Highly stable optical add/drop multiplexer using polarization beam splitters and fiber Bragg gratings

We demonstrate a novel wavelength-division add/drop multiplexer employing fiber Bragg gratings and polarization beam splitters. The multiplexer is easy to fabricate without any special technique such as UV trimming, and yet shows very stable performance with less than 0.3-dB crosstalk power penalty in a 0.8-nm-spaced, 2.5-Gb/s-per-channel wavelength-division multiplexing (WDM) transmission system.     

Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by, combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (t/sub p-CBL/), and a doping concentration (n/sub p-CBL/) of the p-GaAs current-blocking layer (CBL) were determined to be W=1.2 /spl mu/m, t/sub p-CBL/=2 /spl mu/m, and n/sub p-CBL/=1/spl times/10/sup 18/ cm/sup -3/. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.     

VLSI array algorithms and architectures for RSA modularmultiplication

We present two novel iterative algorithms and their array structures for integer modular multiplication. The algorithms are designed for Rivest-Shamir-Adelman (RSA) cryptography and are based on the familiar iterative Horner's rule, but use precalculated complements of the modulus. The problem of deciding which multiples of the modulus to subtract in intermediate iteration stages has been simplified using simple look-up of precalculated complement numbers, thus allowing a finer-grain pipeline. Both algorithms use a carry save adder scheme with module reduction performed on each intermediate partial product which results in an output in carry-save format. Regularity and local connections make both algorithms suitable for high-performance array implementation in FPGA's or deep submicron VLSI. The processing nodes consist of just one or two full adders and a simple multiplexor. The stored complement numbers need to be precalculated only when the modulus is changed, thus not affecting the performance of the main computation. In both cases, there exists a bit-level systolic schedule, which means the array can be fully pipelined for high performance and can also easily be mapped to linear arrays for various space/time tradeoffs     

CDMA Mobile System Testbed and Field Test

This paper briefly explains the configuration of CDMA Mobile System (CMS) test bed. The measured fading and delay results of CDMA signal in Taejon area are shown. In comparison to other cellular systems, there are more parameters in the CDMA systems that affect system performance and capacity. We performed the optimization test of the selected parameters and present the effect of each parameter on the performance. This paper presents the capacity and performance test results of CMS. The capacity test was performed on ETRI site of three sectors in Taejon area. The performance tests include call completion rate, busy hour call attempt, and the delay characteristics of voice.     

A 60 GHz Medium Power Amplifier for Radio‐over‐Fiber System

We present the design and fabrication of a 60 GHz medium power amplifier monolithic microwave integrated circuit with excellent gain‐flatness for a 60 GHz radio‐over‐fiber system. The circuit has a 4‐stage structure using microstrip coupled lines instead of metal‐insulator‐metal capacitors for unconditional stability of the amplifier and yield enhancement. The gains of each stage of the amplifier are modified to provide broadband characteristics of input/output matching for the first and fourth stages and to achieve higher gains for the second and third stages to improve the gain‐flatness of the amplifier for wideband.     

Nonfullerene Electron Transporting Material Based on Naphthalene Diimide Small Molecule for Highly Stable Perovskite Solar Cells with Efficiency Exceeding 20%

This study reports a new nonfullerene electron transporting material (ETM) based on naphthalene diimide (NDI) small molecules for use in high‐performance perovskite solar cells (PSCs). These solar cells simultaneously achieve high power conversion efficiency (PCE) of over 20% and long‐term stability. New NDI‐ID (N,N′‐Bis(1‐indanyl)naphthalene‐1,4,5,8‐tetracarboxylic diimide) consisting of an N‐substituted indane group having simultaneous alicyclic and aromatic characteristics is synthesized by a low‐cost, one‐step reaction, and facile purification method. The partially flexible characteristics of an alicyclic cyclopentene group on indane groups open the possibility of low‐temperature solution processing. The conformational rigidity and aromaticity of phenyl and alicyclic groups contribute to high temporal stability by strong secondary bonds. NDI‐ID has herringbone packed semiconducting NDI cores that exhibit up to 0.2 cm² V^?1 s^?1 electron mobility in field effect transistors. The inverted PSCs based on CH(NH₂)₂PbI_3–xBr_x with NDI‐ID ETM exhibit very high PCEs of up to 20.2%, which is better than that of widely used PCBM (phenyl‐C61‐butyric acid methyl ester) ETM‐based PSCs. Moreover, NDI‐ID‐based PSCs exhibit very high long‐term temporal stability, retaining 90% of the initial PCE after 500 h at 100 °C with 1 sun illumination without encapsulation. Therefore, NDI‐ID is a promising ETM for highly efficient, stable PSCs.     

All‐Solution‐Processed Indium‐Free Transparent Composite Electrodes based on Ag Nanowire and Metal Oxide for Thin‐Film Solar Cells

Fully solution‐processed Al‐doped ZnO/silver nanowire (AgNW)/Al‐doped ZnO/ZnO multi‐stacked composite electrodes are introduced as a transparent, conductive window layer for thin‐film solar cells. Unlike conventional sol–gel synthetic pathways, a newly developed combustion reaction‐based sol–gel chemical approach allows dense and uniform composite electrodes at temperatures as low as 200 °C. The resulting composite layer exhibits high transmittance (93.4% at 550 nm) and low sheet resistance (11.3 Ω sq^‐1), which are far superior to those of other solution‐processed transparent electrodes and are comparable to their sputtered counterparts. Conductive atomic force microscopy reveals that the multi‐stacked metal‐oxide layers embedded with the AgNWs enhance the photocarrier collection efficiency by broadening the lateral conduction range. This as‐developed composite electrode is successfully applied in Cu(In_1‐x,Ga_x)S₂ (CIGS) thin‐film solar cells and exhibits a power conversion efficiency of 11.03%. The fully solution‐processed indium‐free composite films demonstrate not only good performance as transparent electrodes but also the potential for applications in various optoelectronic and photovoltaic devices as a cost‐effective and sustainable alternative electrode.