐concept, the as‐prepared GLM droplets are demonstrated as floating electrodes for movable, recyclable electronic soft contacts in electrical circuits.     

Vanadium Doping Enhanced Electrochemical Performance of Molybdenum Oxide in Lithium‐Ion Batteries

Molybdenum trioxide (MoO₃) suffers from poor conductivity, a low rate capability, and unsatisfactory cycling stability in lithium‐ion batteries. The aliovalent ion doping may present an effective way to improve the electrochemical performances of MoO₃. Here, it is shown, by first‐principle calculations, that doping MoO₃ with V by 12.5% can modulate significantly electronic structure and provide a small diffusion barrier for enhancing the electrochemical performance of MoO₃. The ultralong Mo_0.88V_0.12O_2.94 nanostructures, which retain the h‐MoO₃ structure and present an exceptionally high conductivity and fast ionic diffusion due to the substitution of V, facilitating lithiation/delithiation behavior, and induce a fine nanosized structure with a reduced volume change are prepared. As a result, the stress and strain are alleviated during the Li‐ion intercalation/deintercalation processes, improving the cycling stability and rate capability. Such a large improvement in the electrochemical properties can be ascribed to the stabilizing effect of V, the small migration energy barrier, and short diffusion path, which arise from the introduction of V into MoO₃. The unique engineering strategy and facile synthesis route open up a new avenue in modifying and developing other species of electrode materials.     

Magnetic field spatial Fourier analysis: A new opportunity for high resolution current localization

Magnetic microscopy has proven its usefulness throughout the years. It allows current localization with a certain degree of precision by using an inversion algorithm to invert the Biot–Savart law. The goal is to obtain the current distribution once the magnetic field is given. However, in order to obtain a stable solution, the magnetic data is severely low-pass filtered in the spatial Fourier domain, and some important information is lost. In this paper, the contribution given by the different spatial frequencies was studied: it was demonstrated how this information can be used to obtain additional information regarding the position of the currents. A comparative study between the theoretical approach and the application to the measurements is also shown.     

一种512 Kbit同步高速SRAM的设计

设计了一种深亚微米 ,单片集成的 5 1 2 K( 1 6K× 32位 )高速静态存储器 ( SRAM)。该存储器可以作为IP核集成在片上系统中。存储器采用六管 CMOS存储单元、锁存器型敏感放大器和高速译码电路 ,以期达到最快的存取时间。该存储器用 0 .2 5μm五层金属单层多晶 N阱 CMOS工艺实现 ,芯片大小为 4.8mm× 3.8mm。测试结果表明 ,在 1 0 MHz的工作频率下 ,存储器的存取时间为 8ns,工作电流 7m A。     

Markovian场中四能级系统的窄带五阶非线性效应

本文采用高阶相干函数理论研究了四能级系统在Markovian场下的窄带五阶非线性效应（NFPBFMS）。我们得到了混沌场模型、相散场模型及实高斯场模型下窄带拍频信号强度随时间的变化规律，并讨论了三种模型对测量原子能级分裂精度的影响。