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51.
The structure of glasses based on fluorides of alkaline-earth metals, aluminum, and europium, in which aluminum fluoride is partially replaced by aluminum nitride, is investigated by 151Eu Mössbauer spectroscopy. It is found that these glasses contain europium atoms in two oxidation states (+2 and +3). The isomer shifts of the Mössbauer spectra of Eu3+ and Eu2+ ions entering into the composition of the fluoride glasses are somewhat different from the isomer shifts of the Mössbauer spectra of EuF3 and EuF2 compounds. This difference is explained by the effect of the alkaline-earth metal and aluminum atoms (not bound directly to the europium atoms) on the electron density at the 151Eu nuclei. The broadening of the Mössbauer spectra of the Eu2+ ions in the fluoride glasses is explained by the nonuniform isomer shift.  相似文献   
52.
53.
This paper presents experimental data on the solubility of Yb(III) compounds in POCl3–MCl x , SOCl2–MCl x , and SO2Cl2–GaCl3 binary aprotic solvents (where MClx is a Lewis acid). We have measured the absorption and luminescence spectra of Yb3+ in the solutions thus prepared. Liquid POCl3–MCl4–Yb3+ (M = Zr or Sn), SOCl2–GaCl3–Yb3+, and SO2Cl2–GaCl3–Yb3+ gain media with [Yb3+] > 0.2 mol/L and an Yb3+ luminescence quantum yield η > 0.5 for diode-pumped lasers have been prepared for the first time.  相似文献   
54.
Two-electron exchange between neutral and doubly ionized negative-U tin centers in PbS and PbSe has been studied by Mössbauer emission spectroscopy. The activation energy for this process in PbS is 0.11(2) eV, which is comparable to the depth of tin levels in the band gap of PbS, whereas the activation energy for this process in PbSe, 0.05(1) eV, is comparable to the correlation energy of negative-U donor tin centers in PbSe. The exchange occurs through simultaneous transfer of two electrons and involves valence band states.  相似文献   
55.
The influence of the chemical nature of the local environment of Eu3+ ions on the parameters of luminescence of these centers in glasses of the (BaGeO3)1 ? x ? y (Al2O3) x (0.45CaF2 · 0.55MgF2) y (x = 0.25, y = 0; x = 0.17, y = 0.17; x = 0.15, y = 0.22; x = 0.07, y = 37.00; x = 0, y = 0.45) system is investigated. The oxidation state of europium atoms and the degree of homogeneity of their local environment in the glasses are determined using 151Eu Mössbauer spectroscopy.  相似文献   
56.
It is shown by Mössbauer spectroscopy of the isotope 119Sn that an isovalent tin impurity in PbS1?z Tez solid solutions is a two-electron donor with a negative correlation energy, where the energy levels associated with tin centers are situated against the background of the valence band continuum. The Hubbard energy U is estimated for impurity tin atoms in PbS1?z Tez (|U|>0.2 eV), which is found to be substantially higher than for analogous tin centers in PbS1?z Sez solid solutions (|U|=0.058 eV).  相似文献   
57.
Thin ferroelectric Pb(Zr0.48Ti0.52)O3 lead zirconate titanate films have been prepared on platinized silicon substrates via chemical solution deposition. The starting film-forming solutions were prepared by reacting lead acetate with Ti and Zr alkoxides in 2-methoxyethanol. The electrical properties of the films were shown to depend on the Ti and Zr alkoxide precursors used in synthesis. The nature of the zirconium alkoxide had the strongest effect on the properties of the films. The best properties were obtained with zirconium n-propoxide.  相似文献   
58.
Glass Physics and Chemistry - Emission Mössbauer spectroscopy on 119mmSn(119mSn), 119Sb(119mSn), 119mTe(119mSn), 125mTe(125Te), 125Sb(125Te), 125Sn(125Te), and 129mTe(129I) isotopes is used as...  相似文献   
59.
Relations that make it possible to use an experimentally measured temperature dependence of carrier concentration to determine the Hubbard energy U and temperature dependence of the Fermi level F for two-electron tin centers in lead selenide are derived. A study of Pb1?x?ySnxNaySe solid solutions shows that their Fermi level in the temperature region 100–600 K lies below the valence band top E v and that their F(T) dependences are linear, with extrapolation to T = 0 yielding E V ?F = 210±10 meV. The Hubbard energy of the two-electron tin centers in PbSe is found to be U = ?80±20 meV.  相似文献   
60.
Using the Mössbauer spectroscopy method for the 119Sn isotope the state of tin impurity atoms in crystalline c-Si and amorphous a-Si silicon is studied. If tin concentration in c-Si does not exceed 2 × 1019 atoms/cm3 then tin enters the lattice as substitutional impurity forming sp 3 hybrid system of chemical bonds. There is discussed a model that describes tin impurity atom as an isotopic impurity. If tin concentration in c-Si exceeds the value, associates of tin impurity atoms are formed in the structure of the doped semiconductor. There are studied the electrical and optical properties of tin doped films of thermally spray-coated amorphous silicon. It is shown that in contrast to the crystalline silicon where tin is an electrically inactive substitution impurity, in vacuum deposited amorphous silicon it produces an acceptor band near the valence band and a fraction of the tin atoms becomes charged.  相似文献   
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