Micromechanical approach to damage mechanics of composite materials with fabric tensors

The purpose of this study is to apply continuum damage mechanics – introduced through the concept of fabric tensors – to composite materials within the framework of the theory of elasticity. A directional data model of damage mechanics for composite materials will be developed using fabric tensors. The introduction of fabric tensors into the analysis of damage of composite materials will allow for an enhanced and better understood physical meaning of damage. The micromechanical approach will be used here to relate the damage effect through fabric tensors to the behavior of composite materials. In this approach, damage mechanics is introduced separately to the constituents of the composite material through different constituents’ damage effect tensors. The damaged properties of the composite system as a whole can then be obtained by proper homogenization of the damaged properties of the constituents.

The derivation of a generalized formulation of damage evolution will be shown here in a mathematically consistent manner that is based on sound thermodynamic principles. Numerical examples will be presented to show applicability. In addition, damage evolution for the one-dimensional tension case is also illustrated.     

On one boundary-value problem for the Laplace equation

We have derived a Fredholm-type equation of the second kind for a directional derivative problem arising in the stationary theory of heat conduction. One result of Ya. B. Lopatinskii has been refined. __________ Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 80, No. 2, pp. 197–200, March–April, 2007.     

Low Temperature Acoustic Properties of Poly-Crystalline Aluminium

As in other structurally disordered solids, the low temperature acoustic properties of poly-crystalline aluminium are governed by atomic two-level tunneling systems. The particular temperature variation of sound velocity and internal friction depends on the dynamical behaviour of these tunneling systems, which is expected to be determined by interaction with thermal phonons and conduction electrons as in metallic glasses. In earlier measurements on aluminium-wires no significant difference was found whether the sample was superconducting or kept in the normal state by a sufficiently high magnetic field and the concluding claim was ‘absence of electron-assisted relaxation for tunneling systems in poly-crystalline metals’. In this report, vibrating reed measurements are presented of pure poly-crystalline Al with a special sample shape that reduces the influence of the clamping. We in fact find significant differences between the sample being normal conducting or superconducting. The overall behaviour indeed resembles very closely that of metallic glasses and clearly demonstrates that also in Al tunneling systems couple to conduction electrons as expected. As a quantitative result we may state that the density of states of tunneling systems in poly-crystalline Al is considerably smaller than in metallic glasses. PACS numbers: 61.43.-j, 62.65.+k, 63.50.+x     

Models in thermoluminescence

The aim of this paper is to give a review of the main models of thermoluminescence, from the most simple postulated by Randal and Wilkins in 1945. After that, a computer simulation emphasizes some problems relative to the use of the models to describe the behaviour of the thermoluminescent glow curve. Some suggestions are also given for obtaining a correct interpretation from the experimental data.     

Ion-beam-defect processes in group-III nitrides and ZnO

Recently, there has been much interest in wide band-gap wurtzite semiconductors such as group-III nitrides (GaN, AlGaN, and InGaN) and ZnO. Ion-beam-defect processes are considerably more complex in these wurtzite semiconductors than in the case of both elemental and group-III-V cubic semiconductors. This brief review focuses on our recent studies of the following aspects of ion-beam-defect processes: (i) effects of implanted species and the density of collision cascades, (ii) the nature of ion-beam-produced planar defects in GaN, (iii) defect production in GaN by swift heavy ions, (iv) blistering of H-implanted GaN, (v) electrical isolation of GaN and ZnO, (vi) the effect of Al and In content on defect processes in III-nitrides, and (vii) structural damage in ZnO with an intriguing effect of the formation of an anomalous defect peak. Emphasis is given to unusual ion-beam-defect processes and to the physical mechanisms underlying them.