Crystallization behaviour of Ni-Co-base metallic glasses by isochronal and isothermal annealing

The crystallization behaviour of three amorphous alloys, Co₅₀Ni₂₅Si₁₅B₁₀, Ni₅₀Co₂₅Si₁₅B₁₀ and Ni₅₀Co₂₅P₁₅B₁₀, was studied by means of differential thermal analysis in conjunction with scanning transmission electron microscopy. Isochronal annealing showed a strong dependence of crystallization on scan rate over the range of 1.99 to 20.70 K min^–1. At high Co/Ni ratios, a sequential two-stage crystallization process involving primary MS-I phase followed by MS-II phase precipitation was observed. At low Co/Ni ratios MS-I and MS-II crystallization were concurrent and inseparable. Replacement of the metalloid Si with P as the glass-former dramatically reduced the activation energy for crystallization as well as the crystallization temperature. A mechanistic understanding of these findings was pursued in light of TEM/STEM microanalysis     

有扰对称信道平均信息量的计算

照相手机让诺基亚抢了风头，这真是亚洲人的失策。在日本和韩国，内置摄像头的手机早就不是什么值得炫耀的东西了。不过日本人的动作还是很快的，GD88和N8一副后来居上的架势，让人不敢小瞧。     

Exploratory analysis of brain connectivity with ICA.

Covariance-based methods of exploration of functional connectivity of the brain from functional magnetic resonance imaging (fMRI) experiments, such as principal component analysis (PCA) and structural equation modeling (SEM), require a priori knowledge such as an anatomical model to infer functional connectivity. In this research, a hybrid method, combining independent component analysis (ICA) and SEM, which is capable of deriving functional connectivity in an exploratory manner without the need of a prior model is introduced. The spatial ICA (SICA) derives independent neural systems or sources involved in task-related brain activation, while an automated method based on the SEM finds the structure of the connectivity among the elements in independent neural systems. Unlike second-order approaches used in earlier studies, the task-related neural systems derived from the ICA provide brain connectivity in the complete statistical sense. The use and efficacy of this approach is illustrated on two fMRI datasets obtained from a visual task and a language reading task.     

Comparisons of PWM and one-cycle control for power amplifier with multilevel converter

Based on the concepts of cascade multilevel converters and one-cycle technique, comparisons are conducted to characterize the distortion of the pulsewidth modulation (PWM) and one-cycle control methods that were applied to converters. Simulation results for the different control schemes are obtained in PSIM software initially to see the effect of one-cycle control different from that of PWM control. Through the comparisons, the advantages and disadvantages are identified for each method. The one-cycle scheme is better than PWM control in reducing undesirable harmonics and tracing dynamic waveforms. Simulation and experimental results are also provided to verify the conclusions.     

27keV Ar~+斜入射时的Cu-Au合金溅射实验角分布

用27keV Ar~+分别在垂直和倾斜入射情况下,轰击了Cu-Au(30wt％)合金样品,测量了Cu和Au原子的溅射角分布。角分布是用卢瑟福背散射(RBS)技术分析Al捕获膜上的Cu-Au沉积成分而定量得到的。结果表明:(1)在Ar~+倾斜(θ=40°)入射时,Cu原子择优发射,且程度比垂直入射(θ_r=O°)时增强:(2)倾斜入射时,Cu原子的角分布显示出在接近于样品表面法线方向的发射角范围内(θ<45°),发射机率比垂直入射时减小。     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.