Extraction of interface states at emitter–base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation

Distribution of interface states at the emitter–base heterojunctions in heterostructure bipolar transistors (HBTs) is characterized by using current–voltage characteristics using sub-bandgap photonic excitation. Sub-bandgap photonic source with a photon energy E_ph which is less than the energy bandgap E_g (E_g,GaAs = 1.42, E_g,AlGaAs = 1.76 eV) of emitter, base, and collector of HBTs, is employed for exclusive excitation of carriers only from the interface states in the photo-responsive energy range at emitter–base heterointerface. The proposed method is applied to an Al_0.3Ga_0.7As/GaAs HBT (A_E = W_E × L_E = 250 × 100 μm²) with E_ph = 0.943 eV and P_opt = 3 mW. Extracted interface trap density D_it was observed to be D_it,max  4.2 × 10¹² eV⁻¹ cm⁻² at emitter–base heterointerface.     

Wi-Fi fingerprint using radio map model based on MDLP and euclidean distance based on the Chi squared test

Wireless Networks - The Wi-Fi fingerprint, which can be used on existing wireless networks, is one of the main indoor positioning techniques that utilizes the received signal strength (RSS). In...     

Effects of annealing temperature of aqueous solution-processed ZnO electron-selective layers on inverted polymer solar cells

We investigate the effects of ZnO annealing temperature (T_A) on the performance of inverted polymer solar cells with ZnO electron-selective layers deposited by spin coating aqueous solutions of an ammine-hydroxo zinc complex. The inverted solar cells based on poly(3-hexylthiophene):[6,6]-phenyl-C₆₁-butyric acid methyl ester with T_A as low as 80 °C exhibit power-conversion efficiencies of 3.6%, which is equal to those of devices with higher T_A. Characterizations of the ZnO films using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, grazing incidence wide-angle X-ray scattering, and optical transmittance measurements show that the abrupt improvement of device performance from T_A = 60 to 80 °C is due to the improvement of energy-level alignment arising from the increases in the relative amount and the crystallinity of ZnO.     

Recent Progress in Applications of the Cold Sintering Process for Ceramic–Polymer Composites

Ceramic–polymer composites are of interest for designing enhanced and unique properties. However, the processing temperature windows of sintering ceramics are much higher than that of compaction, extrusion, or sintering of polymers, and thus traditionally there has been an inability to cosinter ceramic–polymer composites in a single step with high amounts of ceramics. The cold sintering process is a low‐temperature sintering technology recently developed for ceramics and ceramic‐based composites. A wide variety of ceramic materials have now been demonstrated to be densified under the cold sintering process and therefore can be all cosintered with polymers from room temperature to 300 °C. Here, the status, understanding, and application of cold cosintering, with different examples of ceramics and polymers, are discussed. One has to note that these types of cold sintering processes are yet new, and a full understanding will only emerge after more ceramic–polymer examples emerge and different research groups build upon these early observations. The general processing, property designs, and an outlook on cold sintering composites are outlined. Ultimately, the cold sintering process could open up a new multimaterial design space and impact the field of ceramic–polymer composites.     

Recommendations from the commercialization of government-sponsoredtelecommunications R&D with multiple development cycles inKorea

A number of government-sponsored large-scale R&D projects in the telecommunications sector have been carried out in Korea. Among them is the time division exchange (TDX) project that lasted for more than 15 years. The project has two characteristics: the commercialization of government-sponsored R&D and the commercialization of R&D with multiple development cycles. This paper describes these characteristics of the project from various viewpoints: product development strategy, the role of each organization, success factors of each product, the classification of commercial products by commercialization model, and technology transfer strategies encouraging participation of manufacturing firms. We conclude with several recommendations     

Fine-sized LiNi0.8Co0.15Mn0.05O2 cathode powders prepared by combined process of gas-phase reaction and solid-state reaction methods

The Ni-rich precursor powders with spherical shape and filled morphologies were prepared by spray pyrolysis from the spray solution with citric acid, ethylene glycol and a drying control chemical additive. The precursor powders with controlled morphologies formed the LiNi_0.8Co_0.15Mn_0.05O₂ cathode powders with spherical shape and fine size by solid-state reaction with lithium hydroxide. However, the cathode powders prepared from the spray solution without additives had irregular morphologies and were large in size. The precursor powders with hollow and porous morphologies formed cathode powders with irregular and aggregated morphologies. The composition ratios of the nickel, cobalt and manganese components were maintained in the as-prepared, precursor and cathode powders. The initial discharge capacity of the LiNi_0.8Co_0.15Mn_0.05O₂ cathode powders with spherical shape and fine size tested at a temperature of 55 °C under a constant current density of 0.5 C was 215 mAh g⁻¹. The discharge capacity of the LiNi_0.8Co_0.15Mn_0.05O₂ cathode powders decreased to 81% of the initial value after 30 cycles.     

High Areal Capacitance of N‐Doped Graphene Synthesized by Arc Discharge

The lack of cost effective, industrial‐scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N‐doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N‐doped graphene (1–1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (≈3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N‐doped graphene material exhibits a remarkable area normalized capacitance of 63 µF cm^?2. The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N‐doped graphene flakes produced by arc discharge in graphene‐based supercapacitors, along with well‐studied active exfoliated graphene and reduced graphene oxide.     

W-band divide-by-3 frequency divider using 0.1 /spl mu/m InAlAs/InGaAs metamorphic HEMT technology

A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.