Synthesis of TiO<Subscript>2</Subscript> Hybrid Molecular Imprinted Polymer for Ethofumesate Linked by Silane Coupling Agent

TiO₂ hybrid molecular imprinted polymer (MIP) for ethofumesate using methacrylic acid (MAA) as the functional monomer and silane coupling agent 3-(trimethoxysilyl) propylmethacrylate (KH570) as organic–inorganic connective bridge was synthesized via photo-excitation method. Hydrogen bond was proved to act between MAA and ethofumesate for pre- and post-polymerization binding properties as testified by UV spectrometric method. KH570 modified TiO₂ nanoparticles were prepared via sonochemical reaction, which can accelerate hydrolysis, increase collision chance for the reactive system and improve the dispersion of the nanoparticles. Scanning electron microscope (SEM), transmission electron microscope (TEM), binding and the adsorption kinetics experiments as well as thermogravimetric analysis (TGA) were employed for characterization. The results indicated that the hybrid MIP revealed a larger surface area and more ordered imprinting cavities with improved thermal stability compared to organic-only MIP. Furthermore, faster adsorption kinetics and enhancive adsorption capacity were achieved, which made it promising in chemical sensor applications.     

Luminescence from praseodymium doped AlN thin films deposited by RF magnetron sputtering and the effect of material structure and thermal annealing on the luminescence

Thin films of Praseodymium doped AlN are deposited on silicon (111) substrates at 77 K and 950 K by rf magnetron sputtering method. About 500–1000 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target of Al with Pr. X-rays diffraction results show that films deposited at 77 K are amorphous and those deposited at 950 K are crystalline. Cathodoluminescence studies are performed at room temperature and luminescence peaks are observed in a wide range from ultraviolet to infrared region. The most intense peak is obtained in green at 526 nm from amorphous films as a result from ³P₁→³H₅ transition. In crystalline films the intense peak was obtain in red at 648 nm as a result from ³P₀→³F₂ transition. Films are thermally activated at 1300 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence. Two peaks at 488 nm and 505 nm merged after thermal activation, giving rise to a single peak at 495 nm.     

Growth of highly orientated strontium barium niobate thin films on Si substrates through the sol–gel process using a K: SBN template layer

We report the growth of highly C-axis orientation of Sr _x Ba_1−x Nb₂O₆ (SBN) thin films on p-type (100) Si substrates by using a potassium-substituted SBN template layer with the sol–gel method. The crystallization of SBN thin films was found closely related to the potassium ion doping concentration and the postannealing temperature of the K-SBN template layer. Secondary ion mass spectrometry analysis showed that potassium elements were accumulated at the interface of the template layer and silicon substrate. SBN films postannealed at 750 °C with K-SBN template layer has a smaller full width at half maximum of X-ray rocking curve of 2.45° than that of 5.40° for the pure SBN films. By introducing a template layer, the surface morphologies of SBN films fabricated on silicon substrate were greatly improved.     

Formation mechanism of 21R AlN-polytypoids in aluminothermic reduction and nitridation process

Synthesis of 21R AlN polytypoids was investigated using Al and ultrafine SiO₂ powder in a flowing nitrogen atmosphere by means of thermal gravity (TG), differential scanning calorimeter (DSC), X-ray diffractometer (XRD) and scanning electronic microscope (SEM) linked with energy dispersive spectrometer (EDS). The results showed that the formation mechanism of AlN polytypoids was different from that in reaction sintering process using Si₃N₄, AlN, Al₂O₃ and other sintering additive as raw materials. It was suggested that firstly Al reduce SiO₂ into Si and is also nitrided into AlN, then AlN, Al₂O₃ and SiO₂ dissolve into silicon liquid until the AlN polytypoids precipitate in saturated liquid in a flowing nitrogen atmosphere at lower than 1700 °C.     

Structural properties of phosphorous-doped polycrystalline silicon

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E_L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si–H vibration mode at 2000 decreases faster than the one at 2100 cm⁻¹. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2–0.3 eV compared to the amorphous starting materials.     

External Synchronization of 160-GHz Optical Beat Signal by Optical Phase-Locked Loop Technique

We have synchronized a 160-GHz optical beat signal with a 40-GHz reference optical pulse train by using an optical phase-locked loop (OPLL). The OPLL consists of an optical beat signal source, comprising a pair of three-electrode distributed feedback laser diodes that works as a voltage controlled oscillator, and an all-optical phase detector based on the two-photon absorption in a silicon avalanche photodiode. Phase-locking operation is confirmed through phase-error measurement and cross-correlation trace measurement. The residual timing jitter of the 160-GHz optical beat signal relative to the reference pulse train, in the bandwidth of 80 MHz, is measured to be as small as 126 fs     

Contributions of the interior and surface states of charge carriers to the emission spectra of CdS quantum dots in borosilicate glasses

The photoluminescence spectra of CdS quantum dots grown in a borosilicate glass by sol-gel technology are recorded and analyzed. It is shown that the photoluminescence spectra of the samples are related to annihilation of free (interior) excitons in the ground state and excited state. Emission associated with the surface states of the quantum dots is detected in the region around 2.7 eV for the first time. The emission is due to recombination of electrons localized at the surface with heavy holes in the free states of the quantum dots. Resonance excitation of the structures makes it possible to reveal the specific features of the localized surface states responsible for the photoluminescence band. The properties of the band are, to a large extent, similar to the properties of the emission bands of both three-dimensional media (amorphous semiconductors and substitution alloys) and two-dimensional systems (quantum wells and superlattices).     

Electrical characteristics of the ITO/HgInTe photodiodes

Photodiodes designed to be sensitive in the region 0.5–1.7 μm and obtained by vacuum magnetron sputtering of the ITO (SnO₂ + In₂O₃) layer on the surface of the Hg₃In₂Te₆ single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described quantitatively based on the energy diagram and the found parameters of the heterojunction. Original Russian Text ? L.A. Kosyachenko, I.M. Rarenko, E.F. Sklyarchuk, I.I. German, Sun Weiguo, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 568–571.     

User interfaces for communication bridges across the digital divide

Connecting people across the “digital divide” is as much a social effort as a technological one. We are developing a community-centred approach to learn how interaction techniques can compensate for poor communication across the digital divide. We have incorporated the lessons learned regarding social intelligence design in an abstraction and in a device called the SoftBridge. The SoftBridge allows communication to flow from endpoints through adapters, getting converted if necessary, and out to destination endpoints. Field trials are underway with two communities in South Africa: disadvantaged Deaf users and an isolated rural community. Initial lessons learned show that we have to design user interfaces that allow users to understand and cope with delay. We also learned that social concerns are often more important than the technical issues in designing such systems.     

A process-dependent real-time controller for sequencing batch reactor plants: results of full-scale operation.

This paper presents results of a research project, in which a process-dependent real-time control (RTC) strategy for a sequencing batch reactor plant was realised in full-scale. The cycle controller is based on NH4 analysers, NO3 probes, TSS probes and sludge level probes. With this new RTC strategy it was possible to increase the treatment capacity by 50%. By implementation of the new controller the TN, TP and NH4-N treatment efficiency could be improved significantly, too. The treatment efficiency concerning COD is comparable.