Study on the c-axis preferred orientation of ZnO film on various metal electrodes

ZnO thin film was deposited on various metal electrodes by reactive sputtering, and c-axis preferred orientation of the film has been studied. ZnO, which has high piezoelectricity, is promising for oscillators or filter devices such as surface acoustic wave (SAW) device, gas sensor, and film bulk acoustic resonator (FBAR). But, for the application of ZnO film for these devices, the film should be grown with c-axis normal to the electrode. In this study, Pt, Al, and Au were deposited on Si wafer, and the surface roughness and crystal structure of the ZnO film on the electrode were investigated using AFM, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Columnar structures of ZnO films were grown with c-axis normal to all electrodes, and among them Pt electrode showed the highest preferred orientation of ZnO film.     

Strength of Al-Zn-Mg-Cu matrix composite reinforced with SiC particles

The AA7075 alloys reinforced with SiC and without SiC particles were fabricated by a pressureless infiltration method, and then, their tensile properties and microstructures were analyzed. The spontaneous infiltration of molten metal at 800 °C for 1 hour under a nitrogen atmosphere made it possible to fabricate 7075 Al matrix composite reinforced with SiC, as well as a control 7075 Al without SiC. A significant strengthening even in the control alloy occurred due to the formation of in-situ AlN particle even without an addition of SiC particles. Composite reinforced with SiC particles exhibited higher strength values than the control alloy in all aging conditions (underaged (UA), peak-aged (PA), and overaged (OA)), as well as a solution treated condition. Spontaneous infiltration was further prompted owing to the combined effect of both Mg and Zn. This may lead to an enhancement of wetting between the molten alloy and the reinforcement. Consequently, strength improvement in a composite may be attributed to good bond strength via enhancement of wetting. The grain size of the control alloy is greatly decreased to about 2.5 μm compared to 10 μm for the commercial alloy. In addition, the grain size in the composite is further decreased to about 2 μm. These grain refinements contributed to strengthening of the control alloy and the composite.     

Electrical properties and stability of Dy2O3-doped ZnO–Pr6O11-based varistors

The electrical properties and DC accelerated aging characteristics of ZnO–Pr₆O₁₁-based varistors were investigated with various Dy₂O₃ contents and sintering times. It was found that the Dy₂O₃ content and sintering time significantly affected electrical properties and their stability. The nonlinear exponent with increasing Dy₂O₃ content varied with ∨-shaped, reaching maximum of 58.6 at 1.0 mol% Dy₂O₃ for varistors sintered for 1 h and with ∧-shaped, reaching maximum of 46.3 at 0.5 mol% Dy₂O₃ for 2 h. The leakage current was in the range of 0.1–1.1 μA for varistors sintered for 1 h and 0.3–2.4 μA for 2 h. The increase of sintering time led to lowering of nonlinearity. The varistors with 0.5 mol% Dy₂O₃ sintered for 2 h exhibited the good stability, under DC stress of 0.95 V _{1 mA}/150 °C/24 h.     

Strong Diffie-Hellman-DSA Key Exchange

To provide authentication to the Diffie-Hellman key exchange, a few integrated key exchange schemes which provide authentication using the DSA signature have been proposed in the literature. In this letter we point out that all of the previous Diffie-Hellman-DSA schemes do not provide security against session state reveal attacks. We also suggest a strong Diffie-Hellman-DSA scheme providing security against session state reveal attacks as well as forward secrecy and key independence     

Formation of C4 species in the deactivation of a Pd/SiO2 catalyst during the selective hydrogenation of acetylene

The deactivation characteristics of Pd/SiO₂ in the selective hydrogenation of acetylene were correlated with changes in the amount of the C4 species produced. The amounts of butenes produced changed in parallel with the catalyst activity, indicating that the rate limiting step for butene production was the same as that for acetylene hydrogenation. On the other hand, the amount of 1,3-butadiene produced changed, showing a maximum with catalyst deactivation because 1,3-butadiene is an intermediate in the sequential reaction process which involves both the production and consumption of 1,3-butadiene. This was verified by a simultaneous TG/reaction experiment showing that 1,3-butadiene was a precursor of green oil. The catalyst showed a self-regenerative behavior in its activity and the amounts of C4 species produced during the early stage of deactivation because two opposite factors, which contributed to either the lowering or the promotion of activity, were involved in the process. A specific type of polymer species, produced during the initial period of deactivation, is proposed to be responsible for the promotion of catalyst activity.     

A study on UV-curable coatings for HD-DVD: Primer and top coats

This study relates to the development of coatings for optical discs in high-density digital versatile disc systems (HD-DVD or blue lay disk) that use a high numerical aperture of 0.85 at 405 nm wavelength and have a protective top layer over a primer layer for protection against damage and dust. Ultraviolet-curable raw materials of two acrylic monofunctional monomers ( isobornylacrylate, IBA and tetrahydrofurfurylacrylate, THFA) and two kinds of urethaneacrylate oligomers (OUMD and OUME) have been easily mixed with photoinitiators. Curing rate of these materials was characterized by FT-IR. In case of top coats, VTES (vinyltriethoxysilane) and acrylic acid were added to enhance the abrasion resistance. These two kinds of UV-curable resinous materials having no solvent were synthesized and investigated as means for making a blue ray disk having good optical and mechanical properties. In addition, dynamic characteristics including reflectivity, fluctuation of RF signal and noise level were also investigated.     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.     

Cross-phase-modulation-induced nonlinear phase noise in WDM direct-detection DPSK systems

In direct-detection differential-phase-shift-keying (DPSK) systems, the signal-spontaneous emission beat noise introduces phase noise due to Kerr nonlinearity. In wavelength-division-multiplexed (WDM) systems, this nonlinear phase noise comes not only from the channel itself through self-phase modulation (SPM) but also from the other channels through cross-phase modulation (XPM). In this paper, we theoretically and experimentally investigate XPM-induced nonlinear phase noise. We calculate the performance degradation of DPSK systems caused by XPM-induced nonlinear phase noise in addition to SPM-induced phase noise and experimentally verify it using a 600-km nonzero-dispersion-shifted-fiber link.