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91.
Effects of buried oxide thickness on short-channel effect of LOCOS-isolated thin-film SOI n-MOSFETs have been investigated. Devices fabricated on SOI substrate with thin (100 nm) buried oxide have smaller roll-off of threshold voltage than those fabricated on SOI substrate with thick (400 nm) buried oxide. This is caused by a different boron concentration at the silicon film that results from the difference of stress with the buried oxide thickness. In the case of thin buried oxide, higher volumetric expansion of the field oxide causes higher stress at the interface between the silicon film and the surrounding oxide, including field and buried oxide, which prevents boron atoms from diffusing beyond the interface  相似文献   
92.
Wearable strain sensors are widely researched as core components in electronic skin. However, their limited capability of detecting only a single axial strain, and their low sensitivity, stability, opacity, and high production costs hinder their use in advanced applications. Herein, multiaxially highly sensitive, optically transparent, chemically stable, and solution‐processed strain sensors are demonstrated. Transparent indium tin oxide and zinc oxide nanocrystals serve as metallic and insulating components in a metal–insulator matrix and as active materials for strain gauges. Synergetic sensitivity‐ and stability‐reinforcing agents are developed using a transparent SU‐8 polymer to enhance the sensitivity and encapsulate the devices, elevating the gauge factor up to over 3000 by blocking the reconnection of cracks caused by the Poisson effect. Cross‐shaped patterns with an orthogonal crack strategy are developed to detect a complex multiaxial strain, efficiently distinguishing strains applied in various directions with high sensitivity and selectivity. Finally, all‐transparent wearable strain sensors with Ag nanowire electrodes are fabricated using an all‐solution process, which effectively measure not only the human motion or emotion, but also the multiaxial strains occurring during human motion in real time. The strategies can provide a pathway to realize cost‐effective and high‐performance wearable sensors for advanced applications such as bio‐integrated devices.  相似文献   
93.
Controlling the interfacial properties between the electrode and active layer in organic field‐effect transistors (OFETs) can significantly affect their contact properties, resulting in improvements in device performance. However, it is difficult to apply to top‐contact‐structured OFETs (one of the most useful device structures) because of serious damage to the organic active layer by exposing solvent. Here, a spontaneously controlled approach is explored for optimizing the interface between the top‐contacted source/drain electrode and the polymer active layer to improve the contact resistance (RC). To achieve this goal, a small amount of interface‐functionalizing species is blended with the p‐type polymer semiconductor and functionalized at the interface region at once through a thermal process. The RC values dramatically decrease after introduction of the interfacial functionalization to 15.9 kΩ cm, compared to the 113.4 kΩ cm for the pristine case. In addition, the average field‐effect mobilities of the OFET devices increase more than three times, to a maximum value of 0.25 cm2 V?1 s?1 compared to the pristine case (0.041 cm2 V?1 s?1), and the threshold voltages also converge to zero. This study overcomes all the shortcomings observed in the existing results related to controlling the interface of top‐contact OFETs by solving the discomfort of the interface optimization process.  相似文献   
94.
For an adaptive cruise control (ACC) stop‐and‐go system in automotive applications, three radar sensors are needed because two 24 GHz short range radars are used for object detection in an adjacent lane, and one 77 GHz long‐range radar is used for object detection in the center lane. In this letter, we propose a single sensor‐based 24 GHz radar with a detection capability of up to 150 m and ±30° for an ACC stop‐and‐go system. The developed radar is highly integrated with a high gain patch antenna, four channel receivers with GaAs RF ICs, and back‐end processing board with subspace based digital beam forming algorithm.  相似文献   
95.
Soft features in electronic devices have provided an opportunity of gleaning a wide spectrum of intimate biosignals. Lack of data processing tools in a soft form, however, proclaims the need of bulky wires or low‐performance near‐field communication externally linked to a “rigid” processor board, thus tarnishing the true meaning of “soft” electronics. Furthermore, although of rising interest in stretchable hybrid electronics, lack of consideration in multilayer, miniaturized design and system‐level data computing limits their practical use. The results presented here form the basis of fully printable, system‐level soft electronics for practical data processing and computing with advanced capabilities of universal circuit design and multilayer device integration into a single platform. Single droplet printing‐based integration of rigid islands and core–shell vertical interconnect access (via) into a common soft matrix with a symmetric arrangement leads to a double‐side universal soft electronic platform that features site‐selective, simultaneous double‐side strain isolation, and vertical interconnection, respectively. Systematic studies of island‐morphology engineering, surface‐strain mapping, and electrical analysis of the platform propose optimized designs. Commensurate with the universal layout, a complete example of double‐side integrated, stretchable 1 MHz binary decoders comprised of 36 logic gates interacting with 9 vias is demonstrated by printing‐based, double‐side electronic functionalization.  相似文献   
96.
As a fine‐grained power gating method for achieving greater power savings, our approach takes advantage of the finite state machine with a datapath (FSMD) characteristic which shows sequential idleness among subcircuits. In an FSMD‐based power gating, while only an active subcircuit is expected to be turned on, more subcircuits should be activated due to the power overhead. To reduce the number of missed opportunities for power savings, we deactivated some of the turned‐on subcircuits by slowing the FSMD down and predicting its behavior. Our microprocessor experiments showed that the power savings are close to the upper bound.  相似文献   
97.
In this paper, we propose a low complexity decoder architecture for low-density parity-check (LDPC) codes using a variable quantization scheme as well as an efficient highly-parallel decoding scheme. In the sum-product algorithm for decoding LDPC codes, the finite precision implementations have an important tradeoff between decoding performance and hardware complexity caused by two dominant area-consuming factors: one is the memory for updated messages storage and the other is the look-up table (LUT) for implementation of the nonlinear function Ψ(x). The proposed variable quantization schemes offer a large reduction in the hardware complexities for LUT and memory. Also, an efficient highly-parallel decoder architecture for quasi-cyclic (QC) LDPC codes can be implemented with the reduced hardware complexity by using the partially block overlapped decoding scheme and the minimized power consumption by reducing the total number of memory accesses for updated messages. For (3, 6) QC LDPC codes, our proposed schemes in implementing the highly-parallel decoder architecture offer a great reduction of implementation area by 33% for memory area and approximately by 28% for the check node unit and variable node unit computation units without significant performance degradation. Also, the memory accesses are reduced by 20%.  相似文献   
98.
Ionic soft actuators, which exhibit large mechanical deformations under low electrical stimuli, are attracting attention in recent years with the advent of soft and wearable electronics. However, a key challenge for making high‐performance ionic soft actuators with large bending deformation and fast actuation speed is to develop a stretchable and flexible electrode having high electrical conductivity and electrochemical capacitance. Here, a functionally antagonistic hybrid electrode with hollow tubular graphene meshes and nitrogen‐doped crumpled graphene is newly reported for superior ionic soft actuators. Three‐dimensional network of hollow tubular graphene mesh provides high electrical conductivity and mechanically resilient functionality on whole electrode domain. On the contrary, nitrogen‐doped wrinkled graphene supplies ultrahigh capacitance and stretchability, which are indispensably required for improving electrochemical activity in ionic soft actuators. Present results show that the functionally antagonistic hybrid electrode greatly enhances the actuation performances of ionic soft actuators, resulting in much larger bending deformation up to 620%, ten times faster rise time and much lower phase delay in a broad range of input frequencies. This outstanding enhancement mostly attributes to exceptional properties and synergistic effects between hollow tubular graphene mesh and nitrogen‐doped crumpled graphene, which have functionally antagonistic roles in charge transfer and charge injection, respectively.  相似文献   
99.
A sampled-grating distributed Bragg reflector laser module having an integrated multiwavelength locker has been developed and evaluated. The uniquely designed wavelength locker made of thermally controlled etalon has provided uniform wavelength monitoring and very stable wavelength locking in the 188-ITU grid channels (37 nm) with 25-GHz spacing. Over the case temperature from -5/spl deg/C to 65/spl deg/C, the laser wavelength was locked within /spl plusmn/0.5 GHz, and the total power consumption of the module was less than 4 W.  相似文献   
100.
This third-generation 1.1-GHz 64-bit UltraSPARC microprocessor provides 1-MB on-chip level-2 cache, 4-Gb/s off chip memory bandwidth, and a new 200 MHz JBus interface that supports one to four processors. The 87.5-million transistor chip is implemented in a seven-layer-metal copper 0.13-/spl mu/m CMOS process and dissipates 53 W at 1.3 V and 1.1 GHz.  相似文献   
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