Ultrastructural studies of spermiogenesis in rabbit exposed to chronic fluoride toxicity

OBJECTIVE: To compare skinfold thickness measurements with bioelectrical impedance analysis (BIA) as a measure of body fat for use in a survey of children (the National Study of Health and Growth). DESIGN: Part cross-sectional, part repeated measurement study. SETTING: A junior school in Bath. SUBJECTS: 42 boys and 33 girls aged from 9 to 11 years. INTERVENTIONS: Measurements of BIA, height, weight, and triceps, biceps, subscapular and suprailiac skinfolds. RESULTS: All measurements were highly repeatable with intraclass correlation coefficients > 0.90. The level of agreement between estimates of percentage of body fat derived from prediction equations based on impedance or skinfold measurements respectively was poor: the mean difference (impedance estimate minus skinfold estimate) was 4.67% (95% range -3.47 to 12.82) for boys and 7.81% (95% range 1.27 to 14.34) for girls. The two estimates were found to correlate highly (r = 0.83 for boys and r = 0.81 for girls) because weight, used to convert estimates of fat-free mass derived from impedance to fat mass, was highly correlated with impedance and moderately highly correlated with skinfold thicknesses. The correlations of resistance (R) and (H)2/R with skinfold thicknesses were very low. There was a moderate correlation of R and H2/R with log(weight-for-height index), but lower than that of log(weight-for-height index) with each of the skinfolds. CONCLUSIONS: As currently available equations for converting impedance-based estimates of total body water to fat mass are not fully developed for use in children of varying ages, estimates of body fat calculated from skinfold thickness measurements remain preferable in epidemiological studies of children's health and growth.     

Impact of nonuniform graded dopant profile in polysilicon gate on gate leakage current

In a MOSFET, a nonuniform, graded vertical dopant profile in the polysilicon gate causes a potential drop at the polysilicon/oxide interface. In this paper, the effect of this potential drop on the gate leakage current has been evaluated for the first time. The extent of variations of this affected gate leakage current with gate oxide thickness, gate length, and gate and drain bias conditions have been assessed with device simulation for an nMOS at 0.13 /spl mu/m low-voltage process. The results provide a guideline to the severity of this effect from the point of view of device and circuit operation and standby power consumption.     

Time-domain measurements with the Hewlett-Packard network analyzerHP 8510 using the matrix pencil method

The generalized pencil of function (GPOF) method, also known as the matrix pencil method, is used to improve the resolution of HP 8510B network analyzer data in the time domain. This method provides for much higher resolution than the Fourier techniques. A comparison of the two methods is given for the example of the Beatty standard. The examples show that a parametric technique such as the GPOF can provide accurate and reliable results with a high degree of resolution even when the fast Fourier transform (FFT)-based technique fails     

A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

The current-voltage (I-V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films.