Investigation of Mechanical and Electrical Characteristics for Cracked Conductive Particle in Anisotropic Conductive Adhesive (ACA) Assembly

In an anisotropic conductive adhesive (ACA) assembly, the electrical conduction is usually achieved with the conductive particles between the bumps of integrated circuit (IC) and corresponding conductive tracks on the glass substrate. Fully understanding of the mechanical and electrical characteristics of ACA particles can help to optimize the assembly process and improve the reliability of ACA interconnection. Most conductive particles used in the ACA assembly are with cracks in the metal coating of the particles after the ACA bonding. This paper introduced the fracture analysis by applying the cohesive elements in the numerical model of the nickel-coated polymer particle and further simulating the cracks initiation and propagation in the nickel coating during the ACA bonding. The simulation results showed that the stress distribution on the nickel-coated particle with cracks was significantly different from that on the nickel-coated particle without crack, indicating that the stress analysis by taking the crack into consideration is very important for the reliability assessment of the ACA interconnection. The stress analysis of cohesive elements indicated that the cracks initiated at the central area of the nickel coating and propagated to the polar area. Furthermore, by the introduction of a new parameter of the virtual resistance, a mathematical model was established to describe the electrical characteristics of the nickel-coated particle with cracks. The particle resistance of the nickel-coated particle with cracks was found to be much higher than that of the particle without crack in the optimized bonding pressure range, indicating that it is necessary to take the crack into consideration for the particle conduction analysis as well. Therefore, the fracture analysis on the conductive particle by taking the crack into consideration could accurately evaluate the reliability of ACA interconnection and avoid serious reliability issues.     

镁钴铝类水滑石催化合成安息香甲醚

采用共沉淀法制备了镁钴铝类水滑石化合物(MgCoAl-HTLcs),并用 X 射线衍射、扫描电子显微镜、NH_3程序升温脱附等方法对 MgCoAl-HTLcs 进行了表征,并以 MgCoAl-HTLcs 为催化剂催化苯甲醛与甲醇反应合成安息香甲醚,研究了n(Mg):n(Co):n(Al)、催化剂用量、原料配比、反应温度、反应时间对合成反应的影响。表征结果显示,MgCoAl-HTLcs 的晶相完整,表面主要为弱酸、弱碱性。催化合成安息香甲醚的适宜条件为:MgCoAl-HTLcs 催化剂用量0.10 g(约为原料总质量的0.23%),n(Mg):n(Co):n(Al)=0.4:1.6:1.0,V(苯甲醛):V(甲醇)=3:50,反应温度50℃,反应时间150 min。在此条件下,苯甲醛的平衡转化率达77.49%,安息香甲醚选择性接近100%。为洁净合成安息香甲醚开辟了一条新的途径。     

Cr-Mo solid solutions forced by high-energy ball milling

Mixtures of Cr and Mo elemental powders, with the nominal compositions Cr₂₅Mo₇₅, Cr₅₀Mo₅₀, and Cr₇₅Mo₂₅, are processed by high-energy ball milling at ambient temperature. Milling is observed to force the mixing of the immiscible bcc elements Cr and Mo into solid solutions. The lattice parameter of these solid solutions, measured by X-ray diffraction (XRD), displays the expected positive deviation from Vegard’s law. These deviations are compared to the ones predicted by Eshelby’s inclusion model for dilute alloys. The conventional Williamson-Hall approach is shown to fail to determine the grain size in as-milled samples, probably due to the high density of dislocations. Annealing at 700 °C for 10 hours under argon leads to a large reduction in structural defect density, without inducing any significant decomposition. The mixing measured in Cr-Mo is discussed in the broader context of the mechanical mixing forced by ball milling in moderately immiscible systems.     

分置式牛津型斯特林制冷机的数值分析与实验验证

对分置式牛津型斯特林制冷机进行了数值计算 ,介绍了计算模型考虑到的众多不可逆因素。通过对计算结果与实验结果的对比 ,验证了本文数值计算的准确性 ,说明本文计算模型与数值处理方法是切实可行的     

IPv6和基于IPv6的网络设计

对IPv6协议的主要内容进行了简要介绍,并针对IPv6的特点对基于IPv6的网络设计进行了探讨。     

Parallel multilevel fast multipole method for solving large-scale problems

The Multilevel Fast Multipole Method (FMM) is a well-established method and can be applied to solve electromagnetic (EM) scattering problems. Compared with other traditional methods, it requires less computational time and memory. However, constrained by a single processor's speed and memory limitations, the problem size that can be solved by serial implementation is still relatively small. For a million-unknown target, the computational time on a single processor is intolerable, and memory could be easily exhausted. Parallel-computing technology, which can utilize multiprocessors, provides an efficient way to solve electrically large-scale EM problems. This paper will focus on discussing the parallel methodologies applied to a multilevel FMM code, as well as demonstrating the computational efficiency of the parallel approach.     

Grain refinement of Al-7Si alloys and the efficiency assessment by recognition of cooling curves

Under sand cup solidification condition, the influence of Ti, B concentration, and holding time on the grain size of a high-purity Al-7Si alloy has been systematically studied. It is found that the grain size decreases rapidly at lower Ti or B additions, and is almost constant at the higher concentrations. For Al-3B refined Al-7Si alloys, the grain size increases at the initial period of holding time, and then rapidly becomes independent of holding time; while for Al-7Si alloys refined with Al-5Ti-1B, the grain size increases with holding time throughout. To evaluate the refinement efficiency, a new method named “intelligent evaluating of melt quality by pattern recognition of thermal analysis cooling curves” has also been introduced in this article. The results show that comparing the cooling curve of the evaluated melt with those in a database to find the most similar one to it can precisely assess the grain refinement efficiency of the measured Al-7Si alloy. In addition, the influence of Ti, B addition levels, and pouring temperatures on some characteristic parameters of cooling curve has also been discussed.     

10?30 GHz monolithic GaAs travelling-wave divider/combiner

A four-way monolithic GaAs travelling-wave power divider/combiner has been designed, fabricated and evaluated. With a design centre frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.