Functionality of Dual‐Phase Lithium Storage in a Porous Carbon Host for Lithium‐Metal Anode

Lithium (Li) metal is regarded as the most attractive anode material for high‐energy Li batteries, but it faces unavoidable challenges—uncontrollable dendritic growth of Li and severe volume changes during Li plating and stripping. Herein, a porous carbon framework (PCF) derived from a metal–organic framework (MOF) is proposed as a dual‐phase Li storage material that enables efficient and reversible Li storage via lithiation and metallization processes. Li is electrochemically stored in the PCF upon charging to 0 V versus Li/Li⁺ (lithiation), making the PCF surface more lithiophilic, and then the formation of metallic Li phase can be induced spontaneously in the internal nanopores during further charging below 0 V versus Li/Li⁺ (metallization). Based on thermodynamic calculations and experimental studies, it is shown that atomically dispersed zinc plays an important role in facilitating Li plating and that the reversibility of Li storage is significantly improved by controlled nanostructural engineering of 3D porous nanoarchitectures to promote the uniform formation of Li. Moreover, the MOF‐derived PCF does not suffer from macroscopic volume changes during cycling. This work demonstrates that the nanostructural engineering of porous carbon structures combined with lithiophilic element coordination would be an effective approach for realizing high‐capacity, reversible Li‐metal anodes.     

Optical properties of Si0.8Ge0.2/Si multiple quantum wells

The optical property was studied on the Si_0.8Ge_0.2/Si strained multiple quantum well (MQW) structure grown using ultra-high vacuum chemical vapor deposition (UHV-CVD). Three peaks are observed in Raman spectrum, which are located at about 510, 410, and 300 cm⁻¹, corresponding to the vibration of Si–Si, Si–Ge, and Ge–Ge phonons, respectively. The photoluminescence (PL) spectrum originates from the radiative recombinations both from the Si substrate and the Si_0.8Ge_0.2/Si MQW. For Si_0.8Ge_0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent (PC) spectrum were preliminarily assigned to electron–heavy hole (e–hh) and electron–light hole (e–lh) fundamental excitonic transitions.     

Correlated Quantum Phenomena of Spin–Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3 Based Artificial Superlattices

Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d perovskite oxide superlattices, in which the spin–orbit coupling plays a significant role compared with conventional 3d oxide superlattices. Modulations in crystal structures with octahedral distortion, phonon engineering, electronic structures, spin orderings, and dimensionality control are discussed for 4d oxide superlattices. Atomic and magnetic structures, J_eff = 1/2 pseudospin and charge fluctuations, and the integration of topology and correlation are discussed for 5d oxide superlattices. This review provides insights into how correlated quantum phenomena arise from the deliberate design of superlattice structures that give birth to novel functionalities.     

Morphology Associated Positive Correlation between Carrier Mobility and Carrier Density in Highly Doped Donor–Acceptor Conjugated Polymers

Molecular doping in conjugated polymers (CPs) has recently received intensive attention for its potential to achieve high electrical conductivity in organic thermoelectric materials. In particular, it affects not only the carrier density n but also the carrier mobility µ because high degree of molecular doping changes the morphological properties. Herein, the effect of molecular doping in CP thin films on the pathways and mechanisms of charge transport is investigated, which govern the µ-n relationship. Two representative donor–acceptor type CPs with similar µ but different molecular assembly in an undoped state, that is poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno[3,2-b]thiophene)] (DPPDTT) and indacenodithiophene-co-benzothiadiazole (IDTBT), are prepared. Heavy doping with iron chloride (FeCl₃) induced DPPDTT with highly crystalline edge-on orientation to increase its µ up to 19.6 cm² V⁻¹ s⁻¹, whereas IDTBT with irregular intermolecular stacking showed little change in µ. It is revealed that this different µ-n relationship is highly attributed to the initial molecular ordering of CP films. The charge transport mechanism also becomes significantly different: both coherent and incoherent transports are observed in the doped DPPDTT, whereas incoherent transport is only found in the doped IDTBT. This study suggests guidelines for enhancing charge transport of CPs under doping in terms of structural disorder.     

Indicator Sensor Development and Fuel Cell Degradation Imaging

Although extensive research has been conducted, understanding the exact phenomena occurring during the operation of polymer electrolyte fuel cells (PEFCs) remains difficult. This research attempted to identify new reasons for the reduced performance of PEFC using an imaging technique. To begin with, H⁺ and OH⁻ indicator sensors, which display red, blue, and green values (RGB) using digital microscopes, are developed and attached to each electrode of a membrane electrode assembly to enable quantitative analysis of ion generation. The proposed reaction in the fuel cell can be confirmed, and various reactions occurring in the electrode can be examined using this approach. In particular, H⁺ is generated at the anode and cathode of the anion exchange membrane fuel cell, which is found to be a major cause of performance deterioration.     

A high-yield fabrication process for silicon neural probes

There is a great need for silicon microelectrodes that can simultaneously monitor the activity of many neurons in the brain. However, one of the existing processes for fabricating silicon microelectrodes-reactive-ion etching in combination with anisotropic KOH etching-breaks down at the wet-etching step for device release. Here we describe a modified wet-etching sidewall-protection technique for the high-yield fabrication of well-defined silicon probe structures, using a Teflon shield and low-pressure chemical vapor deposition (LPCVD) silicon nitride. In the proposed method, a micro-tab holds each individual probe to the central scaffold, allowing uniform anisotropic KOH etching. Using this approach, we obtained a well-defined probe structure without device loss during the wet-etching process. This simple method yielded more accurate fabrication and an improved mechanical profile.     

Large-Scale Synthesis of Graphene Films by Joule-Heating-Induced Chemical Vapor Deposition

We report large-area synthesis of few-layer graphene films by chemical vapor deposition (CVD) in a cold-wall reactor. The key feature of this method is that the catalytic metal layers on the SiO₂/Si substrates are self-heated to high growth temperature (900°C to 1000°C) by high-current Joule heating. Synthesis of high-quality graphene films, whose structural and electrical characteristics are comparable to those grown by hot-wall CVD systems, was confirmed by transmission electron microscopy images, Raman spectra, and current–voltage analysis. Optical transmittance spectra of the graphene films allowed us to estimate the number of graphene layers, which revealed that high-temperature exposure of Ni thin layers to a carbon precursor (CH₄) was critical in determining the number of graphene layers. In particular, exposure to CH₄ for 20 s produces very thin graphene films with an optical transmittance of 93%, corresponding to an average layer number of three and a sheet resistance of ~600 Ω/square.