Energy-efficient,EDFA lifetime-aware network planning along with virtualized elastic regenerator placement for IP-over-EON

Photonic Network Communications - In this paper, we focus on energy-efficient network planning (including traffic provisioning) along with optimal placement of virtualized elastic regenerators...     

Intercarrier bandwidth exchange: an engineering framework

A mismatch between demand and supply for bandwidth is common in transport carrier networks. This mismatch is generally a result of the disparity between a carrier's capacity buildout and its anticipated customer demand. A carrier with temporary bandwidth deficit or lack of presence in a geographical region and a carrier with surplus capacity in the right locations can be brought together by the emerging bandwidth exchange technology. Bandwidth exchange offers a win-win solution, in which the carrier with a deficit avoids losing revenue by buying capacity from the carrier with surplus, and the latter makes additional revenue by retail sale of its excess capacity. While the concept of real-time purchase and exchange of bandwidth has attracted a lot of attention, many technical challenges stand in the way of making it a reality. The purpose of this article is to provide an engineering framework for enabling real-time bandwidth exchange with committed quality of service and service level agreement among transport carriers. Special emphasis is given to identifying the architectural requirements and the enabling infrastructure necessary for building a viable bandwidth exchange that can be used for creating revenue out of surplus stranded capacity. Indepth analysis of cross-carrier service level agreement specification, capacity publication, route design, and service provisioning are also provided in the article.     

Direct Transfer Printing with Metal Oxide Layers for Fabricating Flexible Nanowire Devices

A direct printing method for fabricating devices by using metal oxide transfer layers instead of conventional transfer media such as polydimethylsiloxane is presented. Metal oxides are not damaged by organic solvents; therefore, electrodes with gaps less than 2 μm can be defined on a metal oxide transfer layer through photolithography. In order to determine a suitable metal oxide for use as transfer layer, the surface energies of various metal oxides are measured, and Au layers deposited on these oxides are transferred onto polyvinylphenol (PVP). To verify the feasibility of our approach, Au source–drain electrodes on transfer layers and Si nanowires (NWs) addressed by the dielectrophoretic (DEP) alignment process are transferred onto rigid and flexible PVP‐coated substrates. Based on transfer test and DEP process, Al₂O₃ is determined to be the best transfer layer. Finally, Si NWs field effect transistors (FETs) are fabricated on a rigid Si substrate and a flexible polyimide film. As the channel length decreases from 3.442 to 1.767 μm, the mobility of FET on the Si substrate increases from 127.61 ± 37.64 to 181.60 ± 23.73 cm² V^?1 s^?1. Furthermore, the flexible Si NWs FETs fabricated through this process show enhanced electrical properties with an increasing number of bending cycles.     

Glyphosate Adsorption from Water Using Hierarchically Porous Metal–Organic Frameworks

The selective removal of one ligand in mixed-ligand MOFs upon thermolysis provides a powerful strategy to introduce additional mesopores without affecting the overall MOF structure. By varying the initial ligand ratio, MOFs of the MIL-125-Ti family with two distinct hierarchical pore architectures are synthesized, resembling either large cavities or branching fractures. The performance of the resulting hierarchically porous MOFs is evaluated toward the adsorptive removal of glyphosate (N-(phosphonomethyl)glycine) from water, and the adsorption kinetics and mechanism are examined. Due to their strong affinity for phosphoric groups, the numerous Ti–OH groups resulting from the selective ligand removal act as natural anchor points for effective glyphosate uptake. The relationships between contact duration, glyphosate concentration, and adsorbent dosage are investigated, and the impact of these parameters on the effectiveness of glyphosate removal from contaminated water samples is examined. The introduction of additional mesopores has increased the adsorption capacities by nearly 3 times with record values exceeding 440.9 mg g⁻¹, which ranks these MOFs among the best-reported adsorbents.     

Slot antennas on photonic band gap crystals

The radiation patterns of a slot antenna placed on a photonic band gap crystal have been measured. We used a layer-by-layer photonic band gap crystal having a three-dimensional stop band between 12 and 15 GHz. The slot antenna radiation depends sensitively on the relative position and orientation of the slot in the surface unit cell of the photonic crystal. We have found configurations of the slot antenna with an increase of radiated power by 2-3 dB. The photonic band gap crystal can considerably improve the performance of a simple slot antenna     

Cubic–Quartic Optical Solitons with Differential Group Delay for Kudryashov’s Model by Extended Trial Function

Journal of Communications Technology and Electronics - This paper implements mathematically rigorous extended trial function algorithm to address cubic–quartic optical solitons in...     

Moving average filter for spur reduction in subsampling fractional PLLs

A mono-bit digital receiver circuit for instantaneous frequency measurement is presented. The circuit is co-designed with Indium Phosphide Double Heterojunction Bipolar Transistor and complementary metal oxide semiconductor (CMOS) devices. The chip is fabricated by InP/CMOS three-dimensional (3D) heterogeneous integration using the wafer-level bonding technique. The measurable signal frequency within?+?15 to???25 dBm power is up to 7.5 GHz with a 14-GHz clock. Compared to an integrated circuit (IC) with a traditional InP or CMOS technologies, the proposed chip could benefit from both InP and CMOS technology. In the heterogeneous integration, InP devices provide high operating frequency, broad signal bandwidth, and large input signal dynamic range, while CMOS devices achieve complex function with low power consumption. In this way, the system FoM is improved for a mono-bit digital receiver while the system power consumption is kept the same. This work also shows the great potential of the 3D heterogeneous integration for the high-performance mixed-signal and multifunction radio-frequency ICs.

     

An automated patient monitoring using discrete‐time wireless sensor networks

In recent years, Internet of Things (IoT) devices are used for remote health monitoring. For remotely monitoring a patient, only the health information at different time points are not sufficient; predicted values of biomarkers (for some future time points) are also important. In this article, we propose a powerful statistical model for an efficient dynamic patient monitoring using wireless sensor nodes through Bayesian Learning (BL). We consider the setting where a set of correlated biomarkers are measured from a patient through wireless sensors, but the sensors only report the ordinal outcomes (say, good, fair, high, or very high) to the sink based on some prefixed thresholds. The challenge is to use the ordinal outcomes for monitoring and predicting the health status of the patient under consideration. We propose a linear mixed model where interbiomarker correlations and intrabiomarker dependence are modeled simultaneously. The estimated and the predicted values of the biomarkers are transferred over the internet so that health care providers and the family members of the patient can remotely monitor the patient. Extensive simulation studies are performed to assess practical usefulness of our proposed joint model, and the performance of the proposed joint model is compared to that of some other traditional models used in the literature.     

Manifold Preserving Features and Regression for Semantic Labelling in High Dimensional Images

Wireless Personal Communications - This paper proposes an combined method for manifold preservation and Subspace Eigenvectors(SE) based regression in high dimensional (HD) images. We studied...     

Transconductance and mobility of Si:B delta MOSFETs

Delta-doped MOSFETs have been fabricated in MBE-grown silicon using for the first time boron as the dopant within the delta layer. Current-voltage characteristics have been measured, and secondary ion mass spectrometry (SIMS) is used to confirm the location of the delta layer and the extent of layer broadening by diffusion during processing. Precise threshold voltages of the devices are difficult to determine since the devices (which all operate in depletion mode) take several volts to switch off. Transconductances of the devices have been measured, and it is shown how analysis of these results can yield estimates of the carrier mobility for transport along the delta layers despite the uncertainty in the threshold voltage. A clear transition is observed in the results which is attributed to the formation of a parasitic surface-channel field-effect transistor, providing conclusive evidence that the devices are conducting along a delta channel for part of the measured range of applied gate biases