Effect of preliminary radiation-oxidation treatment on electrophysical properties of zirconium

The effect of preliminary radiation-oxidation treatment on the current density and on the current-voltage characteristic of zirconium is studied. The contribution of the preliminary radiation-oxidation treatment to the change in the electrophysical characteristics is determined in heat and radiation-and-heat tests of zirconium in contact with water.     

Realization of high pressures and temperatures in the gas phase of a bubble liquid flowing through a nozzle

A steady flow of a bubble gas-liquid mixture in a nozzle having a circular cross section has been investigated. The possibility of realization of superhigh temperatures and pressures in the gas phase of the mixture in the region near the smallest cross section of the nozzle has been analyzed. The influence of the initial radius of the flow and the volume content of bubbles, determining the volumetric rate of flow of the liquid supplied to the nozzle, on the pattern of the flow has been considered. __________ Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 80, No. 6, pp. 134–137, November–December, 2007.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

Fabrication of GaAs quantum wire structure using metal organic molecular beam epitaxy

GaAs quantum wires (100*20 nm/sup 2/) buried in AlAs layers have been successfully fabricated using metal organic molecular beam epitaxy (MOMBE) for the first time. The underlying growth mechanism is that, under appropriate As/sub 4/ pressure in MOMBE, GaAs preferentially grows only on the sidewalls of the patterned     

Removing cesium radionuclides from sodium-potassium coolant

Translated from Atomnaya Énergiya, Vol. 66, No. 1., pp. 22–24, January, 1989.