Accumulation of hydrogen and its influence on the microstructure and mechanical properties of Kh18N10T steel

By the methods of thermal-desorption spectrometry and nuclear reactions, we study the processes of trapping, thermal desorption, and evolution of the profiles of distribution of deuterium ionically implanted with an energy of 12 keV into Kh18N10T steel at room temperature. The evolution of the microstructure of steel under the conditions of irradiation of samples with D₂⁺ ions up to doses of 1 · 10¹⁸ D/m²−2 · 10²² D/m² is studied by the method of electron microscopy. The regularities of changes in the mechanical properties of steel after irradiation are determined. __________ Translated from Fizyko-Khimichna Mekhanika Materialiv, Vol. 43, No. 5, pp. 117–121, September–October, 2007.     

High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities

The effect of phosphorus impurities on the electronic structure of silicon single crystals and SiO₂: Si nanocomposites is studied. The SiO₂: Si structures with phosphorus impurities that are annealed over 2 h at a temperature of 1000°C exhibit an increase in the photoluminescence peak related to Si nanocrystals. The experimentally determined densities of states in the valence and conduction bands of SiO₂: Si composites are in good agreement with the local electronic structure in the vicinity of silicon impurities that is calculated within the approximation of linear muffin-tin orbitals.     

Erbium ion electroluminescence in p ++/n +/n-Si:Er/n ++ silicon diode structures

Results of experimental studies of erbium ion electroluminescence in p ⁺⁺/n ⁺/n-Si:Er/n ⁺⁺ silicon diode structures grown by sublimation molecular-beam epitaxy are discussed. The distinctive feature of these structures is that the regions of electron flux formation of (n ⁺-Si) and impact excitation of erbium ions (n-Si:Er) are spaced. The influence of the n ⁺-Si layer thickness on electrical and electroluminescent properties of diodes was studied. It was shown that n ⁺-Si layer thinning causes the transformation of the structure breakdown mechanism from tunneling to avalanche. The dependence of the Er³⁺ ion electroluminescence on the thickness of the heavily doped n ⁺-Si region is bell-shaped. At the n ⁺-Si-layer doping level n ≈ 2 × 10¹⁸ cm^?3, the maximum electroluminescence intensity is attained at an n ⁺-Si layer thickness of ～23 nm.     

Simultaneous a posteriori detection and identification of a predetermined number of quasi-periodic fragments in a sequence based on their segments

An a posteriori (off-line) approach to the simultaneous detection and identification of quasi-periodic fragments in a numerical sequence using their segments is analyzed. The solution of the problem is proposed for the case when the number of the desired fragments is known. The following assumptions are made. (i) Each desired fragment of the numerical sequence coincides with an element of the given alphabet of the reference sequences that have equal lengths (i.e., number of elements). (ii) Only a segment (part) of the desired fragment can be processed; unprocessable parts of the fragment are interpreted as lost data. (iii) The numbers of the elements in the sequence that correspond to the beginning of the desired fragment and the boundaries of the segment in the fragment represent deterministic (rather than random) quantities; the boundaries of the segments are different for different fragments; and the desired fragments are quasi-periodic in the sequence. (iv) Gaussian uncorrelated noise impedes the observation of the sequence that contains quasi-periodic segments of the reference sequences. It is demonstrated that the essence of the problem under study lies in the verification of a set of hypotheses on the mean value of a random Gaussian vector (the power of this set exponentially increases with an increase in the dimension of the vector—the sequence length). An effective a posteriori algorithm that provides for maximum-likelihood detection and identification is validated. The estimates of the time and space complexity are related to the parameters of the problem. The results of the numerical simulation are presented. This work was supported by the Russian Foundation for Basic Research, project no. 03-01-00036 and 06-01-00058. Aleksandr V. Kel’manov. Born April 25, 1952. Graduated from Izhevsk State Technical University in 1974. Received candidate’s degree in 1980 and doctoral degree in 1994. Leading researcher of the Sobolev Institute of Mathematics, Siberian Division, Russian Academy of Sciences. Scientific interests: mathematical methods for pattern recognition; discrete optimization; effective algorithms for the analysis and recognition of random sequences; algorithms for the solution of applied problems; and methods and algorithms for the processing, recognition, and synthesis of voice signals. Author of more than 120 papers. Sergei A. Khamidullin. Born March 28, 1952. Graduated from Novosibirsk State University in 1974. Received candidate’s degree in 1997. Senior researcher of the Sobolev Institute of Mathematics, Siberian Division, Russian Academy of Sciences. Scientific interests: mathematical methods for pattern recognition; discrete optimization; effective algorithms for the analysis and recognition of random sequences; algorithms for the solution of applied problems; and methods and algorithms for the processing, recognition, and synthesis of voice signals. Author of more than 80 papers.     

The effect of charge relaxation on the electromagnetic radiation of an oscillating charged viscous drop

A dispersion equation for the capillary oscillations of a charged drop of incompressible liquid possessing a finite electric conductivity is derived with an allowance for the energy lost as a result of the electromagnetic wave emission. The magnitude of the electromagnetic radiation losses of the oscillating drop linearly increases with the electric conductivity and the surface mobility of charge carriers.     

Electrical characteristics of (<Emphasis Type="Italic">p</Emphasis>)3C-SiC-(<Emphasis Type="Italic">n</Emphasis>)6H-SiC heterojunctions

The electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors.