全文获取类型
收费全文 | 607038篇 |
免费 | 8569篇 |
国内免费 | 2978篇 |
专业分类
电工技术 | 12162篇 |
技术理论 | 5篇 |
综合类 | 1540篇 |
化学工业 | 92748篇 |
金属工艺 | 24628篇 |
机械仪表 | 19305篇 |
建筑科学 | 13849篇 |
矿业工程 | 3585篇 |
能源动力 | 15894篇 |
轻工业 | 48855篇 |
水利工程 | 6522篇 |
石油天然气 | 12290篇 |
武器工业 | 285篇 |
无线电 | 70231篇 |
一般工业技术 | 119773篇 |
冶金工业 | 113377篇 |
原子能技术 | 13057篇 |
自动化技术 | 50479篇 |
出版年
2021年 | 5860篇 |
2020年 | 4323篇 |
2019年 | 5427篇 |
2018年 | 8946篇 |
2017年 | 8919篇 |
2016年 | 9653篇 |
2015年 | 6555篇 |
2014年 | 10606篇 |
2013年 | 28925篇 |
2012年 | 17254篇 |
2011年 | 23050篇 |
2010年 | 18498篇 |
2009年 | 20420篇 |
2008年 | 21311篇 |
2007年 | 21245篇 |
2006年 | 18946篇 |
2005年 | 16716篇 |
2004年 | 15510篇 |
2003年 | 15031篇 |
2002年 | 14533篇 |
2001年 | 14503篇 |
2000年 | 13638篇 |
1999年 | 14053篇 |
1998年 | 34368篇 |
1997年 | 24185篇 |
1996年 | 18589篇 |
1995年 | 13861篇 |
1994年 | 12367篇 |
1993年 | 12322篇 |
1992年 | 9100篇 |
1991年 | 8558篇 |
1990年 | 8627篇 |
1989年 | 8333篇 |
1988年 | 7829篇 |
1987年 | 6835篇 |
1986年 | 6786篇 |
1985年 | 7563篇 |
1984年 | 7072篇 |
1983年 | 6457篇 |
1982年 | 5832篇 |
1981年 | 6085篇 |
1980年 | 5586篇 |
1979年 | 5665篇 |
1978年 | 5519篇 |
1977年 | 6070篇 |
1976年 | 7916篇 |
1975年 | 4827篇 |
1974年 | 4511篇 |
1973年 | 4590篇 |
1972年 | 3858篇 |
排序方式: 共有10000条查询结果,搜索用时 9 毫秒
91.
K. A. Abdikalikov V. K. Zadiraka O. S. Kondratenko S. S. Mel'nikova 《Cybernetics and Systems Analysis》1991,27(3):414-419
A fast algorithm is proposed for estimating the auto- and cross-correlation functions of a large signal. The algorithm is based on the sectioning method by the fast Fourier transform. We determine the optimal length of the portion of data read from external memory into RAM which achieves Tmin—a minimum processing time. An estimate of Tmin is obtained.Translated from Kibernetika, No. 3, pp. 78–81, May–June, 1991. 相似文献
92.
93.
94.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
95.
96.
S N Maitra 《Sadhana》1985,8(4):373-385
The burn time and burnout velocity of a multistage rocket flown vertically in vacuum with constant thrust tangential to the
flight path and a prescribed initial/final thrust-to-weight ratio in an arbitrary stage have been determined.
The present paper also deals with optimal staging under given conditions of flight. 相似文献
97.
The dynamic linewidth of 1.5 ?m ridge waveguide DFB lasers is shown to be reduced by shaping the pulse of the laser modulating waveform. Pulse shaping is performed by a second-order network designed to cancel the small-signal laser resonance. Results demonstrate a dynamic linewidth reduction from 1.4 ? to 0.55 ? FWHM for a 500 ps pulse. 相似文献
98.
99.
A. N. Gudkov V. M. Zhivun A. V. Zvonarev V. V. Kovalenko A. B. Koldobskii Yu. F. Koleganov S. V. Krivasheev V. B. Pavlovich N. S. Piven' E. V. Semenova 《Atomic Energy》1989,66(2):115-118
Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 100–103, February, 1989. 相似文献
100.
It is suggested that the chord length distribution method could be useful for predicting double-bit upset rates in certain circumstances. A chord length distribution function for simultaneous path lengths in two parallelepipeds, applicable to a unidirectional flux, is derived. A proof of the system is outlined for the case under consideration 相似文献