增加折叠电流保护的电路

对许多需要数安培供电电流的应用而言，三端输出可调线性稳压器有易用．低成本和完全片上过载保护等特点，如美国国家半导体公司的LM317。增加数个元器件可以使三端稳压器具备一种高速度的短路限流能力，从而提高可靠性。限流器可将最大输出电流限制在一个安全的恒定水平IMAX上，避免稳压器的损坏。当出现一个故障状况时，传输晶体管上的功耗近似于VIN×IMAX。要让设计的稳压器能承受过载，就需要谨慎地选择元器件的额定值（经常是留了过大的余地），除非可以在故障发生时降低或折叠（foldback）输出电流。     

Binary monkey algorithm for approximate packing non-congruent circles in a rectangular container

A Packing problem consists in the best arrangement of several objects inside a bounded area named as the container. This arrangement must fulfill with technological constraints, for example, objects should not be overlapping. Some packing models for circular objects are typically formulated as non-convex optimization problems; where the continuous variables are the coordinates of the objects, so they are limited to not finding optimal solutions. Due to the combinatorial nature in the arrangement of such objects, heuristic methods are being used extensively which combine methods of global search and methods of local exhaustive search of local minima or their approximations. In this paper, we will address the packing problem for non-congruent (different size) circles with the binary version of the monkey algorithm which incorporates a cooperation process and a greedy strategy. We use a rectangular grid for covering the container. Every node in the grid represent potential positions for a circle. In this sense, binary monkey algorithm for the knapsack problem, can be used to solve de 0–1 approximate packing problem for non-congruet circles. The binary monkey problem uses two additional processes of the original monkey algorithm, these two processes are a greedy process and a cooperation processes.

     

CdTe/CdS thin film solar cells grown in substrate configuration

The ability to grow efficient CdTe/CdS solar cells in substrate configuration would not only allow for the use of non‐transparent and flexible substrates but also enable a better control of junction formation. Yet, the problems of barrier formation at the back contact as well as the formation of a p–n junction with reduced recombination losses have to be solved. In this work, CdTe/CdS solar cells in substrate configuration were developed, and the results on different combinations of back contact materials are presented. The Cu content in the electrical back contact was found to be a crucial parameter for the optimal CdCl₂‐treatment procedure. For Cu‐free cells, two activation treatments were applied, whereas Cu‐containing cells were only treated once after the CdTe deposition. A recrystallization behavior of the CdTe layer upon its activation similar to superstrate configuration was found; however, no CdTe–CdS intermixing could be observed when the layers were treated consecutively. Remarkably high V_OC and fill factor of 768 mV and 68.6%, respectively, were achieved using a combination of MoO₃, Te, and Cu as back contact buffer layer resulting in 11.3% conversion efficiency. With a Cu‐free MoO₃/Te buffer material, a V_OC of 733 mV, a fill factor of 62.3%, and an efficiency of 10.0% were obtained. Copyright © 2012 John Wiley & Sons, Ltd.     

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

The making of BaZrS₃ thin films by molecular beam epitaxy (MBE) is demonstrated. BaZrS₃ forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS₆ octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS₃ stoichiometry and an atomically sharp interface with the LaAlO₃ substrate. The films grow epitaxially via two competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-VIs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE.     

Making Large‐Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening

The synthesis of large‐area TiS₂ thin films is reported at temperatures as low as 500 °C using a scalable two‐step method of metal film deposition followed by sulfurization in an H₂S gas furnace. It is demonstrated that the lowest‐achievable sulfurization temperature depends strongly on the oxygen background during sulfurization. This dependence arises because Ti? O bonds present a substantial kinetic and thermodynamic barrier to TiS₂ formation. Lowering the sulfurization temperature is important to make smooth films, and to enable integration of TiS₂ and related transition metal dichalcogenides—including metastable phases and alloys—into device technology.     

用LED测光和发光

LED在便携设备中一般用于显示电源状态、电池状态．或蓝牙连接的活动。LED可以是决定电池寿命的主要因素．因为它们的亮度与功耗成正比。采用一种简单的电路．Altera公司的MAX忆CPLD可以测量其所处环境的模拟光照水平．然后以一个成比例的模拟强度水平驱动一只LED发光。一只LED和偏置电阻可以同时完成测光与发光。图1中的电路只需要45只逻辑元件,而CPLD的编程能力使之能够快速调节电路参数．以适应任何LED的特性。     

Mapping of Discrete Cosine Transforms onto Distributed Hardware Architectures

We present an algorithmically-aware, high-level partitioning methodology for discrete cosine transforms (DCT) targeted to distributed hardware architectures. The methodology relies on the exploration of alternate DCT formulations as part of the partition optimization process. To the best of our knowledge, no previously proposed DCT algorithm exists that is capable of consistently producing alternate regular formulations for an n-size DCT. Hence, a new Cooley-Tukey-like DCT factorization algorithm was developed to allow exploration of alternate formulations as part of the partitioning optimization process. The use of our factorization mechanism along with a greedy strategy to explore the space of equivalent DCT formulations yielded partitioning solutions with as much as 18% reduction in latency and 83% reduction in run-time as compared to previously proposed regular DCT formulations.

Complex‐Shaped Cellulose Composites Made by Wet Densification of 3D Printed Scaffolds

Cellulose is an attractive material resource for the fabrication of sustainable functional products, but its processing into structures with complex architecture and high cellulose content remains challenging. Such limitation has prevented cellulose‐based synthetic materials from reaching the level of structural control and mechanical properties observed in their biological counterparts, such as wood and plant tissues. To address this issue, a simple approach is reported to manufacture complex‐shaped cellulose‐based composites, in which the shaping capabilities of 3D printing technologies are combined with a wet densification process that increases the concentration of cellulose in the final printed material. Densification is achieved by exchanging the liquid of the wet printed material with a poor solvent mixture that induces attractive interactions between cellulose particles. The effect of the solvent mixture on the final cellulose concentration is rationalized using solubility parameters that quantify the attractive interparticle interactions. Using X‐ray diffraction analysis and mechanical tests, 3D printed composites obtained through this process are shown to exhibit highly aligned microstructures and mechanical properties significantly higher than those obtained by earlier additively manufactured cellulose‐based materials. These features enable the fabrication of cellulose‐rich synthetic structures that more closely resemble the exquisite designs found in biological materials grown by plants in nature.