Electronic Transport in Ultrathin Gold Films on Si(111)

The morphology and electronic transport of ultrathin Au films with thicknesses d = 1 ? 5 monolayers (ML) deposited on Si(111)7 × 7 surfaces is investigated by in situ scanning tunneling microscopy and electrical resistance measurements for temperatures T = 2 ? 300 K. With decreasing film thickness, i.e. decreasing sheet conductance G_s, a transition from a weakly conducting regime described by a logarithmic temperature dependence to an insulating regime occurs. In the insulating regime, the temperature dependence is described by G_s ∝ exp[?(T ₀ /T) ⁿ] with an exponent n which gradually changes from 0.69 to 1 with decreasing film thickness. In contrast, for the Si(111)6 × 6-Au reconstruction obtained after annealing, an exponent n = 1/2 is found suggesting the formation of a soft Coulomb gap due to electron-electron interaction. PACS numbers: 68.37.-d, 68.55.-a, 73.50.-h, 73.25.+i, 81.15.-z     

Data in Voice — In-Band Short Messaging Service (SMS) für den analogen Flugfunk

6. Zusammenfassung  In diesem Artikel wurde die Data in Voice-Technologie vorgestellt. DiV ist eine Methode, die es erlaubt, kurze Daten-Messages gemeinsam mit der Sprache im analogen Flugfunkkanal zu übertragen. Man ist bei FREQUENTIS überzeugt, dass man mit dieser Methode viele Nachteile des vorhandenen analogen Flugfunks beseitigen und dadurch die Flugsicherheit wesentlich erh?hen k?nnte.     

Optical and structural properties of MOVPE grown GaxIn1−xAs/InP strained multiple quantum well atructures

This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga _x In_1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.     

Mesa and planar SiGe-HBTs on MBE-wafers

SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with f_max and f_T up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented.     

The High Field Project at Dresden/Rossendorf: A Pulsed 100 T/10 ms Laboratory at an Infrared Free-Electron-Laser Facility

This article describes the project to build a pulsed magnetic field user laboratory at the Forschungszentrum Rossendorf near Dresden. Using a 50 MJ/24 kV capacitor bank, pulsed fields and rise times of 100 T/10 ms, 70 T/100 ms, and 60 T/1 s should be achieved. The laboratory will be built next to a free-electron-laser-facility for the middle and far infrared (5 to 150 µm, 2 ps, cw). We describe the work which has been performed until now to start the construction of the laboratory in 2003: coil concepts and computer simulations, materials development for the high field coils, and design of the capacitor bank modules. In addition, a pilot laboratory has been set up where fields up to 62 T/15 ms have been obtained with a 1 MJ/10 kV capacitor module. It is used to gain experience in the operation of such a facility and to test various parts of it. In this test laboratory special devices have been developed for measurements of magnetization and magnetoresistance, and have been successfully used to investigate various materials including semiconductors and Heavy Fermion compounds. In particular, metamagnetic transitions in intermetallic compounds and the irreversibility field of a high-T _c superconductor have been determined. Shubnikov–de Haas oscillations have been observed in the semimetallic compound CeBiPt. Resistance relaxation has been observed to start less than 1second after the field pulse. It could be shown for the first time that nuclear magnetic resonance (NMR) is detectable in pulsed fields.     

Crystallographic shear planes in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Atomic structures of crystallographic shear planes (CSPs) in nanocrystalline thin films of semiconductor SnO₂ were investigated by high-resolution electron microscopy. The films were prepared by electron beam evaporation in high vacuum (10^–6 torr) and followed by annealing in synthetic air at 700 °C for 1–2 H. CSPs with the displacement vector of [1/2 0 1/2] were observed in the planes parallel to (¯101), (110) and (¯3¯21). Most of the CPSs were found to terminate or interact with each other within SnO₂ crystallites. Partial dislocations exist at terminal places of CSPs or along intersecting lines of CSPs. CSP steps were also observed. Structural models of these defects have been proposed. Based on analysis of experimental data, it has been suggested that the Sn/O ratio at CSPs which are not parallel to their displacement vector, at cores of partial dislocations and at CSP steps, is higher than that of the perfect structure, that is, these defects are able to provide extra free electrons with the films.     

Binding of cadmium,copper, and zinc to humic substances originating from municipal solid waste compost

The application of municipal solid waste (MSW) compost increases both the trace metal loading and the organic matter in the soil. To characterize the quality and metal-binding capacity of the compost OM, we extracted humic acid (HA) and fulvic acid (FA) from mature MSW compost and analyzed them for elemental composition, acid-titratable functional groups, total metal content, and structural components (by ¹³C NMR). HA constituted 67% of all extracted humic substances and differed significantly from HAs of cultivated lands: The compost HA exhibited smaller molecular size, a higher N content, and lower aromaticity due to large amounts of saturated aliphatic components. Metal complexation studies of the extracted HA and FA were performed by equilibrium dialysis titration. The complexing capacity (CC) was highest for Cu: CC_HA = 3357 and CC_FA = 5221 μmol Cu g⁻¹ of dissolved organic carbon (DOC) at pH 5. Zn and Cd were bound (at pH 7) in smaller concentrations: CC_HA(Zn) = 2167, CC_FA(Zn) = 2809, CC_HA(Cd) = 2386, and CC_FA(Cd) = 2468 μmol metal g⁻¹ of DOC. Stability constants for binding on the strongest sites (pK_int) were determined as pK_intHA = 6.6 and pK_intFA = 7.3 for Cu at pH 5; and pK_intHA = 8.0 and pK_intFA = 6.4 for Cd at pH 7. Since these measured parameters fall within the ranges of values obtained for soil humic substances, we conclude that in soils with little organic matter, compost addition will significantly increase the amount of highly reactive organic complexing agents for trace metals in the soil.