20-nm optical wavelength conversion using nondegenerate four-wavemixing

Wavelength conversion of optical signals over 20 nm is demonstrated using highly nondegenerate four-wave mixing in a semiconductor traveling-wave optical amplifier. This technique has the potential for extremely-high-speed operation and allows continuous tuning of both input and output wavelengths over the amplifier gain bandwidth. It is demonstrated that, even for such a large wavelength conversion range, it is possible to obtain conversion efficiencies in excess of -10 dB and high extinction ratios. The feasibility of the technique is demonstrated by system measurements at 622 Mb/s, showing a 1.1-dB power penalty at 10^-9 bit error rate (BER)     

Morphological changes induced by colchicine in the chick optic cup in early stages of development. A stereological study

In this study chick embryo optic cups at HH stage 13 of development were analyzed under normal conditions and after inoculation with colchicine for 1, 2, 4, and 8 h. Several changes were seen after these periods of treatment: 1) modifications of the structure, with thicker regions in the cup and a general decrease in the total volume according to the duration of exposure to the drug (about 4 times less than normal, 5,035 x 10(3) microns 3 vs 1,334 x 10(3) microns 3 after 8 h of treatment); 2) enlargement of the ventricular cavity and its closure, due to failure of approximation of retinal and pigmentary layers; 3) failure of lens development, with delay and impairment of pit formation and deformation of all structures; lens volume was less than normal (about 4 times less, 2,148 x 10(3) microns 3 vs 658 x 10(3) microns 3 after 8 h of treatment); 4) a general segregation of the cells making up the structure, principally in the more active proliferating zones. The local alterations found are described.     

Étude du refroidissement avec solidification d'un fluide pseudoplastique thermodépendant

Heat transfer of highly consistent shear-thinning fluids flowing in a horizontal cylindrical channel has been investigated numerically and experimentally when the outer channel wall is subjected to a constant convective heat exchange. The case considered being cooling, a possible ice deposit must be taken into account. The variation of the rheological properties with temperature must be considered as well.     

Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity

An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W.     

50 years of the IEEE Microwave Theory and Techniques Society

The early history of the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) is summarized since its founding in 1952, and all administrative committee members and presidents are listed. Some of the more recent changes resulting from growth and multinational participation are described. Publications are discussed with editors listed for this Transactions, the IEEE Microwave and Wireless Components Letters, the IEEE Microwave Newsletter, and IEEE Microwave Magazine. The chronological evolution of the IEEE MTT-S's awards is presented, including a listing of all award winners. Distinguished lecturers and microwave symposia sites and chairpersons are also discussed. Early technology trends are described     

General properties of antennas

In antenna design there are some fundamental relationships based on reciprocity. The equivalence of antenna pattern in transmission and reception is well known. Less well known is the time-derivative relationship going from reception to transmission. These relationships are derived here and expressed in various useful forms. Electric and magnetic dipoles are given special consideration, and the combined form constructed as a terminated TEM transmission line (the BTW antenna) is discussed for its transmission and reception properties     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication