CRTSⅡ型板式无砟轨道滑动层性能试验研究

近年来,我国在京津、京沪等高速铁路建设工程中大量采用了CRTSⅡ型板式无砟轨道体系,该体系中的滑动层结构国内外已有经验较少,缺少相应技术标准.研究制作了1∶2缩尺滑动层结构整体模型及试验工装,进行了两组室内试验;针对滑动层性能进行了系统、深入的研究.试验结果表明:经历300万次磨耗后滑动层的磨损面积小于5%;在各个磨耗阶段下测定的摩擦系数均小于0.35;滑动层摩擦系数随着界面温度的升高而增加、随着界面含水率的增大而降低.     

昆明新机场航站楼超大面积双曲面金属屋面施工技术

昆明新机场航站楼工程为大跨度、超大面积、双曲面金属屋面,施工技术复杂.其超长金属屋面板的加工、运输及吊装困难,屋面三维空间定位放线繁杂,屋面变形控制要求高.针对工程难点采取一系列措施,介绍了氟碳涂层铝镁锰合金板金属屋面各构造层施工技术,取得优异效果.     

PBL剪力连接件群传力机理研究Ⅱ:极限承载力

以PBL剪力连接件群传力机理试验模型为研究对象,采用所建立的荷载-滑移变形协调理论模型及其求解方法对PBL剪力连接件群的传力机理及其极限承载力进行研究。通过与试验结果及三维非线性仿真分析结果的对比进一步验证求解方法的有效性。对PBL剪力连接件群传力机理及其极限承载力的系统研究表明:其荷载传递过程实质上是外荷载作用下钢构件、混凝土构件及各层PBL剪力连接件的刚度、变形及荷载的协调过程,三者耦合影响并共同决定剪力连接件群的传力机理及其极限承载力。鉴于PBL剪力连接件群传力机理及其极限承载力的复杂性,就钢构件、混凝土构件以及PBL剪力连接件等关键影响因素及其效应进行研究,在此基础上对于PBL剪力连接件群的设计理念和设计方法进行探讨,指出PBL剪力连接件群设计需注意的问题及需考虑的主要因素。     

辽宁南芬铁矿地质特征及找矿前景

在前人研究的基础上,结合实际矿床地质调研,分析了南芬铁矿床的地质特征和成矿背景,探讨了矿床的成因类型及找矿标志。通过磁法测量和钻探验证,认为该铁矿床矿资源潜力较大,实现铁矿找矿突破具备完全的条件。     

基于虚拟仪器的微震实时监测系统

煤矿中发生的岩爆、煤和瓦斯突出等地质灾害与岩体中的微震现象有着必然的联系,通过监测地下微震信号可以确定地下岩石破裂的范围和程度,为矿山的地下安全监测提供有力的证据。以往基于DSP或其他单片机的微震系统,其资源的有限性很难达到理想的采集效果,并且难以完成先进算法的实现;而本系统实现了对多路微震信号采集及先进的小波变换处理算法,充分发挥了虚拟仪器的优势。该系统的监测结果与实际矿震十分吻合,得到的定位结果小于规定的误差上限,很好地完成了对微震的实时监测及分析。     

斜拉索病害及其养护维修

在国内,斜拉桥以其跨越能力和独特的美观效果在近二十年内得到长足的发展和广泛的应用。然而,由于斜拉桥结构体系本身的复杂性、材料本身的缺陷,施工技术、方法、质量问题,环境腐蚀,车辆超载及运营期养护管理不到位等因素,使得已建成的斜拉桥的拉索或多或少地出现各种病害。这不仅影响了桥梁的使用性能和正常运营,甚至会降低桥梁主体结构安全余地,给桥梁带来安全性方面的隐患和耐久性方面的缺陷。本文先对我国现有的斜拉桥拉索病害情况进行较详细的调查分析,归纳总结斜拉桥拉索的使用现状及主要病害如PE护套开裂,索丝腐蚀断裂,锚具腐蚀、疲劳开裂等,并对病害的产生原因进行分析。在此基础上,提出相应的包括设计、建设中的建议,运营和管理阶段的养护维修策略和措施。     

Optimization of Solubility,Film Morphology and Photodetector Performance by Molecular Side‐Chain Engineering of Low‐Bandgap Thienothiadiazole‐Based Polymers

A series of donor–acceptor (D‐A) type low‐bandgap polymers containing the terthiophene and thieno[3,4‐b]thiadiazole units in the main chain but different numbers of identical side chains are designed and synthesized in order to study the effect of side chain on the polymer properties and optimize the performance of polymer photodetectors. Variation in the side chain content can influence the polymer solubility, molecular packing, and film morphology, which in turn affects the photodetector performance, particularly with regard to the photoresponsivity and dark current. X‐ray diffraction patterns indicate that molecular ordering increases with more side chains. Atomic force microscopy shows that appropriate morphology of the active layer in the polymer photodetector is necessary for high photocurrent and low dark current. Using BCP as a hole blocking layer (10 nm), the photodetector based on P4 exhibits the optimized performance with specific detectivity of 1.4 × 10¹² Jones at 800 nm, which is among the best reported values for polymer photodetectors and even comparable to that of a silicon photodetector.     

Towards High Efficiency and Low Roll‐Off Orange Electrophosphorescent Devices by Fine Tuning Singlet and Triplet Energies of Bipolar Hosts Based on Indolocarbazole/1, 3, 5‐Triazine Hybrids

Orange‐emitting phosphorescent organic light‐emitting diodes (PHOLEDs) are drawing more and more attention; however, high‐performance hosts designed for orange PHOLEDs are rare. Here, four indolocarbazole/1, 3, 5‐triazine hybrids are synthesized to optimize the singlet and triplet energies, as well as transporting properties, for ideal orange PHOLEDs. By introducing moieties with different electronegativity, a graded reduction of the singlet and triplet energies is achieved, resulting in minimum injection barrier and minimum energy loss. Besides, the charge transporting abilities are also tuned to be balanced on the basis of the bipolar features of those materials. The optimized orange PHOLED shows a maximum external quantum efficiency (EQE) of 24.5% and a power efficiency of 64 lm W^–1, both of which are among the best values for orange PHOLEDs. What is more, the efficiency roll‐off is extremely small, with an EQE of 24.4% at 1000 cd m^–2 and 23.8% at 10 000 cd m^–2, respectively, which is the lowest efficiency roll‐off for orange PHOLEDs to date, resulting in the highest EQE for orange PHOLEDs when the luminance is above 1000 cd m^–2. Besides the balanced charges, the small roll‐off is also attributed to the wide recombination zone resulting from the bipolar features of the hosts.     

钕铁硼取向成型压机的自动化改造

我国是钕铁硼资源和生产的大国,但是生产设备相对比较落后,尤其是压型环节自动化和信息化程度很低。国际上有全自动压机,但是自动化的程度没有本项目全面,且价格昂贵,而且不太适合国内的生产工艺和生产状况。因此,从降低人工劳动强度、减员增效、促进企业安全生产、节能降耗、提升产品质量以及提升企业效率、管理和信息化水平的角度看,钕铁硼取向成型压机的自动化改造势在必行。     

基于90nm CMOS工艺的2GS/s 8-bit 折叠插值ADC的设计*

本文基于90nm CMOS工艺设计了一个单通道 2GSPS, 8-bit 折叠插值模数转换器。本设计采用折叠级联结构,通过在折叠电路间增加级间采样保持器的方法增加量化时间。电路中采用了数字前台辅助校正技术以提高信号的线性度。后仿结果表明,在奈奎斯特采样频率,该ADC的微分非线性DNL<±0.3LSB,积分非线性INL<±0.25LSB,有效位数达到7.338比特。包括焊盘在内的整体芯片面积为880×880 μm2。电路在1.2V 电源电压下功耗为210mW.