Instrument for flatness checks on large workpieces

Conclusion The IS41M provides high accuracy in checking large surfaces for planarity deviation, and also during equipment installation. It contains no components requiring high-precision manufacture. The instrument is convenient to use and can be prepared for operation in not more than 10–15 min. The data do not need complicated processing and provide direct information on the deviation from planarity at the relevant point.Components of a machine can be set up in a single plane under direct control of the instrument, and the surface can be oriented at any angle in space.The instrument is suitable for use in the laboratory and under plant conditions and even in the open air, provided there is no precipitation.Translated from Izmeritel'naya Tekhnika, No. 8, pp. 48–49, August, 1978.     

X-ray fluorescence analysis of the composition of As-Ge-Se glasses and films

The external standard technique is developed for the quantitative determination of the content of arsenic, germanium, and selenium in As _x (Ge _y Se_{1 ? y} )_{1 ? x} glassy alloys by the X-ray fluorescence spectroscopy method. It is demonstrated that the proposed approach allows the glass compositions to be quantitatively determined with an accuracy of ±0.0002 for both x and y.     

Sorption of NbF5 from UF6-containing gases on granulated sodium and magnesium fluorides

The capacity for NbF₅ of granulated sodium fluoride at 100 and 400°C and of magnesium fluoride at 125°C was determined. The choice of the sorbents and temperatures is governed by the possibility of using the sorbents at these temperatures for decontamination of UF₆ from fission product impurities in reprocessing of spent nuclear fuel by the fluoride volatility technology. The presence of UF₆ in the gases does not appreciably affect the sorbent capacities. Sodium fluoride at 400°C is suitable for decontamination of UF₆ from NbF₅ as one of impurities.     

Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses

Semiconductors - The formation of antisite defects in Ge20Te80 and Ge15As4Te81 vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by...     

Variation in the State of 119mSn Impurity Atoms in PbTe during the Establishment of the Radioactive Equilibrium of 119mTe/119Sb Isotopes

Semiconductors - The parameters of the emission Mössbauer spectra of PbTe using the 119mSn daughter isotope with different parent nuclei 119mmSn, 119Sb, and 119mTe are compared. This...