基于B/S模式的高校仪器设备管理系统的设计

根据高校仪器设备管理的特点和存在的问题,介绍了一种基于B/S模式的高校仪器设备管理系统.提出了系统的实现方法,描述了系统的主要技术、结构、功能和特点.     

金属铕制备工艺的研究

本文采用正交实验的方法,研究了金属铕的制备工艺条件。实验结果表明,还原－蒸馏温度１１００℃,还原剂过量系数０．３,保温时间１．５小时,金属铕的纯度大于９９．９％,直收率大于９０％     

Formation cross sections of nuclei with (n,2n) reactions

Ｆｏｒｍａｔｉｏｎｃｒｏｓｓｅｃｔｉｏｎｓｏｆｎｕｃｌｅｉｗｉｔｈ（ｎ，２ｎ）ｒｅａｃｔｉｏｎｓＣｈｅｎＸｕｅＳｈｉ，ＸｉｅＫｕａｎＺｈｏｎｇ，ＺｈｏｕＳｈｅｎｇＭｏ，ＹａｎＱｉｎｇＱｕａｎ（ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＮｕｃｌｅ...     

Nitrogen utilization and transformation in red soil fertilized with urea and ryegrass

The influence of fertilization with urea and ryegrass on nitrogen utilization and transformation in red soil has been studied by using ^15N tracer method.When urea and ryegrass were applied alone or in combination,the percentage of N uptaken by ryegrass from labelled urea was 3 and 1.7 times that from labelled ryegrass for the application rate of 200mgN.kg^-1 and 100mgN.kg^-1,respectively;combining application of ryegrass and ureareduced uptake of urea N and increased uptake of ryegrass N by ryegrass plant,but the percentage of N residued in soil increased for urea and decreased for ryegrass.when urea and ryegrass were applied alone,the percentage of N residued in soil from labelled ryegrass was more than 69% while that from labelled urea was less than 25%,and much more ryegrass N was incorporated into humus than urea N.     

水产品加工废水深度处理的试验

进行了用"生物接触氧化-微滤膜"组合工艺对水产品加工废水深度处理的试验研究.试验结果表明:在进水COD约900~1 200 ms/L,水力停留时间>16 h的情况下,平均出水COD<50 ms/t,达到再生水杂用水质标准.同时,研究探讨了处理过程中膜组件的污染及清洗问题,为实际工程中膜的运行提供了必要的参考.     

PECVD SiN 应力特性的研究

用自制的激光束偏转法测量衬底形变弯曲系统,测量了等离子增强化学汽相淀积(PECVD)SiN 膜的应力,反应气体为硅烷和氮气,结果表明:SiN 的应力为压应力,介于1～3×10~9N/m~2,应力的大小依赖工艺条件,如淀积温度、气体组分等,SiN 的本征应力也是压应力,数值为1.1×10~9N/m~2,最后,建立了用于解释本征应力的定性模型——等效晶粒模型,成功地说明了 SiN 膜的应力形成。     

k分Cantor集的Hausdorff测度的一种计算

以比较初等的方法重新证明了著名的Ｃａｎｔｏｒ三分集的Ｈａｓｄｏｒｒｆｆ维数为ｓ＝ｌｏｇ２／ｌｏｇ３，Ｈａｕｓｄｏｒｆｆｃ测度为１，并对直线上类似的一类构造集推广了此方法。     

基于函数插值的柯氏质量流量计信号处理方法

对基于离散傅里叶变换(DFT)信号处理方式的柯氏质量流量计来说,影响其精度的关键问题是如何实现信号的整周期采样。提出了一种全新的方法,用采样率固定不变的采样数据,通过软件实时地确定信号的频率并且实现信号整周期重新采样。实验结果表明该方法在求取相位差时具有极高的精度。     

Rapid growth of angle-confined large-domain graphene bicrystals

In the chemical vapor deposition growth of large-area graphene polycrystalline thin films,the coalescence of randomly oriented graphene domains results in a high density of uncertain grain boundaries (GBs).The structures and properties of various GBs are highly dependent on the misorientation angles between the graphene domains,which can significantly affect the performance of the graphene films and impede their industrial applications.Graphene bicrystals with a specific type of GB can be synthesized via the controllable growth of graphene domains with a predefined lattice orientation.Although the bicrystal has been widely investigated for traditional bulk materials,no successful synthesis strategy has been presented for growing two-dimensional graphene bicrystals.In this study, we demonstrate a simple approach for growing well-aligned large-domain graphene bicrystals with a confined tilt angle of 30° on a facilely recrystallized single-crystal Cu (100) substrate.Control of the density of the GBs with a misorientation angle of 30° was realized via the controllable rapid growth of subcentimeter graphene domains with the assistance of a cooperative catalytic surface-passivation treatment.The large-area production of graphene bicrystals consisting of the sole specific GBs with a tunable density provides a new material platform for fundamental studies and practical applications.