Steganalysis of Network Packet Length Based Data Hiding

Recently, data hiding by modifying network parameters like packet header, payload, and packet length has become popular among researchers. Different algorithms have been proposed during the last few years which have altered the network packets in different ways to embed the data bits. Some of these algorithms modify the network packet length for embedding. Although most of the packet length based embedding schemes try to imitate the normal network traffic distribution, they have altered the statistical distribution of network packet lengths during embedding. These statistical anomalies can be exploited to detect such schemes. In this paper, a second order detection scheme for packet length based steganography has been proposed. A comprehensive set of experiments have been carried out to show that the proposed detection scheme can detect network packet length based steganography with a considerably high accuracy.     

Integrated starter generator for 42-V powernet using induction machine and direct torque control technique

This paper describes an integrated starter generator (ISG) for automobile applications with 42-V powernet. This system is based on an induction machine which is directly mounted on the engine crankshaft and controlled using the technique of direct torque control (DTC). The suitability of the technique for ISG application is explained. The control structure of DTC for ISG application is described. Detailed experimental results from a 1.4-1 diesel engine are presented demonstrating the performance of the system during cranking as well as generation. The ISG also incorporates the feature of "on the fly start" during generation mode. Details of a low voltage high current power converter developed for this application are also given.     

Plastic Flow and Dislocation Compensation in ZnS y Se1?y /GaAs (001) Heterostructures

An important goal of lattice-mismatched semiconductor device design is control of threading dislocation densities, which are of particular importance for optoelectronic devices such as photodetectors and light-emitting diodes. The basis for this field of research is an understanding of the dislocation dynamics in mismatched heteroepitaxial structures. We have developed a dislocation dynamics model including dislocation multiplication, misfit–threading dislocation interactions, annihilation and coalescence, and thermal strain, which can be used to understand the strain relaxation and threading dislocation densities in arbitrarily graded ZnS _y Se_1?y /GaAs (001) structures. On the basis of this model, we demonstrate that the dislocation compensation mechanism, whereby mobile threading dislocations can be removed by insertion of a mismatched interface in a graded structure, can be explained by the bending over of threading dislocations associated with misfit segments of one sense by misfit dislocations having the opposite sense. Dislocation compensation, if utilized in device structures, can provide a pathway for the attainment of devices with low threading dislocation densities (D?<?10⁶?cm^?2) while using the minimum total thickness of epitaxial material, with a reduction in deposition time and source chemicals.     

A zero voltage transition boost converter employing a soft switching auxiliary circuit with reduced conduction losses

This paper presents a zero-voltage-transition (ZVT) boost converter using a soft switching auxiliary circuit for power factor correction (PFC) applications. The improvement over existing topologies lies in the positioning of the auxiliary circuit capacitors and the subsequent reduction in the resonant current and therefore the conduction losses as compared to other similar topologies. The proposed converter operates in two modes - Mode 1 and Mode 2. It is shown in the paper that the converter should be designed using the constraints obtained in Mode 1 to achieve low-loss switching. The converter is analyzed and characteristic curves presented which are then used in a detailed design example. Experimental results from a 250 W, 127 V input laboratory prototype switching at 100 kHz verify the design process and highlight the advantages of the proposed topology. The proposed converter is suitable for single-phase, two stage power factor correction circuits with universal input voltage range and power levels up to 3 kW.     

Security based on network topology against the wiretapping attack

In wireless networks, an attacker can tune a receiver and tap the communication between two nodes. Whether or not some meaningful information is obtained by tapping a wireless connection depends the security protocols used. One may use cryptographic techniques to secure the communications. In this article we discuss an alternate way of securing the communication between two nodes. We provide a simple security protocol against a wiretapping attack based on the network topology. Although we study the problem from a theoretical perspective, our protocol is easily implementable. Our protocol is at least as secure as any other protocol against these attacks. We show that an attacker can get any meaningful information only by wiretapping those links that are necessary for the communication between the sender and the receiver. We use techniques from network encoding. Our protocol works for any network topology, including cycle networks. We note here that acyclicity is the main assumption in much of the network encoding literature.     

Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators

Multistate behavior has been achieved in quantum dot gate field-effect transistor (QDGFET) configurations using either SiO _x -cladded Si or GeO _x -cladded Ge quantum dots (QDs) with asymmetric dot sizes. An alternative method is to use both SiO _x -cladded Si and GeO _x -cladded Ge QDs in QDGFETs. In this paper, we present experimental verification of four-state behavior observed in a QDGFET with cladded Si and Ge dots site-specifically self-assembled in the gate region over a thin SiO₂ tunnel layer on a Si substrate. This paper also investigates the use of lattice-matched high-κ ZnS-ZnMgS-ZnS layers as a gate insulator in mixed-dot Si QDGFETs. Quantum-mechanical simulation of the transfer characteristic (I _D–V _G) shows four-state behavior with two intermediate states between the conventional ON and OFF states.     

Cross-Layer Energy Based Clustering Technique for Heterogeneous Wireless Sensor Networks

Wireless Personal Communications - Effect of combination of dual split ring resonator and electromagnetic bandgap structures over substrate integrated waveguide and half-mode substrate integrated...     

Nonlinear Eulerian Analysis of Harmonic Generation in Traveling-Wave Tubes

A third-order nonlinear Eulerian hydrodynamic formulation was developed for the analysis of harmonic generation in helix traveling-wave tubes. The analysis was simple and computationally fast compared to Lagrangian analysis, and contrary to the existing belief, the theory could as well demonstrate the saturation behavior of the device. The performance of the theory was also found to be in close agreement with that of the Lagrangian analysis. The theory is expected to be useful as a first-hand design and simulation tool for microwave and millimetric wave traveling-wave tubes.     

Self‐Assembly of π‐Conjugated Amphiphiles: Free Standing,Ordered Sheets with Enhanced Mobility

Oligo(p‐phenylenevinylenes) (OPVs) with amphiphilic character are synthesized and their self‐assembly characteristics studied. Careful studies point at two morphologically different states of assemblies, with one being two dimensional sheets and the other as rolled tubes. This is also the first time that self‐assembled sheets are achieved for OPVs. Morphological and photo‐physical studies reveal a unique aggregate to aggregate transition between rolled tubes and two dimensional sheets, which is outlined as a more thermodynamic aggregate. The thermodynamic aggregate (2D sheet) is better ordered and consists of chromophores that are better excitonically coupled. The mobilities of these aggregates are also studied for a field effect transistor device and as expected sheets supersede rolled tubes by a couple of orders. More interestingly, the mobility values obtained for the well ordered chromophores in sheets is three orders higher than any other self‐assembled OPV previously reported. It is hypothesized that the better π interactions enforced by the amphiphilic design and the resultant supramolecular organization is a prime factor for such a remarkable rise in mobilities.     

Green biomass active electronic diode

For the first time, a biomass electronic junction functioning as a conventional electronic diode inside green leaves of Vinka-rosa and Plumeria rubra mass structure has been experimentally predicted and studied. The experimental diode demonstrated appropriate conventional electronic diode characteristics. The predicted diode junctions were operated for forward and reverse dc voltage biases in the range of ±1 to 10 and 1 to 30?V respectively. The studies revealed a strong functional dependence on the water content of the green leaf. These studies are sequential to the very recently reported research work of Kosta et al. on bioelectronics and soilelectronics. The study speculatively forecasts the beginning of a new revolutionary era of green biomass electronic circuitry.