Seasat over-land scatterometer data. I. Global overview of theKu-band backscatterer coefficients

Statistics on the backscatter coefficient σ⁰ from the Ku-band Seasat-A Satellite Scatterometer (SASS) collected over the world's land surfaces are presented. This spaceborne scatterometer provided data on σ⁰ between latitude 80° S and 80° N at incidence angles up to 70°. The global statistics of vertical (V) and horizontal (H) polarization backscatter coefficients for 10° bands in latitude are presented for incidence angles between 20° and 70° and compared with the Skylab and ground spectrometer results. Global images of the time-averaged V polarization σ⁰ at a 45° incidence angle and its dependence on the incidence angle are presented and compared to a generalized map of the terrain type. Global images of the differences between the V an H polarization backscatter coefficients are presented and discussed. The most inhomogeneous region, which contains the deserts of North Africa and the Arabian Peninsula, is studied in greater detail and compared with the terrain type     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

CONTOP(R)--钢铁工业和报废汽车处理业的经济回收方案

1 前言 CONTOP~R工艺最初是由德国科隆的KHDHumboldt Wedag AG公司针对有色金属工业而开发的。两台迄今为止最大的CONTOP~R熔炼旋风炉建于美国德克萨斯的ASARCO公司,每台能力为32t/h铜精矿混和料。 1998年,奥钢联工程技术公司(VAI)获得了     

Microwave signal generation using an optical self-heterodyne technique

A new technique for mixing optical waves to generate microwave-frequency signals using an injection laser diode and a fibre-optic interferometer is reported. A beat signal is produced by interfering light from the laser with light from the same laser emitted earlier at a different frequency. The interferometer consists of an evanescent-field fibre coupler joined to a length of single-mode optical fibre. The laser is tuned by pulsed or bipolar current waveforms superimposed on a DC bias current. Feedback from an external cavity stabilises the laser frequency and reduces its linewidth. Efficient mixing at difference frequencies from 250 MHz to 2 GHz is obtained, with spectral widths of less than 1% of the centre frequency.     

Pulse-stream VLSI neural networks mixing analog and digitaltechniques

The pulse-stream technique, which represents neural states as sequences of pulses, is reviewed. Several general issues are raised, and generic methods appraised, for pulsed encoding, arithmetic, and intercommunication schemes. Two contrasting synapse designs are presented and compared. The first is based on a fully analog computational form in which the only digital component is the signaling mechanism itself-asynchronous, pulse-rate encoded digital voltage pulses. In this circuit, multiplication occurs in the voltage/current domain. The second design uses more conventional digital memory for weight storage, with synapse circuits based on pulse stretching. Integrated circuits implementing up to 15000 analog, fully programmable synaptic connections are described. A demonstrator project is described in which a small robot localization network is implemented using asynchronous, analog, pulse-stream devices.     

Measurement of the delayed-neutron yields in the fission of233U,236U,237Np,240Pu,and241Pu by neutrons from the spectrum of a fast reactor

Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 100–103, February, 1989.     

A mixed finite element model for the elastic contact problem

The static elastic contact problem is approached using Lagrange multipliers, leading to a mixed finite element problem. A non-linear friction law is introduced explicitly and the non-local character of the friction phenomena is implicitly assumed. In order to avoid stress oscillations near singular points, a perturbed Lagrangian functional is considered. The algorithms herein proposed do not impose nodal dependencies over the contact surfaces, allowing for the independent discretization of both bodies. The method is able to model simultaneous contact over different regions of any geometrical shape. Computer code, examples and results presented here are restricted to axisymmetrical and bidimensional cases.     

Failure analysis of aluminum cable steel reinforced (ACSR) conductor of the transmission line crossing the Paraná River

The failure of the conductor of the 460 kV overhead transmission line located along the crossing of the Paraná River was investigated. As a result of this failure, a blackout took place in the southern states of Brazil in January of 2002, reaching approximately 67 million inhabitants. Investigation of the external aluminium layer of the ACSR conductor near the fracture showed typical static deformation marks and dynamic fretting wear tangential marks, both associated with the presence of Al₂O₃ debris. Additionally, encrusted silicon particles were observed on the external surface of the strands. The internal Al layer showed elliptical deformation marks also associated with Al₂O₃ debris. Both Al₂O₃ and Si particles are efficient abrasive material, which associated with slight relative motion of metallic surfaces (clamp/strand and strand/strand) can promote fretting wear. Two types of fracture surface of the Al strands were identified: 45° and quasi-normal surfaces, the former being the predominant type. Delamination and particle detachment were the mechanisms of superficial degradation observed on the Al strands, indicating that the rupture of the strands occurred under a gross slip fretting regime induced by sub-conductor oscillation. Inspection of the internal surface of as-cast Al–10%Si spacer clamps revealed different stages of intense circumferential wear caused by the preferential cracking and particle detachment of the eutectic constituent of the as-cast microstructure. This intense wear reduces the clamping contact pressure, which allows higher displacement amplitude and leads to the critical fretting regime. Finally, a few suggestions are discussed to minimise the occurrence of future failures.