Measurement of thermal lensing in Cr3+-dopedcolquiriites

The first direct measurements of thermally induced lensing in end-pumped Cr³⁺-doped LiSrAlF₆, LiSrGaAlF₆ , LiSrCaAlF₆, and LiCaAlF₆ are reported. Using a sensitive measurement technique, focal lengths as long as 40 m were measured. A thermal model has been created to determine the temperature rise as a function of position inside the laser crystal. This new model calculates the temperature distribution by considering quantum defect, upconversion, and upper state lifetime quenching as heating sources. Thermal lensing in the colquiriites is significantly reduced because of compensation of the temperature-dependent refractive index by the induced photoelastic stress inside the colquiriite crystal     

A holographic transform domain image watermarking method

A transform domain image tagging orwatermarking method that survives image cropping (and, hence, is holographic) was proposed at Bell Labs in September 1994. This report analyzed in detail the various properties of this method and introduces an optimal procedure for watermark recovery.     

Broad-band second-harmonic generation in holey optical fibers

Holey fibers are shown to have an ideal geometry for efficient parametric processes due to their tailorable modal properties. These fibers can have the additional advantage of single-mode operation at all the interacting wavelengths. We demonstrate theoretically that by appropriate choice of holey fiber geometry, these fibers can be up to four orders of magnitude more efficient for second harmonic generation than conventional poled fibers     

Efficient computation of the steady-state response of periodicnonlinear microwave circuits using a convolution-based sample-balancetechnique

The authors describe an efficient and robust approach to the computation of the steady-state response of periodic nonlinear microwave circuits. The problem of solving a set of differential equations is converted into that of solving a system of nonlinear algebraic equations using a technique called convolution-based sample balance. Although exact in all cases for which harmonic-balance techniques are exact, this technique does not require the use of discrete Fourier transforms, and calculating the Jacobian is straightforward. For the solution of the resulting system of nonlinear equations, an efficient and yet robust algorithm has been developed. In the examples given, savings in computational effort of over 85% are reported when this algorithm is compared with Newton's method     

Traveling Reaction Zone Method for Preparation of Textured Ceramic Superconductor Thick Films

Textured thick films of superconducting YBa₂Cu₃O_7−x (YBCO) have been prepared on ceramic substrates using a traveling reaction zone method. The technique utilizes the rapid reaction between Y₂Cu₂O₅ and BaCuO₂ to form YBCO as the film passes through a steep temperature gradient furnance. The films consist of a single continuous superconducting phase with strong c -axis orientation normal to the translation direction of the film.     

Rotary injection reaction injection molding (RI-RIM). Part II: Interfacial segregation of release systems

This paper describes the shear imposed interfacial segregation of release systems for the facilitated attenuation of polyurethane (PU) adhesion to metal coun-terfaces using a RI-RIM system. It is shown that the migration rate of the dispersed release additives due to a shear imposed stress in the resin fluid is much greater than that arising from Fickian diffusion, thereby removing a vital constraint from conventional practice. The novel rotary injection RIM system is presented to simulate the on-line injection and shear induced interfacial segregation in model PU/abherent systems. A wide range of recipes comprising single (liquids or solids) and multicomponent (liquid-liquid and solid-liquid) release materials were injected into the polymerizing resin mixture to provide cohesively weak and friable “particle” boundary layer assemblies at the PU/metal interface. An instrumented Blister Test was employed to evaluate the quality of the molded interfaces in terms of adhesion and the concentration distribution of the injected species in the final cured moldings was determined through high pressure liquid chromatography (HPLC). A comparison of the results on the shear modified and the compounded interfaces confirm an accentuated lateral migration of the additives to the interface resulting in an appreciable diminution in the adhesion of the system. Finally, transport models are suggested to account for the observed augmented transport.     

Multi-terawatt femtosecond Cr:LiSAF laser

We discuss the design of a Cr:LiSAF laser system capable of generating ultrashort, 90-fs Fourier-transform limited pulses with a peak power of 8 TW. Using chirped pulse amplification and flashlamp-pumped Cr:LiSAF amplifiers this system incorporates a regenerative amplifier and three additional double-pass amplifiers with increasing aperture up to 25 mm. The temporal performance as well as the spatial beam quality are discussed in detail. We discuss extension of this system to the Petawatt power level     

Measurement of group birefringence and dispersion of polarisation maintaining erbium-doped silica fibre

The group birefringence and chromatic dispersion of a polarisation maintaining bow-tie erbium-doped silica fibre have been measured in the wavelength range 1.2-1.68 mu m by an interferometric measurement technique without any polarisers. The group birefringence is lower than that of a conventional bow-tie fibre and the zero dispersion wavelengths of the two polarisation modes are shifted to 1.613 and 1.630 mu m.<>     

HF chemical etching of SiO2 on 4H and 6H SiC

Thickness and etch rate of SiO₂ films thermally grown on hexagonal SiC substrates were compared to results obtained from SiO₂/Si samples. The data confirm that profilometry and ellipsometry yield the same thickness values for oxides grown on Si and SiC. Within the accuracy of our measurements, oxides grown on different polytypes and faces of SiC etch at the same rate in a HF acid solution. The etch rate using a 50:1 H₂O:HF(50%) solution at room temperature is 0.1 nm/s and is uniform throughout the thickness of the SiO₂ films. The rate is the same as that obtained for SiO₂ grown on Si.