集电极偏置电流对硅npn晶体管γ辐照效应的影响

对硅npn双极晶体管(C2060)室温下不同集电极偏置电流条件下γ辐照的总剂量效应进行了研究.结果表明,npn晶体管的辐照损伤程度随着辐照总剂量的增加而增加;尤其是实验中发现:在相同的辐照总剂量下随着辐照时集电极偏置电流的增加,晶体管的辐照损伤程度却在减轻.空间电荷模型的观点并不能很好地解释辐照损伤与辐照集电极偏置电流的关系.文章对空间电荷模型进行了修正,认为除氧化物俘获电荷和界面俘获电荷外,还会在外基区Si-SiO2界面附近形成电中性的电偶极子.利用修正后的理论可以很好地解释所有的实验结果.     

热模拟实验研究现状及值得关注的几个问题

系统梳理了热模拟实验研究现状,提出了3个值得关注的问题以及5个重要的发展方向。按照体系封闭性分类是目前最为广泛使用的一类热模拟实验分类方案。不同的热模拟实验体系各具特点,可以根据不同的实验目的来选取合适的热模拟实验体系。封闭实验体系更加适合于腐殖型烃源岩的热模拟实验,开放体系的在线分析产物在研究易挥发组分时具有独特的优势,半开放体系是最为接近实际地质体中烃源岩热演化的热模拟体系。热模拟实验中3个值得关注的问题：一是水对热模拟实验的影响;二是热模拟实验中是否可以得出费托合成以外的有说服力的烷烃气碳同位素倒转;三是在进行热模拟实验研究生烃动力学时一定要结合实际地质背景建立模型。热模拟实验5个重要的发展方向：一是有水参与的相对低温长时间的热模拟实验研究;二是与非常规油气形成相关热模拟实验研究;三是热模拟实验中烃源岩孔隙微裂缝发育以及流体排出相互耦合关系相关的研究;四是碳酸盐岩烃源岩相关热模拟实验研究;五是与异常压力相关的热模拟实验研究。     

煤层气工作流体储层伤害评价方法的适宜性研究

目前,被普遍接受的煤层气工作流体储层伤害评价指标是渗透率变化值,其常用的渗透率测试方法多达6种,尚未见到采用实际测量方法对比研究6种测试方法适用性的成果报道。为此,在实验室内采用恒压法、恒流量法、岩屑脉冲衰减法、柱塞脉冲衰减法、压力振荡法和核磁共振法等6种方法,随机选取3组沁水盆地15号煤平行样品,对其在钻井液和压裂液伤害前后的渗透率进行测定,计算储层伤害前后的渗透率平均值和绝对储层伤害、相对储层伤害数据,进而采用简单排序法、一阶减元等序统计算法和测试原理分析法处理分析上述数据,通过绝对储层伤害和相对储层伤害排位的稳定性筛选适用的测试方法。研究结果表明:(1)恒压法和恒流量法实测的绝对储层伤害结果偏大,岩屑脉冲衰减法、柱塞脉冲衰减法和压力振荡法实测的结果偏小,核磁共振法实测的结果居中;(2) 6种方法实测的相对储层伤害分布无明显规律;(3)在煤层气储层伤害评价时,渗透率测试方法优先选择顺序为:岩屑脉冲衰减法恒流量法核磁共振法柱塞脉冲衰减法=压力振荡法=恒压法,这是由各种方法的测试机理所决定的。结论认为:(1)岩屑脉冲衰减法最适合用于测试煤层气储层基质的伤害程度,恒流量法最适合测量整体的伤害程度;(2)煤层气工作流体储层渗透率伤害程度室内评价适宜并行使用岩屑脉冲衰减法和恒流量法。     

手征等离子体波导导波控制特性的研究

应用纵向分量法推导出了完全填充手征等离子体金属圆波导的色散方程。通过数值求解完全填充手征等离子体金属圆波导的色散方程,得出了在不同条件下的几个低阶模的模式色散图。由此分析讨论了手征等离子体金属圆波导的基本传播特性并着重分析了手征导纳和外偏置磁场对完全填充手征等离子体金属圆波导的导波特性的影响并获得了有意义的结果。     

新型廉价CO2激光热处理涂料的研究

报道了一种新型廉价CO2激光热处理涂料,通过对涂料的红外吸收谱、粘合剂种类对涂料红外吸收谱的影响及激光热处理区在处理前后化学成分变化的实验研究,得到了一些有用的结论,经过实际的激光热处理加工应用,证明这种涂料具有吸收率高、价格低廉、无毒、无害、无污染、易清除等优点,完全可以满足激光热处理加工的需要.     

A Soft Resistive Acoustic Sensor Based on Suspended Standing Nanowire Membranes with Point Crack Design

An artificial basilar membrane (ABM) is an acoustic transducer that mimics the mechanical frequency selectivity of the real basilar membrane, which has the potential to revolutionize current cochlear implant technology. While such ABMs can be potentially realized using piezoelectric, triboelectric, and capacitive transduction methods, it remains notoriously difficult to achieve resistive ABM due to the poor frequency discrimination of resistive‐type materials. Here, a point crack technology on noncracking vertically aligned gold nanowire (V‐AuNW) films is reported, which allows for designing soft acoustic sensors with electric signals in good agreement with vibrometer output—a capability not achieved with corresponding bulk cracking system. The strategy can lead to soft microphones for music recognition comparable to the conventional microphone. Moreover, a soft resistive ABM is demonstrated by integrating eight nanowire‐based sensor strips on a soft trapezoid frame. The wearable ABM exhibits high‐frequency selectivity in the range of 319–1951 Hz and high sensitivity of 0.48–4.26 Pa^?1. The simple yet efficient fabrication in conjunction with programmable crack design indicates the promise of the methodology for a wide range of applications in future wearable voice recognition devices, cochlea implants, and human–machine interfaces.     

Face anti-spoofing based on multi-modal and multi-scale features fusion

Face anti-spoofing is used to assist face recognition system to judge whether the detected face is real face or fake face. In the traditional face anti-spoofing methods, features extracted by hand are used to describe the difference between living face and fraudulent face. But these handmade features do not apply to different variations in an unconstrained environment. The convolutional neural network (CNN) for face deceptions achieves considerable results. However, most existing neural network-based methods simply use neural networks to extract single-scale features from single-modal data, while ignoring multi-scale and multi-modal information. To address this problem, a novel face anti-spoofing method based on multi-modal and multi-scale features fusion ( MMFF) is proposed. Specifically, first residual network ( Resnet )-34 is adopted to extract features of different scales from each modality, then these features of different scales are fused by feature pyramid network (FPN), finally squeeze-and-excitation fusion ( SEF) module and self-attention network ( SAN) are combined to fuse features from different modalities for classification. Experiments on the CASIA-SURF dataset show that the new method based on MMFF achieves better performance compared with most existing methods.     

全光纤对接损耗调Q激光器

激光器调Q技术是产生高峰值功率、窄脉冲的最有效方法之一。提出并初步验证了全光纤对接损耗调Q方法,分析了调Q原理以及影响因素,实现调Q脉冲的输出。激光腔内加入两段光纤,两段光纤间相互靠近的一端紧密对接,其中一段粘结在压电陶瓷(PZT)上。通过外部电压变化驱动压电陶瓷,使两光纤端面间出现轴向间隙、径向错位或旋转夹角,改变两段光纤之间的耦合连接损耗,进而调节激光腔的损耗,输出调Q脉冲。采用径向错位方式,可以有效改变光纤之间的耦合连接损耗,重复频率可达10 kHz。该方法实现简单,成本低廉,通过外部条件控制,可进一步提高输出脉冲的稳定性。     

基于激光散射的高速微粒测速系统

高速微粒速度测量技术是空间高速粒子地基模拟系统中的一项关键技术。设计并实现了一种利用激光光幕对高速运动微粒的非接触式速度测量系统,分析了测量误差以及进一步提高测量精度的方法。该系统以高功率半导体激光器作为光源,同时采用PIN光电二极管作为光电探测器,利用接收侧向散射光脉冲作为起始和结束信号以测量微粒的平均速度。实验结果表明,该系统可对速度范围为1~10 km/s,直径大于100μm的高速微粒进行测速,精度优于1.8%。     

Investigation on interracial and electrical properties of Ge MOS capacitor with different NH3-plasma treatment procedure

The effects of different NH3-plasma treatment procedures on interracial and electrical properties of Ge MOS capacitors with stacked gate dielectric of HfTiON/TaON were investigated.The NH3-plasma treatment was performed at different steps during fabrication of the stacked gate dielectric,i.e.before or after interlayer (TaON)deposition,or after deposition ofhigh-k dielectric (HfTiON).It was found that the excellent interface quality with an interface-state density of 4.79 × 1011 eV-1cm-2 and low gate leakage current (3.43 × 10-5 A/cm2 at Vg =1 V) could be achieved for the sample with NH3-plasma treatment directly on the Ge surface before TaON deposition.The involved mechanisms are attributed to the fact that the NH3-plasma can directly react with the Ge surface to form more Ge-N bonds,i.e.more GeOxNy,which effectively blocks the inter-diffusion of elements and suppresses the formation of unstable GeOx interfacial layer,and also passivates oxygen vacancies and dangling bonds near/at the interface due to more N incorporation and decomposed H atoms from the NH3-plasma.