喷气织机生产高密光边织物

采用无针折边装置在喷气织机上织造高密光边机织物,介绍了生产过程,重点阐述了光边织物的设计原则、织造工艺,并对生产中存在的起圈、边双纬、右边纬缩、纬停(误停)等问题进行了分析,提出了解决措施。     

Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS) technology to the sub-21-nm technology node is facing great challenges. Innovative technologies such as metal gate/high-k dielectric integration, source/drain engineering, mobility enhancement technology, new device architectures, and enhanced quasiballistic transport channels serve as possible solutions for nanoscaled CMOS. Among them, mobility enhancement technology is one of the most promising solutions for improving device performance. Technologies such as global and process-induced strain technology, hybrid-orientation channels, and new high-mobility channels are thoroughly discussed from the perspective of technological innovation and achievement. Uniaxial strain is superior to biaxial strain in extending metal–oxide–semiconductor field-effect transistor (MOSFET) scaling for various reasons. Typical uniaxial technologies, such as embedded or raised SiGe or SiC source/drains, Ge pre-amorphization source/drain extension technology, the stress memorization technique (SMT), and tensile or comprehensive capping layers, stress liners, and contact etch-stop layers (CESLs) are discussed in detail. The initial integration of these technologies and the associated reliability issues are also addressed. The hybrid-orientation channel is challenging due to the complicated process flow and the generation of defects. Applying new high-mobility channels is an attractive method for increasing carrier mobility; however, it is also challenging due to the introduction of new material systems. New processes with new substrates either based on hybrid orientation or composed of group III–V semiconductors must be simplified, and costs should be reduced. Different mobility enhancement technologies will have to be combined to boost device performance, but they must be compatible with each other. The high mobility offered by mobility enhancement technologies makes these technologies promising and an active area of device research down to the 21-nm technology node and beyond.     

SiO2在真空低价氟化法炼铝过程的分布

热力学研究得出:当系统残余压力为100~10 Pa时,SiO2与碳反应在1465~1353 K以上即可生成Si和CO;在1329~1225 K以上即可生成SiC和CO;SiO2和还原剂碳及氟化铝在1464~1353 K以上反应生成SiF4和CO及铝。实验考察了真空低价氟化法炼铝过程中SiO2的分布。XRD表明:SiO2在低价氟化法炼铝过程中有五种走向:(1)被还原成SiC,存在于残渣相;(2)被还原为单质硅,再与还原出的铁生成硅铁,存在于残渣相;(3)SiO2与冰晶石生成铝硅酸盐进入气相中;(4)SiO2与冰晶石生成气态SiF4,再与冰晶石分解的氟化钠形成Na2SiF6进入冷凝相;(5)形成气态低价氧化硅,再在合适温度下分解为单质硅进入冷凝相。     

浅议我国农村社会养老保险的法治困境

我国目前没有关于社会保障的基本法,也没有关于农村社会养老保险的单独立法.现有的关于农村养老保险问题的立法层级单一、位阶较低,制约了我国农村养老保险制度的完善及效用的发挥.完善农村社会养老保险制度,需要从完善立法开始.     

英国红芸豆抗氧化肽组分对H2O2诱导PC12细胞氧化应激损伤的保护作用

为了探究英国红芸豆抗氧化肽组分的抗氧化作用,采用超滤、葡聚糖凝胶G-15层析技术对碱性蛋白酶酶解英国红芸豆抗氧化蛋白质制备的抗氧化产物进行分级,研究抗氧化活性较高的组分对H₂O₂损伤的PC12细胞的影响。结果表明:抗氧化肽组分BRKBAPC-2能缓解H₂O₂对PC12造成的细胞生长抑制作用,随着肽浓度的提高,细胞内活性氧（ROS）水平,丙二醛（MDA）含量及乳酸脱氢酶（LDH）胞外活力均有所降低,超氧化物歧化酶（SOD）、过氧化氢酶（CAT）活力以及还原型谷胱甘肽（GSH）含量均具有所提高,尤其BRKBAPC-2浓度为200 μg/mL时,ROS水平为32.53%,MDA含量为0.96 nmol/μg prot,LDH胞外活力为202.12 U/L,与模型组相比,均极显著降低（P<0.01）;SOD活力为（555.48±3.64）U/mg prot,CAT活力为（14.77±1.30）U/mL,GSH含量为（140.88±8.19）μmol/g prot,与模型组相比,均极显著提高（P<0.01）,此外,其可抑制线粒体膜电位的降低,改善细胞周期的阻滞情况,阻止细胞凋亡关键酶Caspase-3和Caspase-9的激活。可见,抗氧化肽组分BRKBAPC-2对H₂O₂引起的PC12细胞氧化损伤具有一定的保护作用。     

2-羟基-4-甲氧基-5-磺酸基二苯甲酮的合成

采用间苯二甲醚为原料,经酰化、脱甲基、磺化一系列的反应合成2-羟基-4-甲氧基-5-磺酸基二苯甲酮,并对其物料配比、催化剂用量、反应温度以及反应时间等因素作了探索.结果表明酰化反应较佳条件为:以二氯甲烷为溶剂,n(间苯二甲醚)∶n(苯甲酰氯)∶n(无水AlCl3)=1∶1.05∶1.05,反应温度0～5℃,反应时间3 ...     

A novel red-emitting phosphors K2Ba (MoO4)2: Eu, Sm and improvement of luminescent properties for light emitting diodes

The novel red-emitting phosphors K₂Ba(MoO₄)₂: Eu³⁺, Sm³⁺ were prepared by solid-state reaction and their crystal structures, photo luminescent characteristics were investigated. The results show that all samples can be excited efficiently by UV (397 nm) and blue (466 nm) light, which are coupled well with the characteristic emission from UVLED and blue LED, respectively. A small amount of Sm³⁺, acting as a sensitizer, increased the energy absorption around 400 nm. In the Eu³⁺-Sm³⁺ co-doped system, both Eu³⁺ and Sm³⁺ f-f transition absorptions are observed in the excitation spectra, the intensities of the main emission line (⁵D₀ → ⁷F₂ transition of Eu³⁺ at 616 nm) are strengthened because of the energy transition from Sm³⁺ to Eu³⁺. The doping concentration of Eu³⁺-Sm³⁺ was optimized. The approach to charge compensation was used: Ba²⁺ → Eu³⁺/Sm³⁺ + X⁻ (X = F, Cl, and Br), and the influence of charge compensation on the luminescent intensity of phosphors is investigated.     

汉麻绢丝色纺纱的开发

为了在棉纺设备上顺利开发汉麻绢丝色纺纱,针对混纺纤维的性能特点,对染色后的汉麻纤维和绢丝分别进行预处理以提高纤维的可纺性;合理控制投料比及清梳工序中的落棉以保证混纺比;并粗工序合理配置牵伸工艺及采取必要的保湿措施以保证半制品质量;细纱工序合理配置后区牵伸工艺以提高成纱质量。通过一系列技术措施,最终成功纺制出满足质量要求的汉麻/绢丝50/50 18.2 tex色纺纱。     

短波组网技术探讨

讨论了短波组网的特点和要求,综合了几种国外短波网络的体系结构、设计方案,以及用于短滤网络的应用技术,并对中国进一步发展短波网络技术提出建议。     

串行高速HF MODEM

描述了一种４８００ｂｐｓ串行ＨＦ ＭＯＤＥＭ,重点讨论了实现高速数据传输的自适应均衡和纠错编码技术,给出了计算机模拟结果。与ＭＩＬ－ＳＴＤ－１８８－１１０Ａ相比,这里给出的方案在白噪声信道下改善了４ｄＢ,在多径衰落信道下改善更明显。