Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

Frequent clones of p53-mutated keratinocytes in normal human skin

The multiple genetic hit model of cancer predicts that normal individuals should have stable populations of cancer-prone, but noncancerous, mutant cells awaiting further genetic hits. We report that whole-mount preparations of human skin contain clonal patches of p53-mutated keratinocytes, arising from the dermal-epidermal junction and from hair follicles. These clones, 60-3000 cells in size, are present at frequencies exceeding 40 cells per cm2 and together involve as much as 4% of the epidermis. In sun-exposed skin, clones are both more frequent and larger than in sun-shielded skin. We conclude that, in addition to being a tumorigenic mutagen, sunlight acts as a tumor promoter by favoring the clonal expansion of p53-mutated cells. These combined actions of sunlight result in normal individuals carrying a substantial burden of keratinocytes predisposed to cancer.     

Dynamic programming implementation on array processor architectures

Dynamic Programming (DP) applies to many signal and image processing applications including boundary following, the Viterbi algorithm, dynamic time warping, etc. This paper presents an array processor implementation of generic dynamic programming. Our architecture is a SIMD array attached to a host computer. The processing element of the architecture is based on an ASIC design opting for maximum speed-up. By adopting a torus interconnection network, a dual buffer structure, and a multilevel pipeline, the performance of the DP chip is expected to reach the order of several GOPS. The paper discusses both the dedicated hardware design and the data flow control of the DP chip and the total array.This work was supported in part by the NATO, Scientific and Environmental Affairs Division, Collaborative Research Grant SA.5-2-05(CRG.960201)424/96/JARC-501.     

Large signal analysis of the LCC-type parallel resonant converterusing discrete time domain modeling

A discrete time domain model for the LCC-type parallel resonant power converter has been derived. This model has been used to predict the large signal behavior of the power converter. The peak component stresses and the dynamic response of the key state variables, as obtained from the large signal analysis, using PRO-MATLAB software are plotted. SPICE results are included to verify the analytical results. Experimental results are also presented to verify the theory     

Strict calculation of the light statistics at the output of a travelling wave optical amplifier

A new method for calculating the probability density function of the photon number propagating through a travelling wave optical amplifier with no restriction on its working regime (linear and nonlinear) is reported. The authors show that the widely used Gaussian approximation of the probability density function does not match the real statistics if the incident optical power is small.<>     

Effect of repositioning of rhodium direct-charge detectors in a RBMK-1000 reactor on fuel and emitter-material burnup coefficients

Scientific-Technical Center “Atomtekhénergo.” Leningrad Nuclear Power Plant. N. V. Sultanov Institute of Nuclear Reactors, Russian Scientific Center “Kurchatovskii institut.” Translated from Atomnaya énergiya, Vol. 76, No. 6, pp. 470–473, June, 1994.