基于推挽式带伪直流母线拓扑的光伏逆变器设计

针对中小功率光伏并网发电系统的特点,在分析比较常用拓扑方案的基础上,采用推挽式带伪直流母线的拓扑结构作为光伏并网逆变器的主电路。文中重点阐述了主电路的工作原理和关键电路元件的参数设计,并对整流二极管的缓冲和工频逆变器的控制进行了相应的探讨。最后通过实验结果验证了理论分析的正确性。     

Bacteria-Responsive Multidrug Delivery Nanosystem for Combating Long-Term Biofilm-Associated Infections

Microbial biofilm formation on implantable devices causes chronic infections that cannot be treated with existing antimicrobials. Quorum sensing inhibitors (QSIs) have recently emerged as novel antimicrobials for the prevention of biofilm formation. But blocking QS alone is insufficient to inhibit biofilm-associated chronic infections. Herein, chitosan hollow nanospheres are capped by bacteria-responsive β-casein to form a synergistic antifouling nanosystem consisting of a QSI and bactericide. β-casein is degraded by protease in a bacteria-colonized microenvironment in situ thus, QSI and bactericide are released sequentially. The release of QSI sensitises bacteria effectively through reduction of surface hydrophobicity, eDNA content, and lipopolysaccharide production in biofilms, amplifying the chemotherapeutic action of the bactericide. Compared to the uncoated surface, the coated surface inhibits biofilm formation and removes preformed biofilms of Pseudomonas aeruginosa PAO1 and methicillin-resistant Staphylococcus aureus by 1.8 logs and 1.9 logs of biomass inhibition, respectively. The coated catheters are found to stay clean for 30 days under artificial urine flow, while the uncoated catheters are clogged by bacterial biofilms within 5 days. Finally, the long term antifouling activity in vivo is confirmed. Overall, the nanosystem is devoted to making urinary catheters resistant to bacterial biofilm formation for the long term.     

Composition,structure and electrical properties of DC reactive magnetron sputtered Al2O3 thin films

Thin films of alumina (Al₂O₃) were deposited over Si 〈1 0 0〉 substrates at room temperature at an oxygen gas pressure of 0.03 Pa and sputtering power of 60 W using DC reactive magnetron sputtering. The composition of the as-deposited film was analyzed by X-ray photoelectron spectroscopy and the O/Al atomic ratio was found to be 1.72. The films were then annealed in vacuum to 350, 550 and 750 °C and X-ray diffraction results revealed that both as-deposited and post deposition annealed films were amorphous. The surface morphology and topography of the films was studied using scanning electron microscopy and atomic force microscopy, respectively. A progressive decrease in the root mean square (RMS) roughness of the films from 1.53 nm to 0.7 nm was observed with increase in the annealing temperature. Al–Al₂O₃–Al thin film capacitors were then fabricated on p-type Si 〈1 0 0〉 substrate to study the effect of temperature and frequency on the dielectric property of the films and the results are discussed.     

Highly conductive buried n+ layers in lnp:fe created by MeV energy Si,S, and Si/S implantation for application to microwave devices

To obtain highly conductive buried layers in InP:Fe, MeV energy Si, S, and Si/ Simplantations are performed at 200°C. The silicon and sulfer implants gave 85 and 100 percent activation, respectively, for a fluence of 8 × 10¹⁴ cm⁻². The Si/S co-implantation also gave almost 100 percent donor activation for a fluence of 8 × 10¹⁴ cm⁻² of each species. An improved silicon donor activation is observed in the Si/S co-implanted material compared to the material implanted with silicon alone. The peak carrier concentration achieved for the Si/S co-implant is 2 × 10¹⁹ cm³. The lattice damage on the surface side of the profile is effectively removed after rapid thermal annealing. Multiple-energy silicon and sulfur implantations are performed to obtain thick and buried n⁺ layers needed for microwave devices and also hyper-abrupt profiles needed for varactor diodes.     

Reliability optimization of communication networks using simulated annealing

Two concepts of communication network reliability are considered. The first one, the ‘s-t’ reliability, is relevant for communication between a source station and a terminal station as in the case of a two way telephone communication. The second one, the overall reliability, is a measure of simultaneous connectedness among all stations in the network. An algorthm is presented which selects the optimal set of links that maximizes the overall reliability of the network subject to a cost restriction, given the allowable node-link incidences, the link costs and the link reliabilities. The algorithm employs a variaton of the simulated annealing approach coupled with a hierarchical strategy to achieve the gobal optimum. For complex networks, the present algorithm is advantageous over the traditional heuristic procedures. The solutions of two representative example network optimization problems are presented to illustrate the present algorithm. The potential utilization of parallel computing strategies in the present algorithm is also identified.     

Chrestenson函数序列的生成方法及其数学分析

本文提出了适于三种序号的Ｃｈｒｅｓｔｅｎｓｏｎ函数序列的复制方法，对其复制过程进行了数学分析，并指出当Ｃｈｒｅｓｔｅｎｓｏｎ函数退化为Ｗａｌｓｈ函数时，此方法即为复制理论中的平移复制方法。     

Spatially-multiplexed fibre-optic Bragg grating strain andtemperature sensor system based on interferometric wavelength-shiftdetection

A prototype fibre-optic system using interferometric wavelength-shift detection, capable of multiplexing up to 32 fibre-optic Bragg grating strain and temperature sensors with identical characteristics, has been demonstrated. This system is based on a spatially multiplexed scheme for use with fibre-based low-coherence interferometric sensors, reported previously. Four fibre-optic Bragg grating channels using the same fibre grating have been demonstrated for measuring quasi-static strain and temperature     

Transient scattering by conducting cylinders-TE case

Transient scattering (transverse electric case) by two-dimensional cylinders, both open and closed, is investigated using the marching-on-in-time technique. A simple averaging scheme is also presented to control the late-time oscillations. Numerical results are presented for certain representative geometries and compared with inverse Fourier transform techniques. Good agreement is noted in each case     

Triangular ray-tube analysis of dielectric lens antennas

A new method of analysis for the radiation characteristics of dielectric lens antennas with arbitrary inner and outer surfaces is presented. The analysis is based on representing the feed illumination by a contiguous set of ray tubes and including the effects of surface reflections and ray divergence. Radiation patterns and the antenna gain are then computed by evaluating the closed-form expressions developed for the Kirchhoff's integral of the aperture fields. The validity of the analysis method has been demonstrated by comparing the computations with measured results of two different spherical lenses and a shaped lens configurations. The analysis method presented takes into account some of the practical aspects associated with lens design such as surface zoning to reduce the mass and surface matching to minimize the reflection loss     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.