The Scalable Coherent Interface and related standards projects

The Scalable Coherent Interface (SCI) (IEEE P1596), which provides bus services by transmitting packets on a collection of point-to-point unidirectional links, is described. Its protocols support cache coherence in a distributed shared-memory multiprocessor model, with message passing, I/O, and LAN communication taking place over fiber optic or wire links. Several ongoing SCI-related projects that apply the SCI technology to new areas or extend it to more difficult problems are also described. Future plans are sketched     

Investigation and simulation of foam aluminum obtained from secondary aluminum raw materials by mechanical doping

The structure and phase composition of the samples of foam aluminum based on the AMg6 alloy (Al-6%Mg-0.7%Mn) obtained in a high-energy planetary mill are investigated. Mechanical doping provides high dispersity and homogeneity of all structural components including particles of the foam agent TiH₂, which allows one to obtain foam aluminum with a pore size of 1–5 mm at a density of 1.20–0.80 g/cm³. Mechanical properties of foam aluminum were estimated based on the results of compression tests. Based on preliminary investigations, an imitation model of foam formation is suggested that well describes the process of foam formation.     

Fast algorithms for single frequency estimation

In this paper, some new estimators of the frequency of a single complex sinusoid are presented. The rotate-add-decimate (RAD) method of Crozier is first refined to more closely approach the Cramer-Rao Bound (CRB). An additional modification yields an unbiased estimator (ERAD) that essentially achieves the CRB above a signal-to-noise ratio (SNR) threshold comparable to that of RAD. In addition, this estimator is proven to achieve the CRB for high SNR. The ERAD method requires approximately 2N complex multiply-adds and log/sub 2/N arctangents. A modified ERAD (MERAD) is proposed that matches the SNR threshold and computational complexity of the RAD method (approximately 3N complex multiply-adds and log/sub 2/N arctangents) but achieves the CRB for high SNR.     

Low-threshold single-quantum-well InGaAs/GaAs lasers grown bymetal-organic chemical vapor deposition on structure substrates

Low-threshold current (as low as 3.0 mA) and high-external efficiency (≈88%) InGaAs/GaAs lasers emitting at 1 μm under a stable fundamental transverse mode were obtained by using the temperature engineered growth technique for the growth on prepatterned substrates