Strain‐Visualization with Ultrasensitive Nanoscale Crack‐Based Sensor Assembled with Hierarchical Thermochromic Membrane

As eidetic signal recognition has become important, displaying mechanical signals visually has imposed huge demands for simple readability and without complex signal processing. Such visualization of mechanical signals is used in delicate urgent medical or safety‐related industries. Accordingly, chromic materials are considered to facilitate visualization with multiple colors and simple process. However, the response and recovery time is very long, such that rapid regular signals are unable to be detected, i.e., physiological signals, such as respiration. Here, the simple visualization of low strain ≈2%, with ultrasensitive crack‐based strain sensors with a hierarchical thermochromic layer is suggested. The sensor shows a gradient color change from red to white color in each strain, which is attributed to the hierarchical property, and the thermal response (recovery) time is dramatically minimized within 0.6 s from 45 to 37 °C, as the hierarchical membrane is inspired by termite mounds for efficient thermal management. The fast recovery property can be taken advantage of in medical fields, such as monitoring regular respiration, and the color changes can be delicately monitored with high accuracy by software on a mobile phone.     

A Novel Uplink MIMO Transmission Scheme in a Multicell Environment

Uplink multiple-input multiple-output (MIMO) transmission scheme is developed for time division duplex (TDD) systems in a multicell environment. We propose a precoding scheme that maximizes the total achievable rate and works in the decentralized manner with only locally available channel state information (CSI) at each transmitter. We first establish and solve a decentralized optimization problem for the case of multiple-input single-output (MISO) channels, introducing a new precoding design metric called signal to generated interference plus noise ratio (SGINR). By extending the result to general MIMO channels, we propose an SGINR-based precoding scheme where the number of transmit streams is selected adaptively to the surrounding environments. Simulation results confirm that the proposed precoding scheme offers significant throughput enhancement in multicell environments.     

Energy Loss Mechanism in Organic and Inorganic Light-Emitting Diodes

We report that there exists a similar energy loss mechanism in fluorescent/phosphorescent organic light-emitting diodes (F/P OLEDs) and inorganic semiconductor optoelectronic devices [1310-nm InGaAsP-InP superluminescent diodes (SLDs)]. The loss of energy in inorganic SLDs based on thickness-altered asymmetric multiple quantum-well (QW) structures occurs depending sensitively on the sequence of QWs, an analogous behavior also observed in F/P OLEDs depending on the sequence of phosphorescent dopants for different colors. It is shown that such an energy (power) loss is evitable by placing long-wavelength QWs near the p-side in inorganic SLDs and similarly long-wavelength phosphors near the hole-transporting layer in F/P OLEDs.     

Integrated optical waveguide polarizer based on photobleaching-induced birefringence in an electrooptic polymer

A TE-pass waveguide polarizer is fabricated by utilizing the photobleaching-induced birefringence at room temperature in an electrooptic polymer. The polarizer consists of the photobleached waveguide supporting only TE mode, which is integrated in the middle of the etched rib waveguide supporting both TE and TM modes. It has a simple structure and requires no high temperature process like poling. The measured polarization extinction ratio is about 21 dB at the wavelengths of 1.3 and 1.55 /spl mu/m, and the estimated excess loss is about 0.4 dB.     

10 Gbit/s transmission over 50 km nonzero dispersion-shifted fibreusing 1.3 μm directly modulated uncooled transmitters

A 1.3 μm uncooled transmitter with wide-open eye diagrams at laser temperatures of 20, 50, and 85°C is presented. Using this transmitter, it is demonstrated that 10 Gbit/s transmission is possible over a 50 km nonzero dispersion-shifted Lucent TrueWave-RS fibre. This result is compared with transmission over a 55 km standard singlemode fibre     

Optical packet switching in core networks: between vision andreality

The research on optical packet switching (OPS) has witnessed considerable progress in the 1990s. We examine the future potential of OPS in the core network by discussing this switching approach and the current status of a number of its enabling technologies. Many of these technologies are still in the stage of research and experimentation. We see that optical packet switching may be deployed in the long-term future subject to satisfaction of three main conditions/developments. First, additional technological developments have to take place to overcome remaining implementation challenges while making OPS cost-effective to deploy. Second, a rational migration scenario of the network toward gradual deployment of packet-based optical switching approaches should exist. Finally, carriers have to become more interested in packet-based optical switching solutions     

Hybrid ring coupler for W-band MMIC applications using MEMS technology

The hybrid ring coupler was designed and fabricated on a GaAs substrate using surface micromachining techniques, which adopted dielectric-supported air-gapped microstrip line (DAML) structure. The fabrication process of DAML is compatible with the standard monolithic microwave integrated circuit (MMIC) techniques, and the hybrid ring coupler can be simply integrated into a plane-structural MMIC. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of 3.57 /spl plusmn/ 0.22dB and the transmission loss of 3.80 /spl plusmn/ 0.08dB across the measured frequency range of 85 to 105GHz. The isolation characteristics and output phase differences are -34dB and 180/spl plusmn/1/spl deg/, at 94GHz, respectively.     

The Effect of Gate‐Dielectric Surface Energy on Pentacene Morphology and Organic Field‐Effect Transistor Characteristics

The effects of the surface energy of polymer gate dielectrics on pentacene morphology and the electrical properties of pentacene field‐effect transistors (FETs) are reported, using surface‐energy‐controllable poly(imide‐siloxane)s as gate‐dielectric layers. The surface energy of gate dielectrics strongly influences the pentacene film morphology and growth mode, producing Stranski–Krastanov growth with large and dendritic grains at high surface energy and three‐dimensional island growth with small grains at low surface energy. In spite of the small grain size (≈ 300 nm) and decreased ordering of pentacene molecules vertical to the gate dielectric with low surface energy, the mobility of FETs with a low‐surface‐energy gate dielectric is larger by a factor of about five, compared to their high‐surface‐energy counterparts. In pentacene growth on the low‐surface‐energy gate dielectric, interconnection between grains is observed and gradual lateral growth of grains causes the vacant space between grains to be filled. Hence, the higher mobility of the FETs with low‐surface‐energy gate dielectrics can be achieved by interconnection and tight packing between pentacene grains. On the other hand, the high‐surface‐energy dielectric forms the first pentacene layer with some voids and then successive, incomplete layers over the first, which can limit the transport of charge carriers and cause lower carrier mobility, in spite of the formation of large grains (≈ 1.3 μm) in a thicker pentacene film.     

Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons

This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short‐circuit current, open‐circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short‐circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a‐Si : H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests. Copyright © 2012 John Wiley & Sons, Ltd.