Introduction of microdoses of germanium and indium dopants into the bulk and surface layers of semiconductor materials

A technique is proposed for introducing microdoses (10^?5–10^?10 g) of germanium and indium metals into semiconductor compounds by coulometric titration in a solid electrolyte cell. The solid electrolytes that are reversible with respect to germanium cations (the GeSe-GeI₂ system containing 5 mol % GeI₂) and indium cations (the InCl₃-MgCl₂ system containing 15 mol % MgCl₂, the InCl₃-CdCl₂ system containing 1.5 mol % CdCl₂, and the In₂S₃-InCl₃ system containing 5 mol % InCl₃) are chosen, and their electric transport properties are characterized. The optimum conditions for electrochemical doping (temperature, current density), under which the current efficiency reaches 90–100%, are determined. The doping with germanium and indium is performed for nonstoichiometric compounds, such as lead monotelluride, indium sulfide, and ternary chalcogenide spinel Cd_{1 ± δ}Cr₂Se₄. The doping efficiency is controlled by measuring the electromotive force of the corresponding electrochemical cells and the Hall effect, as well as using the electrical conductivity method. The solid electrolytes that are reversible with respect to indium are used to determine the standard Gibbs energies of formation of a number of indium-containing semiconductors.     

A Low-Supply-Voltage CMOS Sub-Bandgap Reference

A low-power (21 $muhbox{W}$ ) bandgap reference source that is operable from a nominal supply voltage of 1.4 V is described. The circuit provides an output voltage equal to the bandgap voltage having a low output resistance and allows resistive loading. It does not use resistors or operational amplifiers. Thus, the design is suitable for fabrication in any digital CMOS technology. The circuit uses a current conveyor and current mirrors to convert the proportional to absolute temperature voltage into a current using a MOSFET. The current is converted back to a voltage by using the functional inverse of the FET $v-i$ characteristics. This makes the voltage gain linear and temperature independent. The absence of back-gate bias is the reason for achieving the low supply voltage of operation. Simulation results using the transistor models for the 0.18-$mu$m TSMC process show that the voltage-variation over the temperature range 0 to 100 $^{circ} {hbox {C}}$ is $≪$1 mV.      

Cost-Efficient SHA Hardware Accelerators

This paper presents a new set of techniques for hardware implementations of Secure Hash Algorithm (SHA) hash functions. These techniques consist mostly in operation rescheduling and hardware reutilization, therefore, significantly decreasing the critical path and required area. Throughputs from 1.3 Gbit/s to 1.8 Gbit/s were obtained for the SHA implementations on a Xilinx VIRTEX II Pro. Compared to commercial cores and previously published research, these figures correspond to an improvement in throughput/slice in the range of 29% to 59% for SHA-1 and 54% to 100% for SHA-2. Experimental results on hybrid hardware/software implementations of the SHA cores, have shown speedups up to 150 times for the proposed cores, compared to pure software implementations.      

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Photo-Fenton removal of water-soluble polymers

This paper presents the results of experiments carried out in a laboratory-scale photochemical reactor on the photodegradation of different polymers in aqueous solutions by the photo-Fenton process. Solutions of three polymers, polyethyleneglicol (PEG), polyacrylamide (PAM), and polyvinylpyrrolidone (PVP), were tested under different conditions. The reaction progress was evaluated by sampling and analyzing the total organic carbon concentration in solution (TOC) along the reaction time. The behavior of the different polymers is discussed, based on the evolution of the TOC–time curves. Under specific reaction conditions, the formation and coalescence of solid particles was visually observed. Solids formation occurred simultaneously to a sharp decrease in the TOC of the liquid phase. This may be favorable for the treatment of industrial wastewater containing polymers, since the photodegradation process can be coupled with solid separation systems, which may reduce the treatment cost.     

Synthesis of polyanilines with pendant fluorescent units

Functionalized polyanilines containing biphenyl, terphenyl, carbazole, anthracene, and 4-n-hexylphenyl moieties were synthesized though the reaction of polyaniline in emeraldine base form with sodium salt of corresponding vinylketoaromatics with quantitative yields. Polymers were characterized with Fourier transform infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, and thermogravimetry. The emission characteristics of these polymers in N-methyl-2-pyrrolidone solution were examined. The functionalized polyanilines exhibited an intense green emission.     

Removal of As(V) Ions from Solution by Akaganeite bgr-FeO(OH) Nanocrystals

The original method is developed for producing the new inorganic sorption material of akaganeite bgr-FeO(OH). The material in question is characterized relative to arsenic contained in aqua. The possibility is established for removing arsenate ions from water by contemporary physicochemical methods.     

Femtosecond laser pulse energy tunneling in the range of forbidden frequencies of a one-dimensional photonic crystal

The results of computer simulations demonstrate the possibility of light energy transmission through band gaps of a one-dimensional photonic crystal with fluctuating lengths of individual layers. In the case of weak (±5%) fluctuations, the light pulse energy partly penetrates in depth a photonic crystal. If fluctuations of the layer length are strong (±20%), the light pulse energy can be partly transmitted through the crystal.     

A Fuzzy-Neural Network Method for Modeling Uncertainties in Soil-Structure Interaction Problems

Abstract:   Uncertainty often recurs in structural system characterization as well as in choosing the mechanical model and in calibrating it. When analyzing a structure founded in cohesionless soils, the uncertainty in system modeling comes from soil inherent variability, site conditions, construction tolerance, and failure mechanisms. In this research, a Fuzzy-Neural Network method to predict the behavior of structures built on complex cohesionless soils is proposed. The method is based on an Artificial-Neural Network (ANN) for modeling the soil-foundation interaction. Its learning process analyzes over 200 records of building foundations, tanks, and embankments settlements on sand and gravel. Once validated, ANN is introduced in the soil-foundation-sovrastructure interaction model. Using fuzzy sets to define vague and ambiguous variables, the Fuzzy-Neural Network method predicts the system behavior and quantifies the uncertainty of its response. A numerical example shows the method effectiveness in the case of uncertainty in soil parameters and gives suggestions for successive applications.