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991.
The authors report a 4 M word×1 b/1 M word×4 b BiCMOS SRAM that can be metal mask programmed as either a 6-ns access time for an ECL 100 K I/O interface to an 8-ns access time for a 3.3-V TTL I/O interface. Die size is 18.87 mm×8.77 mm. Memory cell size is 5.8 μm×3.2 μm. In order to achieve such high-speed address access times the following technologies were developed: (1) a BiCMOS level converter that directly connects the ECL signal level to the CMOS level; (2) a high-speed BiCMOS circuit with low threshold voltage nMOSFETs; (3) a design method for determining the optimum number of decoder gate stages and the optimum size of gate transistors; (4) high-speed bipolar sensing circuits used at 3.3-V supply voltage; and (5) 0.55-μm BiCMOS process technology with a triple-well structure  相似文献   
992.
993.
994.
Coating of hydroxyapatite on various metal plates was carried out by a homogeneous precipitation technique using hydrothermal reactions in Ca(edta)2-–NaH2PO4 at 140–200°C and pH 3.4–10.0. Hydroxyapatite films were formed on the surface of the iron plates in solutions at an initial pH above 4.7, whereas aggregates consisting of needle-like hydroxyapatite crystal radiating from a point in the form of flower deposited as islands on the surface of aluminum, copper and titanium plates. The upper part of the film formed on the surface of the iron plates consisted of needle-like hydroxyapatite particles whereas the bottom of the film consisted of spherical hydroxyapatite particles. The length of the needle-like hydroxyapatite particles increased with decreasing concentration of Ca(edta)2-.  相似文献   
995.
996.
SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with fmax and fT up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented.  相似文献   
997.
Directional features extracted from Gabor wavelets responses were used to train a structure of self-organising maps, thus classifying each pixel in the image within a neuron-map. Resulting directional primitives were grouped into perceptual primitives introducing an extended 4D Hough transform to group pixels with similar directional features. These can then be used as perceptual primitives to detect salient structures. The proposed method has independently fixed parameters that do not need to be tuned for different kind or quality of images. We present results in application to noisy FLIR images and show that line primitives for complex structures, such as bridges, or simple structures, such as runways, can be found by this approach. We compare and demonstrate the quality of our results with those obtained through a parameter-dependent traditional Canny edge detector and Hough line finding process.  相似文献   
998.
A high-speed bilevel reproduction algorithm, called modified error diffusion (MED) algorithm, has been developed to provide high-quality halftoning images for continuous tone images and has been implemented in a CMOS LSI chip. The chip has been designed with standard-cell 1.5-μm CMOS technology using an optimum layout design. The chip has achieved a maximum processing speed of 60 ns/pixel  相似文献   
999.
1000.
Stabilization of the trajectories of a linear discrete system closed by dynamic feedback under interval uncertainty of the equations of motion and observation is studied. Sufficient conditions of stabilizability are formulated. Results of numerical experiments are given.  相似文献   
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